Power MOSFET HUAYI HY0910D with N Channel Design and Halogen Free Green Device Certification
Key Attributes
Model Number:
HY0910D
Product Custom Attributes
Drain To Source Voltage:
100V
Current - Continuous Drain(Id):
9A
Operating Temperature -:
-55℃~+150℃
RDS(on):
169mΩ@4.5V
Gate Threshold Voltage (Vgs(th)):
3V@250uA
Type:
N-Channel
Reverse Transfer Capacitance (Crss@Vds):
29pF
Number:
1 N-channel
Output Capacitance(Coss):
52pF
Input Capacitance(Ciss):
720pF
Pd - Power Dissipation:
21W
Gate Charge(Qg):
11nC@10V
Mfr. Part #:
HY0910D
Package:
TO-252-2
Product Description
Product Overview
The HY-D89 is a N-Channel MOSFET designed for power management in inverter systems. It features avalanche tested, reliable, and rugged performance, with Halogen-Free and Green Devices available. RoHS compliant applications are supported.
Product Attributes
- Brand: HY (Huayi Microelectronics)
- Origin: China
- Certifications: RoHS Compliant, Halogen Free, Green Devices Available
Technical Specifications
| Model | Package Code | VDS (V) | VGS (V) | ID (A) | RDS(ON) (m) | PD (W) | Package Type |
| HY-D89 | TO-252-2L | 80 | 20 | 12 | 15 (Typ) @ VGS=10V | 1.56 (TC=25C) | TO-252-2L |
| HY-D89 | TO-251-3L | 80 | 20 | 12 | 15 (Typ) @ VGS=10V | 1.56 (TC=25C) | TO-251-3L |
| HY-D89 | TO-251-3S | 80 | 20 | 12 | 15 (Typ) @ VGS=10V | 1.56 (TC=25C) | TO-251-3S |
2411220047_HUAYI-HY0910D_C357993.pdf
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