Load Switch Applications with HXY MOSFET AO3401 ED P Channel Device Offering Low Gate Charge and RDS
Key Attributes
Model Number:
AO3401-ED
Product Custom Attributes
Drain To Source Voltage:
20V
Current - Continuous Drain(Id):
3A
Operating Temperature -:
-
RDS(on):
120mΩ@4.5V,2A
Gate Threshold Voltage (Vgs(th)):
400mV
Reverse Transfer Capacitance (Crss@Vds):
29pF@10V
Number:
1 P-Channel
Input Capacitance(Ciss):
260pF@10V
Pd - Power Dissipation:
700mW
Gate Charge(Qg):
3.9nC@4.5V
Mfr. Part #:
AO3401-ED
Package:
SOT-23
Product Description
Product Overview
The AO3401-ED is a P-Channel Enhancement Mode MOSFET utilizing advanced trench technology. It offers excellent RDS(ON), low gate charge, and can operate with gate voltages as low as 1.8V. This device is ideal for load switch and PWM applications.
Product Attributes
- Brand: HUAXUANYANG HXY
- Origin: Shenzhen HuaXuanYang Electronics CO.,LTD
- Website: www.hxymos.com
Technical Specifications
| Parameter | Symbol | Conditions | Min | Typ | Max | Unit |
| Absolute Maximum Ratings | ||||||
| Drain-Source Voltage | VDS | -20 | V | |||
| Gate-Source Voltage | VGS | ±12 | V | |||
| Drain Current-Continuous | ID | -3 | A | |||
| Drain Current-Pulsed (Note 1) | IDM | -10 | A | |||
| Maximum Power Dissipation | PD | 0.7 | W | |||
| Operating Junction and Storage Temperature Range | TJ, TSTG | -55 | 150 | |||
| Thermal Resistance, Junction-to-Ambient (Note 2) | RJA | 178 | /W | |||
| Electrical Characteristics | ||||||
| Static Parameter | ||||||
| Drain-Source Breakdown Voltage | BVDSS | VGS= 0V, ID=-250A | -20 | V | ||
| Zero Gate Voltage Drain Current | IDSS | VDS=-15V,VGS=0V,TC=25 | -1 | µA | ||
| Gate-Body Leakage Current | IGSS | VGS= ±10V, VDS=0V | ±100 | nA | ||
| Gate Threshold Voltage | VGS(th) | VDS= VGS, ID=-250µA | -0.4 | -0.62 | -1.0 | V |
| Static Drain-Source On-Resistance | RDS(ON) | VGS= -4.5V, ID=-2A | 100 | 130 | mΩ | |
| VGS= -2.5V, ID=-1.6A | 132 | 148 | mΩ | |||
| Diode Forward Voltage | VSD | IS=-2A,VGS=0V | -0.8 | -1.2 | V | |
| Maximum Body-Diode Continuous Current | IS | -2.3 | A | |||
| Dynamic Parameters | ||||||
| Input Capacitance | Ciss | VDS=-10V,VGS=0V,f=1MHZ | 260 | pF | ||
| Output Capacitance | Coss | 44 | pF | |||
| Reverse Transfer Capacitance | Crss | 29 | pF | |||
| Switching Parameters | ||||||
| Total Gate Charge | Qg | VGS=-4.5V,VDS=-10V,ID=-2A | 3.9 | nC | ||
| Gate Source Charge | Qgs | 0.7 | nC | |||
| Gate Drain Charge | Qg d | 0.9 | nC | |||
| Turn-on Delay Time | tD(on) | VGS=-4.5V,VDD=-10V, ID=-1A, RGEN=2.5Ω | 12 | ns | ||
| Turn-on Rise Time | tr | 54 | ns | |||
| Turn-off Delay Time | tD(off) | 15 | ns | |||
| Turn-off Fall Time | tf | 9 | ns | |||
2509181600_HXY-MOSFET-AO3401-ED_C4748724.pdf
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