60V P channel MOSFET HUASHUO HSK6113 trench technology fast switching excellent RDS ON performance
Key Attributes
Model Number:
HSK6113
Product Custom Attributes
Drain To Source Voltage:
60V
Current - Continuous Drain(Id):
4A
Operating Temperature -:
-55℃~+150℃
RDS(on):
-
Gate Threshold Voltage (Vgs(th)):
2.5V
Reverse Transfer Capacitance (Crss@Vds):
50pF@15V
Number:
1 P-Channel
Input Capacitance(Ciss):
1.08nF@15V
Pd - Power Dissipation:
1.8W
Gate Charge(Qg):
11.8nC@4.5V
Mfr. Part #:
HSK6113
Package:
SOT-89
Product Description
Product Overview
The HSK6113 is a P-channel, 60V fast-switching MOSFET designed with high cell density trench technology. It offers excellent RDS(ON) and gate charge, making it suitable for most synchronous buck converter applications. This device meets RoHS and Green Product requirements and is 100% EAS guaranteed with full function reliability approval. Key features include super low gate charge and excellent Cdv/dt effect decline.Product Attributes
- Brand: HSK
- Type: P-Channel MOSFET
- Voltage Rating: 60V
- Technology: Trench
- Certifications: RoHS, Green Product
- Reliability: 100% EAS Guaranteed
Technical Specifications
| Symbol | Parameter | Conditions | Min. | Typ. | Max. | Unit |
|---|---|---|---|---|---|---|
| Absolute Maximum Ratings | ||||||
| VDS | Drain-Source Voltage | -60 | V | |||
| VGS | Gate-Source Voltage | ±20 | V | |||
| ID@TA=25 | Continuous Drain Current, VGS @ -10V1 | -4 | A | |||
| ID@TA=70 | Continuous Drain Current, VGS @ -10V1 | -3 | A | |||
| IDM | Pulsed Drain Current2 | -8.2 | A | |||
| EAS | Single Pulse Avalanche Energy3 | 29.7 | mJ | |||
| IAS | Avalanche Current | 24.4 | A | |||
| PD@TA=25 | Total Power Dissipation4 | 1.8 | W | |||
| TSTG | Storage Temperature Range | -55 | 150 | |||
| TJ | Operating Junction Temperature Range | -55 | 150 | |||
| Thermal Data | ||||||
| RJA | Thermal Resistance Junction-Ambient1 | 85 | /W | |||
| RJC | Thermal Resistance Junction-Case1 | 24 | /W | |||
| Electrical Characteristics (TJ=25 , unless otherwise noted) | ||||||
| BVDSS | Drain-Source Breakdown Voltage | VGS=0V , ID=-250uA | -60 | V | ||
| ΔBVDSS/ΔTJ | BVDSS Temperature Coefficient | Reference to 25 , ID=-1mA | -0.03 | V/ | ||
| RDS(ON) | Static Drain-Source On-Resistance2 | VGS=-10V , ID=-3A | 90 | m | ||
| VGS=-4.5V , ID=-2A | 115 | m | ||||
| VGS(th) | Gate Threshold Voltage | VGS=VDS , ID =-250uA | -1.2 | -2.5 | V | |
| ΔVGS(th) | VGS(th) Temperature Coefficient | 4.56 | mV/ | |||
| IDSS | Drain-Source Leakage Current | VDS=-48V , VGS=0V , TJ=25 | 1 | uA | ||
| VDS=-48V , VGS=0V , TJ=55 | 5 | uA | ||||
| IGSS | Gate-Source Leakage Current | VGS=±20V , VDS=0V | ±100 | nA | ||
| gfs | Forward Transconductance | VDS=-5V , ID=-3A | 8.7 | S | ||
| Rg | Gate Resistance | VDS=0V , VGS=0V , f=1MHz | 15 | |||
| Qg | Total Gate Charge (-4.5V) | VDS=-48V , VGS=-4.5V , ID=-3A | 11.8 | nC | ||
| Qgs | Gate-Source Charge | 1.9 | nC | |||
| Qgd | Gate-Drain Charge | 6.5 | nC | |||
| td(on) | Turn-On Delay Time | VDD=-15V , VGS=-10V , RG=3.3, ID=-1A | 8.8 | ns | ||
| tr | Rise Time | 19.6 | ns | |||
| td(off) | Turn-Off Delay Time | 47.2 | ns | |||
| tf | Fall Time | 9.6 | ns | |||
| Ciss | Input Capacitance | VDS=-15V , VGS=0V , f=1MHz | 1080 | pF | ||
| Coss | Output Capacitance | 73 | pF | |||
| Crss | Reverse Transfer Capacitance | 50 | pF | |||
| Diode Characteristics | ||||||
| IS | Continuous Source Current1,5 | VG=VD=0V , Force Current | -4 | A | ||
| ISM | Pulsed Source Current2,5 | -8.2 | A | |||
| VSD | Diode Forward Voltage2 | VGS=0V , IS=-1A , TJ=25 | -1.2 | V | ||
Notes:
- 1. Data tested by surface mounted on a 1 inch2 FR-4 board with 2OZ copper.
- 2. Data tested by pulsed, pulse width ≤ 300us, duty cycle ≤ 2%.
- 3. EAS data shows Max. rating. Test condition: VDD=-25V, VGS=-10V, L=0.1mH, IAS=-24.4A.
- 4. Power dissipation is limited by 150 junction temperature.
- 5. Data is theoretically the same as ID and IDM. In real applications, should be limited by total power dissipation.
| Part Number | Package Code | Packaging |
|---|---|---|
| HSK6113 | SOT-89 | 1000/Tape&Reel |
2410121456_HUASHUO-HSK6113_C5341684.pdf
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