N Channel MOSFET HUASHUO HSU5N25 Featuring Trench Technology and RoHS Certification for Power Conversion
Key Attributes
Model Number:
HSU5N25
Product Custom Attributes
Drain To Source Voltage:
250V
Current - Continuous Drain(Id):
5A
RDS(on):
1.2Ω@10V
Operating Temperature -:
-55℃~+150℃
Gate Threshold Voltage (Vgs(th)):
3V@250uA
Type:
N-Channel
Reverse Transfer Capacitance (Crss@Vds):
8pF@100V
Number:
1 N-channel
Output Capacitance(Coss):
670pF
Input Capacitance(Ciss):
670pF@100V
Pd - Power Dissipation:
2.7W
Gate Charge(Qg):
12.5nC@10V
Mfr. Part #:
HSU5N25
Package:
TO-252
Product Description
Product Overview
The HSU5N25 is a high-performance N-channel Fast Switching MOSFET designed for synchronous buck converter applications. Featuring extreme high cell density, it offers excellent RDS(ON) and gate charge characteristics. This MOSFET meets RoHS and Green Product requirements, is 100% EAS guaranteed, and has full function reliability approval. Key advantages include super low gate charge, excellent Cdv/dt effect decline, and advanced high cell density Trench technology.
Product Attributes
- Brand: HS-Semi
- Product Type: N-Channel MOSFET
- Technology: Trench
- Certifications: RoHS, Green Product
- Reliability: 100% EAS guaranteed, full function reliability approved
Technical Specifications
| Model | Parameter | Conditions | Min. | Typ. | Max. | Units |
|---|---|---|---|---|---|---|
| HSU5N25 | Drain-Source Voltage (VDS) | 200 | V | |||
| Gate-Source Voltage (VGS) | 20 | V | ||||
| Continuous Drain Current (ID@TC=25) | VGS @ 10V | 5 | A | |||
| Continuous Drain Current (ID@TC=100) | VGS @ 10V | 3 | A | |||
| Pulsed Drain Current (IDM) | 16 | A | ||||
| Single Pulse Avalanche Energy (EAS) | 16 | mJ | ||||
| Total Power Dissipation (PD@TA=25) | 2.7 | W | ||||
| Storage Temperature Range (TSTG) | -55 | 150 | ||||
| Operating Junction Temperature Range (TJ) | -55 | 150 | ||||
| Thermal Resistance Junction-ambient (RJA) | 70 | /W | ||||
| Thermal Resistance Junction-Case (RJC) | 4 | /W | ||||
| Drain-Source Breakdown Voltage (BVDSS) | VGS=0V, ID=250uA | 250 | V | |||
| Static Drain-Source On-Resistance (RDS(ON),max) | VGS=10V, ID=5A | 1.2 | ||||
| Gate Threshold Voltage (VGS(th)) | VGS=VDS, ID=250uA | 1 | 1.8 | 3 | V | |
| Drain-Source Leakage Current (IDSS) | VDS=250V, VGS=0V, TJ=25 | 1 | uA | |||
| Drain-Source Leakage Current (IDSS) | VDS=250V, VGS=0V, TJ=125 | 100 | uA | |||
| Gate-Source Leakage Current (IGSS) | VGS=20V, VDS=0V | 100 | nA | |||
| Forward Transconductance (gfs) | VDS=10V, ID=1A | 7.9 | S | |||
| Gate Resistance (Rg) | VDS=0V, VGS=0V, f=1MHz | 1.8 | ||||
| Total Gate Charge (Qg) | VDS=100V, VGS=10V, ID=1A | 12.5 | nC | |||
| Gate-Source Charge (Qgs) | 2 | nC | ||||
| Gate-Drain Charge (Qgd) | 2.5 | nC | ||||
| Turn-On Delay Time (Td(on)) | VDD=100V, VGS=10V, RG=6, ID=1A | 13 | ns | |||
| Rise Time (Tr) | 9 | ns | ||||
| Turn-Off Delay Time (Td(off)) | 38 | ns | ||||
| Fall Time (Tf) | 8 | ns | ||||
| Input Capacitance (Ciss) | VDS=100V, VGS=0V, f=1MHz | 670 | p | F | ||
| Output Capacitance (Coss) | 14 | p | F | |||
| Reverse Transfer Capacitance (Crss) | 8 | p | F | |||
| Continuous Source Current (IS) | VG=VD=0V, Force Current | 5 | A | |||
| Pulsed Source Current (ISM) | 16 | A | ||||
| Diode Forward Voltage (VSD) | VGS=0V, IS=1A, TJ=25 | 1.2 | V | |||
| Reverse Recovery Time (trr) | IF=1A, dI/dt=100A/s, TJ=25 | 75 | nS | |||
| Reverse Recovery Charge (Qrr) | 270 | nC |
2410122016_HUASHUO-HSU5N25_C22359255.pdf
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