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quality P channel MOSFET HUASHUO HSBB3115 featuring low gate charge and trench technology for power supplies factory
quality P channel MOSFET HUASHUO HSBB3115 featuring low gate charge and trench technology for power supplies factory

P channel MOSFET HUASHUO HSBB3115 featuring low gate charge and trench technology for power supplies

Key Attributes
Model Number: HSBB3115
Product Custom Attributes
Drain To Source Voltage:
30V
Current - Continuous Drain(Id):
55A
Operating Temperature -:
-55℃~+150℃
RDS(on):
-
Gate Threshold Voltage (Vgs(th)):
1.2V
Reverse Transfer Capacitance (Crss@Vds):
421pF@15V
Number:
1 P-Channel
Input Capacitance(Ciss):
3.448nF@15V
Pd - Power Dissipation:
38W
Gate Charge(Qg):
30nC@4.5V
Mfr. Part #:
HSBB3115
Package:
PRPAK3x3-8L
Product Description

Product Overview

The HSBB3115 is a P-channel MOSFET featuring high cell density and trench technology, designed to offer excellent RDS(ON) and gate charge for synchronous buck converter applications. This device meets RoHS and Green Product requirements and is 100% EAS guaranteed with full function reliability approval. It provides excellent CdV/dt effect decline and is available as a Green Device.

Product Attributes

  • Brand: HS-Semi
  • Certifications: RoHS, Green Product
  • Reliability: 100% EAS Guaranteed
  • Technology: Advanced high cell density Trench technology

Technical Specifications

Symbol Parameter Conditions Min. Typ. Max. Unit
VDS Drain-Source Voltage -30 V
VGS Gate-Source Voltage 20 V
ID@TC=25 Continuous Drain Current, VGS @ -10V -55 A
ID@TC=100 Continuous Drain Current, VGS @ -10V -32 A
IDM Pulsed Drain Current -200 A
EAS Single Pulse Avalanche Energy 125 mJ
IAS Avalanche Current -50 A
PD@TC=25 Total Power Dissipation 38 W
TSTG Storage Temperature Range -55 150
TJ Operating Junction Temperature Range -55 150
RJA Thermal Resistance Junction-Ambient --- 65 /W
RJC Thermal Resistance Junction-Case --- 2.3 /W
BVDSS Drain-Source Breakdown Voltage VGS=0V , ID=-250uA -30 --- --- V
RDS(ON),typ Static Drain-Source On-Resistance VGS=-10V , ID=-16A 7.3 8.7 m
RDS(ON),typ Static Drain-Source On-Resistance VGS=-4.5V , ID=-10A 11 13.5 m
VGS(th) Gate Threshold Voltage VGS=VDS , ID =-250uA -1.2 --- -2.5 V
IDSS Drain-Source Leakage Current VDS=-24V , VGS=0V , TJ=25 --- -1 uA
IDSS Drain-Source Leakage Current VDS=-24V , VGS=0V , TJ=55 --- -5 uA
IGSS Gate-Source Leakage Current VGS=20V , VDS=0V --- 100 nA
gfs Forward Transconductance VDS=-5V , ID=-16A 45 --- S
Qg Total Gate Charge (-4.5V) VDS=-15V , VGS=-4.5V , ID=-15A 30 --- nC
Qgs Gate-Source Charge 10 --- nC
Qgd Gate-Drain Charge 10.4 --- nC
Td(on) Turn-On Delay Time VDD=-15V , VGS=-10V , RG=3.3 ID=-15A 9.4 --- ns
Tr Rise Time 10.2 --- ns
Td(off) Turn-Off Delay Time 117 --- ns
Tf Fall Time 24 --- ns
Ciss Input Capacitance VDS=-15V , VGS=0V , f=1MHz 3448 --- pF
Coss Output Capacitance 508 --- pF
Crss Reverse Transfer Capacitance 421 --- pF
IS Continuous Source Current VG=VD=0V , Force Current --- -50 A
VSD Diode Forward Voltage VGS=0V , IS=-1A , TJ=25 --- -1 V

Note: 1. The data tested by surface mounted on a 1 inch FR-4 board with 2OZ copper. 2. The data tested by pulsed, pulse width 300s, duty cycle 2%. 3. The EAS data shows Max. rating. The test condition is VDD=-25V, VGS=-10V, L=0.1mH, IAS=-50A. 4. The power dissipation is limited by 150 junction temperature. 5. The data is theoretically the same as ID, in real applications, should be limited by total power dissipation.

Ordering Information:

Part Number Package Code Packaging
HSBB3115 PRPAK3*3 3000/Tape&Reel

2410121503_HUASHUO-HSBB3115_C701040.pdf

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