High cell density trenched MOSFET HUASHUO HSL6101 designed for synchronous buck converter power management
Key Attributes
Model Number:
HSL6101
Product Custom Attributes
Drain To Source Voltage:
60V
Current - Continuous Drain(Id):
4.3A
Operating Temperature -:
-55℃~+150℃
RDS(on):
110mΩ@10V
Gate Threshold Voltage (Vgs(th)):
2.5V
Type:
P-Channel
Reverse Transfer Capacitance (Crss@Vds):
34pF@15V
Number:
1 P-Channel
Output Capacitance(Coss):
51pF
Input Capacitance(Ciss):
715pF@15V
Pd - Power Dissipation:
2W
Gate Charge(Qg):
5.9nC@4.5V
Mfr. Part #:
HSL6101
Package:
SOT-223
Product Description
Product Overview
The HSL6101 is a high cell density trenched P-channel MOSFET designed for fast switching applications, particularly in synchronous buck converter designs. It offers excellent RDS(ON) and gate charge characteristics. This device meets RoHS and Green Product requirements and is 100% EAS guaranteed with full functional reliability approval. Key advantages include super low gate charge and excellent Cdv/dt effect decline, leveraging advanced high cell density trench technology.
Product Attributes
- Brand: HS-Semi
- Certifications: RoHS, Green Product
- Guarantees: 100% EAS Guaranteed
Technical Specifications
| Model | Package | Packaging | VDS (V) | RDS(ON) (m) | ID (A) | Qg (nC) | RJA (C/W) | RJC (C/W) |
|---|---|---|---|---|---|---|---|---|
| HSL6101 | SOT-223 | 3000/Tape&Reel | -60 | 130 (max) | -4.3 | 5.9 (typ) | 62.5 (max) | 10 (typ) |
| Parameter | Conditions | Min. | Typ. | Max. | Unit |
|---|---|---|---|---|---|
| VDS | Drain-Source Voltage | -60 | V | ||
| VGS | Gate-Source Voltage | 20 | V | ||
| ID@TA=25 | Continuous Drain Current, VGS @ -10V | -4.3 | A | ||
| ID@TA=70 | Continuous Drain Current, VGS @ -10V | -3.5 | A | ||
| IDM | Pulsed Drain Current | -14 | A | ||
| PD@TA=25 | Total Power Dissipation | 2 | W | ||
| TSTG | Storage Temperature Range | -55 | 150 | ||
| TJ | Operating Junction Temperature Range | -55 | 150 | ||
| BVDSS | Drain-Source Breakdown Voltage (VGS=0V, ID=-250uA) | -60 | V | ||
| BVDSS/TJ | BVDSS Temperature Coefficient (Ref. to 25, ID=-1mA) | -0.021 | V/ | ||
| RDS(ON) | Static Drain-Source On-Resistance (VGS=-10V, ID=-2A) | 110 | 130 | m | |
| RDS(ON) | Static Drain-Source On-Resistance (VGS=-4.5V, ID=-1.5A) | 140 | 190 | m | |
| VGS(th) | Gate Threshold Voltage (VGS=VDS, ID =-250uA) | -1.0 | -2.5 | V | |
| VGS(th) | VGS(th) Temperature Coefficient | 4.08 | mV/ | ||
| IDSS | Drain-Source Leakage Current (VDS=-48V, VGS=0V, TJ=25) | 1 | uA | ||
| IDSS | Drain-Source Leakage Current (VDS=-48V, VGS=0V, TJ=55) | 5 | uA | ||
| IGSS | Gate-Source Leakage Current (VGS=20V, VDS=0V) | 100 | nA | ||
| gfs | Forward Transconductance (VDS=-10V, ID=-2A) | 5.8 | S | ||
| Qg | Total Gate Charge (-4.5V) (VDS=-20V, VGS=-4.5V, ID=-2A) | 5.9 | nC | ||
| Qgs | Gate-Source Charge | 2.9 | nC | ||
| Qgd | Gate-Drain Charge | 1.8 | nC | ||
| td(on) | Turn-On Delay Time (VDS=-15V, VGS=-10V, RG=3.3, ID=-1A) | 10 | ns | ||
| tr | Rise Time | 17 | ns | ||
| td(off) | Turn-Off Delay Time | 22 | ns | ||
| tf | Fall Time | 21 | ns | ||
| Ciss | Input Capacitance (VDS=-15V, VGS=0V, f=1MHz) | 715 | pF | ||
| Coss | Output Capacitance | 51 | pF | ||
| Crss | Reverse Transfer Capacitance | 34 | pF | ||
| IS | Continuous Source Current (VG=VD=0V, Force Current) | -4 | A | ||
| VSD | Diode Forward Voltage (VGS=0V, IS=-1A, TJ=25) | -1.2 | V |
2410121641_HUASHUO-HSL6101_C5128192.pdf
Related Products
General purpose NPN transistor YANGJIE BCX56 with tin plated leads and low saturation voltage
Product OverviewThe BCX56 is an NPN General Purpose Amplifier from Yangzhou Yangjie Electronic Technology Co., Ltd. It features a low collector-emitter saturation voltage and is housed in a SOT-89 package with UL-94 V-0 flammability rating. Halogen-free options are available upon request. This ...
IGBT power module YANGJIE MG10P12P3 optimized for motor drivers AC DC servo drives and UPS systems
Product OverviewThe MG10P12P3 S-M452 is a high-performance IGBT module designed for demanding applications such as motor drivers, AC/DC servo drive amplifiers, and Uninterruptible Power Supplies (UPS). It features low switching losses, low VCE(sat), a positive temperature coefficient, and an ...
Power electronics IGBT YANGJIE MG150HF12TLC1 featuring trench technology and ultra fast soft recovery anti parallel FWD
Product OverviewThe MG150HF12TLC1 S-M409 is a high-performance IGBT module designed for demanding power electronics applications. It features low VCE(sat) with Trench technology, a positive temperature coefficient for VCE(sat), high short circuit capability, and an integrated ultra-fast & soft ...
Durable YANGJIE MG450HF12TLC2 IGBT module featuring trench technology for motion control welding and UPS
Product OverviewThe MG450HF12TLC2 is a high-performance IGBT module designed for motion/servo control, high-frequency switching applications, UPS, and welding machines. It features low Vce(sat) with Trench technology, low switching losses (particularly Eoff), a positive temperature coefficient for ...
Contact Our Experts And Get A Free Consultation!
Our mission is to offer "High Quality" & "Good Service" & "Fast Delivery" to help our clients to gain more profits.
