power conversion N channel MOSFET HUASHUO HSH044N25 with low gate charge and high cell density trench technology
Key Attributes
Model Number:
HSH044N25
Product Custom Attributes
Drain To Source Voltage:
250V
Current - Continuous Drain(Id):
50A
Operating Temperature -:
-55℃~+175℃
RDS(on):
44mΩ@10V
Gate Threshold Voltage (Vgs(th)):
5V@250uA
Type:
N-Channel
Reverse Transfer Capacitance (Crss@Vds):
85pF@50V
Number:
1 N-channel
Input Capacitance(Ciss):
8.547nF@50V
Pd - Power Dissipation:
83W
Gate Charge(Qg):
155nC@10V
Mfr. Part #:
HSH044N25
Package:
TO-263
Product Description
Product Overview
The HSH044N25 is a high-performance N-channel MOSFET featuring an extreme high cell density trench technology. It offers excellent RDS(ON) and gate charge characteristics, making it ideal for synchronous buck converter applications. This device meets RoHS and Green Product requirements and is 100% EAS guaranteed with full function reliability approved. Key advantages include super low gate charge, excellent Cdv/dt effect decline, and advanced high cell density trench technology.
Product Attributes
- Brand: HS-Semi
- Product Type: N-Ch Fast Switching MOSFETs
- Certifications: RoHS, Green Product
- Reliability: 100% EAS guaranteed, full function reliability approved
Technical Specifications
| Symbol | Parameter | Conditions | Min. | Typ. | Max. | Units |
|---|---|---|---|---|---|---|
| Absolute Maximum Ratings | ||||||
| VDS | Drain-Source Voltage | 250 | V | |||
| VGS | Gate-Source Voltage | 20 | V | |||
| ID@TC=25 | Continuous Drain Current, VGS @ 10V1 | 50 | A | |||
| ID@TC=100 | Continuous Drain Current, VGS @ 10V1 | 34 | A | |||
| IDM | Pulsed Drain Current2 | 195 | A | |||
| EAS | Single Pulse Avalanche Energy3 | 165 | mJ | |||
| PD@TC=25 | Total Power Dissipation3 | 83 | W | |||
| TSTG | Storage Temperature Range | -55 | 175 | |||
| TJ | Operating Junction Temperature Range | -55 | 175 | |||
| Thermal Data | ||||||
| RJA | Thermal Resistance Junction-ambient1 | --- | 60 | /W | ||
| RJC | Thermal Resistance Junction-Case1 | --- | 0.48 | /W | ||
| Electrical Characteristics (TJ=25 , unless otherwise noted) | ||||||
| BVDSS | Drain-Source Breakdown Voltage | VGS=0V , ID=250uA | 250 | --- | --- | V |
| RDS(ON) | Static Drain-Source On-Resistance2 | VGS=10V , ID=5A | --- | 34 | 44 | m |
| VGS(th) | Gate Threshold Voltage | VGS=VDS , ID =250uA | 3 | --- | 5 | V |
| IDSS | Drain-Source Leakage Current | VDS=150V , VGS=0V , TJ=25 | --- | --- | 1 | uA |
| IDSS | Drain-Source Leakage Current | VDS=150V , VGS=0V , TJ=125 | --- | --- | 100 | uA |
| IGSS | Gate-Source Leakage Current | VGS=20V , VDS=0V | --- | --- | 100 | nA |
| gfs | Forward Transconductance | VDS=10V , ID=20A | --- | 75 | --- | S |
| Rg | Gate Resistance | VDS=0V , VGS=0V , f=1MHz | --- | 1.5 | --- | |
| Qg | Total Gate Charge (10V) | VDS=50V , VGS=10V , ID=40A | --- | 155 | --- | nC |
| Qgs | Gate-Source Charge | --- | 23 | --- | nC | |
| Qgd | Gate-Drain Charge | --- | 45 | --- | nC | |
| td(on) | Turn-On Delay Time | VDD=50V , VGS=10V , RG=3.3, ID=40A | --- | 33 | --- | ns |
| tr | Rise Time | --- | 8.2 | --- | ns | |
| td(off) | Turn-Off Delay Time | --- | 65 | --- | ns | |
| tf | Fall Time | --- | 6 | --- | ns | |
| Ciss | Input Capacitance | VDS=50V , VGS=0V , f=1MHz | --- | 8547 | --- | pF |
| Coss | Output Capacitance | --- | 429 | --- | pF | |
| Crss | Reverse Transfer Capacitance | --- | 85 | --- | pF | |
| Diode Characteristics | ||||||
| IS | Continuous Source Current1,5 | VG=VD=0V , Force Current | --- | --- | 50 | A |
| VSD | Diode Forward Voltage2 | VGS=0V , IS=20A , TJ=25 | --- | --- | 1.2 | V |
| trr | Reverse Recovery Time | IF=40A , dI/dt=100A/s , TJ=25 | --- | 157 | --- | ns |
| Qrr | Reverse Recovery Charge | --- | 1073 | --- | nC | |
2410122017_HUASHUO-HSH044N25_C28314525.pdf
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