20V dual P channel MOSFET HUASHUO HSSK8811 featuring trench technology and fast switching for load switch circuits
Key Attributes
Model Number:
HSSK8811
Product Custom Attributes
Drain To Source Voltage:
20V
Current - Continuous Drain(Id):
1.5A
Operating Temperature -:
-55℃~+150℃
RDS(on):
130mΩ@4.5V,1.5A
Gate Threshold Voltage (Vgs(th)):
1V
Type:
P-Channel
Reverse Transfer Capacitance (Crss@Vds):
44pF
Number:
2 P-Channel
Output Capacitance(Coss):
55pF
Input Capacitance(Ciss):
272pF
Pd - Power Dissipation:
1.25W
Gate Charge(Qg):
4.1nC@4.5V
Mfr. Part #:
HSSK8811
Package:
SOT-363
Product Description
Product Overview
The HSSK8811 is a dual P-channel, 20V fast switching MOSFET designed with high cell density trench technology. It offers excellent RDS(ON) and efficiency, making it suitable for most small power switching and load switch applications. This device meets RoHS and Green Product requirements and is available as a green device. Key features include super low gate charge and excellent Cdv/dt effect decline.Product Attributes
- Brand: HS-Semi
- Product Type: Dual P-Channel MOSFET
- Voltage Rating: 20V
- Switching Speed: Fast Switching
- Technology: Trench
- Certifications: RoHS, Green Product
- Availability: Green Device Available
Technical Specifications
| Symbol | Parameter | Conditions | Min. | Typ. | Max. | Unit |
|---|---|---|---|---|---|---|
| Absolute Maximum Ratings | ||||||
| VDS | Drain-Source Voltage | -20 | V | |||
| VGS | Gate-Source Voltage | ±12 | V | |||
| ID@TC=25 | Continuous Drain Current, VGS @ -4.5V1 | -1.5 | A | |||
| ID@TC=70 | Continuous Drain Current, VGS @ -4.5V1 | -1.2 | A | |||
| IDM | Pulsed Drain Current2 | -4 | A | |||
| PD@TA=25 | Total Power Dissipation3 | 1.25 | W | |||
| TSTG | Storage Temperature Range | -55 | 150 | |||
| TJ | Operating Junction Temperature Range | -55 | 150 | |||
| Thermal Data | ||||||
| RJA | Thermal Resistance Junction-ambient1 | --- | 125 | /W | ||
| RJC | Thermal Resistance Junction-Case1 | --- | 100 | /W | ||
| Electrical Characteristics (TJ=25 , unless otherwise noted) | ||||||
| BVDSS | Drain-Source Breakdown Voltage | VGS=0V , ID=-250uA | -20 | --- | --- | V |
| RDS(ON) | Static Drain-Source On-Resistance2 | VGS=-4.5V , ID=-1.5A | 115 | 130 | m | |
| VGS=-2.5V , ID=-1A | 150 | 180 | m | |||
| VGS(th) | Gate Threshold Voltage | VGS=VDS , ID =-250uA | -0.3 | -0.65 | -1.0 | V |
| IDSS | Drain-Source Leakage Current | VDS=-16V , VGS=0V , TJ=25 | --- | -1 | uA | |
| VDS=-16V , VGS=0V , TJ=55 | --- | -5 | uA | |||
| IGSS | Gate-Source Leakage Current | VGS=±12V , VDS=0V | --- | ±100 | nA | |
| gfs | Forward Transconductance | VDS=-5V , ID=-1A | 5 | --- | S | |
| Qg | Total Gate Charge (-4.5V) | VDS=-15V , VGS=-4.5V , ID=-1.5A | 4.1 | --- | nC | |
| Qgs | Gate-Source Charge | 0.7 | --- | |||
| Qgd | Gate-Drain Charge | 1 | --- | |||
| Td(on) | Turn-On Delay Time | VDD=-10V , VGS=-4.5V , RG=3.3 ID=-1.5A | 12 | --- | ns | |
| Tr | Rise Time | 20 | --- | ns | ||
| Td(off) | Turn-Off Delay Time | 23 | --- | ns | ||
| Tf | Fall Time | 9 | --- | ns | ||
| Ciss | Input Capacitance | VDS=-10V , VGS=0V , f=1MHz | 272 | --- | pF | |
| Coss | Output Capacitance | 55 | --- | pF | ||
| Crss | Reverse Transfer Capacitance | 44 | --- | pF | ||
| Diode Characteristics | ||||||
| IS | Continuous Source Current1,4 | VG=VD=0V , Force Current | --- | -1.5 | A | |
| VSD | Diode Forward Voltage2 | VGS=0V , IS=-1A , TJ=25 | --- | -1.2 | V | |
| Part Number | Package Code | Packaging | Quantity |
|---|---|---|---|
| HSSK8811 | SOT-363 | 3000/Tape&Reel | 3000 |
2410121435_HUASHUO-HSSK8811_C845587.pdf
Related Products
power switching device XCH XCH6003 trenched N channel MOSFET with low gate charge and fast switching
Product OverviewThe XCH6003 is a high cell density trenched N-channel MOSFET designed for efficient power switching applications. It offers excellent RDS(ON) and efficiency, making it suitable for most low-power switching and load switch applications. This device features super low gate charge and ...
Surface mount ZHIDE ES5D rectifier with low leakage current and 100 volt maximum DC blocking voltage
Product OverviewThe ES5A-ES5M series are surface mount super fast recovery rectifiers designed for high-speed switching applications. They offer low reverse leakage, high forward surge capability, and high reliability, with guaranteed high-temperature soldering. These rectifiers are RoHS compliant ...
Robust industrial IGBT module YANGJIE MG50HF12TLC1 with low VCEsat and high short circuit capability
Product OverviewThe MG50HF12TLC1 S-M392 is a high-performance IGBT module designed for inverter applications, AC/DC servo drive amplifiers, UPS systems, and soft switching welding machines. It features low VCE(sat) with Trench technology, a positive temperature coefficient for VCE(sat), high short ...
Gallium Nitride Gan Hemts for Broadband Rf Applications Featuring Wolfspeed CGHV40050P Transistor
Product Overview The MACOM CGHV40050 is an unmatched Gallium Nitride (GaN) High Electron Mobility Transistor (HEMT) designed for general-purpose, broadband RF and microwave applications up to 4 GHz. Operating from a 50-volt rail, this device offers high efficiency, high gain, and wide bandwidth ...
Contact Our Experts And Get A Free Consultation!
Our mission is to offer "High Quality" & "Good Service" & "Fast Delivery" to help our clients to gain more profits.
