Trench technology MOSFET HUASHUO HSK02N20 designed for fast switching and loss in power applications
Key Attributes
Model Number:
HSK02N20
Product Custom Attributes
Drain To Source Voltage:
200V
Current - Continuous Drain(Id):
2A
Operating Temperature -:
-55℃~+150℃
RDS(on):
1.1Ω@4.5V
Gate Threshold Voltage (Vgs(th)):
3V@250uA
Type:
N-Channel
Reverse Transfer Capacitance (Crss@Vds):
4.5pF@25V
Number:
1 N-channel
Input Capacitance(Ciss):
900pF@25V
Pd - Power Dissipation:
1.25W
Gate Charge(Qg):
15nC@10V
Mfr. Part #:
HSK02N20
Package:
SOT-89
Product Description
Product Overview
The HSK02N20 is a high cell density trenched N-channel MOSFET designed for fast switching applications. It offers excellent RDS(ON) and efficiency, making it suitable for most small power switching and load switch applications. This MOSFET meets RoHS and Green Product requirements and is available as a green device. Key advantages include super low gate charge and excellent Cdv/dt effect decline, enabled by advanced high cell density trench technology.
Product Attributes
- Brand: HS-Semi
- Product Type: N-Channel MOSFET
- Switching Speed: Fast Switching
- Technology: Advanced high cell density Trench technology
- Certifications: RoHS, Green Product
- Availability: Green Device Available
Technical Specifications
| Symbol | Parameter | Conditions | Min. | Typ. | Max. | Unit |
|---|---|---|---|---|---|---|
| Absolute Maximum Ratings | ||||||
| VDS | Drain-Source Voltage | 200 | V | |||
| VGS | Gate-Source Voltage | ±20 | V | |||
| ID@TA=25 | Continuous Drain Current, VGS @ 10V1 | 2.0 | A | |||
| ID@TA=70 | Continuous Drain Current, VGS @ 10V1 | 1.3 | A | |||
| IDM | Pulsed Drain Current2 | 8 | A | |||
| PD@TA=25 | Total Power Dissipation3 | 1.25 | W | |||
| TSTG | Storage Temperature Range | -55 | 150 | |||
| TJ | Operating Junction Temperature Range | -55 | 150 | |||
| Thermal Data | ||||||
| RJA | Thermal Resistance Junction-ambient1 | --- | 85 | /W | ||
| RJC | Thermal Resistance Junction-Case1 | --- | 24 | /W | ||
| Electrical Characteristics (TJ=25 , unless otherwise noted) | ||||||
| BVDSS | Drain-Source Breakdown Voltage | VGS=0V , ID=250uA | 200 | --- | --- | V |
| RDS(ON) | Static Drain-Source On-Resistance2 | VGS=10V , ID=1A | 0.6 | 1.0 | Ω | |
| VGS=4.5V , ID=1A | 0.7 | 1.1 | Ω | |||
| VGS(th) | Gate Threshold Voltage | VGS=VDS , ID =250uA | 1.2 | 2 | 3 | V |
| IDSS | Drain-Source Leakage Current | VDS=200V , VGS=0V , TJ=25 | --- | 1 | µA | |
| VDS=200V , VGS=0V , TJ=55 | --- | 5 | µA | |||
| IGSS | Gate-Source Leakage Current | VGS=±20V , VDS=0V | --- | ±100 | nA | |
| gfs | Forward Transconductance | VDS=10V , ID=1A | 10 | --- | S | |
| Qg | Total Gate Charge (10V) | VDS=160V , VGS=10V , ID=1A | 15 | --- | nC | |
| Qgs | Gate-Source Charge | 2.9 | --- | |||
| Qgd | Gate-Drain Charge | 5 | --- | |||
| td(on) | Turn-On Delay Time | VDD=100V , VGS=10V , RG=3Ω ID=1A | 22 | --- | ns | |
| tr | Rise Time | 30 | --- | ns | ||
| td(off) | Turn-Off Delay Time | 44 | --- | ns | ||
| tf | Fall Time | 12 | --- | ns | ||
| Ciss | Input Capacitance | VDS=25V , VGS=0V , f=1MHz | 900 | --- | pF | |
| Coss | Output Capacitance | 125 | --- | pF | ||
| Crss | Reverse Transfer Capacitance | 4.5 | --- | pF | ||
| Diode Characteristics | ||||||
| IS | Continuous Source Current1,4 | VG=VD=0V , Force Current | --- | 2 | A | |
| VSD | Diode Forward Voltage2 | VGS=0V , IS=1A , TJ=25 | --- | 1 | V | |
| trr | Reverse Recovery Time | IF=1A , dI/dt=100A/µs , TJ=25 | 85 | --- | ns | |
| Qrr | Reverse Recovery Charge | 250 | --- | nC | ||
Notes:
1. The data tested by surface mounted on a 1 inch² FR-4 board with 2OZ copper.
2. The data tested by pulsed, pulse width ≤300µs, duty cycle ≤2%.
3. The power dissipation is limited by 150 junction temperature.
4. The data is theoretically the same as ID and IDM, in real applications, should be limited by total power dissipation.
Ordering Information
| Part Number | Package Code | Packaging |
|---|---|---|
| HSK02N20 | SOT-89 | 1000/Tape&Reel |
2410122026_HUASHUO-HSK02N20_C22359222.pdf
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