Durable N Channel Enhancement Mode MOSFET HUAYI HY3503C2 for Power Management and Switching Circuits
Key Attributes
Model Number:
HY3503C2
Product Custom Attributes
Drain To Source Voltage:
30V
Current - Continuous Drain(Id):
150A
Operating Temperature -:
-55℃~+150℃
RDS(on):
2.5mΩ@10V
Gate Threshold Voltage (Vgs(th)):
3V@250uA
Type:
N-Channel
Reverse Transfer Capacitance (Crss@Vds):
153pF
Number:
1 N-channel
Output Capacitance(Coss):
541pF
Input Capacitance(Ciss):
4.9nF
Pd - Power Dissipation:
156W
Gate Charge(Qg):
100nC@10V
Mfr. Part #:
HY3503C2
Package:
PPAK-8L(5x6)
Product Description
HY3503C2 Single N-Channel Enhancement Mode MOSFET
The HY3503C2 is a high-performance N-Channel Enhancement Mode MOSFET designed for various switching applications. It offers a low on-state resistance (RDS(ON)) of 2.0m at VGS = 10V and 2.7m at VGS = 4.5V, making it efficient for power management. This device is 100% avalanche tested, ensuring reliability and ruggedness. Halogen-free options are available. Key applications include switching circuits, power management for DC/DC converters, and battery protection.
Product Attributes
- Brand: HY (Huayi)
- Package: PPAK5*6-8L
- Material: Halogen-Free Devices Available
- Certifications: RoHS Compliant, IPC/JEDEC J-STD-020 compliant for MSL classification
Technical Specifications
| Parameter | Test Conditions | Min | Typ. | Max | Unit |
|---|---|---|---|---|---|
| Absolute Maximum Ratings | |||||
| Drain-Source Voltage (VDSS) | 30 | V | |||
| Gate-Source Voltage (VGSS) | 20 | V | |||
| Maximum Junction Temperature (TJ) | 150 | C | |||
| Storage Temperature Range (TSTG) | -55 | 150 | C | ||
| Source Current-Continuous (IS) | Tc=25C, Mounted on Large Heat Sink | 150 | A | ||
| Pulsed Drain Current (IDM) | Tc=25C | 540 | A | ||
| Continuous Drain Current (ID) | Tc=25C | 150 | A | ||
| Continuous Drain Current (ID) | Tc=100C | 94 | A | ||
| Maximum Power Dissipation (PD) | Tc=25C | 156 | W | ||
| Maximum Power Dissipation (PD) | Tc=100C | 62.5 | W | ||
| Thermal Resistance, Junction-to-Case (RTJC) | 0.8 | C/W | |||
| Thermal Resistance, Junction-to-Ambient (RTJA) | Surface mounted on FR-4 board | 40 | C/W | ||
| Single Pulsed Avalanche Energy (EAS) | L=0.1mH | 378.5 | mJ | ||
| Electrical Characteristics | |||||
| Drain-Source Breakdown Voltage (BVDSS) | VGS=0V, IDS=250A | 30 | - | - | V |
| Drain-to-Source Leakage Current (IDSS) | VDS=30V, VGS=0V | - | - | 1 | A |
| Drain-to-Source Leakage Current (IDSS) | TJ=125C | - | - | 50 | A |
| Gate Threshold Voltage (VGS(th)) | VDS=VGS, IDS=250A | 1 | 2 | 3 | V |
| Gate-Source Leakage Current (IGSS) | VGS=20V, VDS=0V | - | - | 100 | nA |
| Drain-Source On-State Resistance (RDS(ON)) | VGS=10V, IDS=20A | - | 2.0 | 2.5 | m |
| Drain-Source On-State Resistance (RDS(ON)) | VGS=4.5V, IDS=20A | - | 2.7 | 3.4 | m |
| Diode Forward Voltage (VSD) | ISD=20A, VGS=0V | - | 0.8 | 1.0 | V |
| Reverse Recovery Time (trr) | ISD=20A, dISD/dt=100A/s | - | 28 | - | ns |
| Reverse Recovery Charge (Qrr) | - | 71 | - | nC | |
| Gate Resistance (RG) | VGS=0V, VDS=0V, F=1 MHz | - | 0.55 | - | |
| Input Capacitance (Ciss) | VGS=0V, VDS=25V, Frequency=1.0MHz | - | 4900 | - | pF |
| Output Capacitance (Coss) | - | 541 | - | pF | |
| Reverse Transfer Capacitance (Crss) | - | 153 | - | pF | |
| Turn-on Delay Time (td(ON)) | VDD=15V, RG=3.3, IDS=20A, VGS=10V | - | 25 | - | ns |
| Turn-on Rise Time (Tr) | - | 90 | - | ns | |
| Turn-off Delay Time (td(OFF)) | - | 50 | - | ns | |
| Turn-off Fall Time (Tf) | - | 40 | - | ns | |
| Total Gate Charge (Qg) | VDS =24V, VGS=10V, ID=20A | - | 100 | - | nC |
| Gate-Source Charge (Qgs) | - | 14 | - | - | |
| Gate-Drain Charge (Qgd) | - | 28 | - | - | |
2411192352_HUAYI-HY3503C2_C358124.pdf
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