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quality Fast Switching N Channel MOSFET HUASHUO HSH250N10 100V Low RDS ON Ideal for Battery Management Systems factory
quality Fast Switching N Channel MOSFET HUASHUO HSH250N10 100V Low RDS ON Ideal for Battery Management Systems factory

Fast Switching N Channel MOSFET HUASHUO HSH250N10 100V Low RDS ON Ideal for Battery Management Systems

Key Attributes
Model Number: HSH250N10
Product Custom Attributes
Drain To Source Voltage:
100V
Current - Continuous Drain(Id):
250A
Operating Temperature -:
-55℃~+150℃
RDS(on):
2.3mΩ@10V
Gate Threshold Voltage (Vgs(th)):
4V@250uA
Type:
N-Channel
Reverse Transfer Capacitance (Crss@Vds):
55pF@50V
Number:
1 N-channel
Input Capacitance(Ciss):
10.15nF@50V
Pd - Power Dissipation:
411W
Gate Charge(Qg):
195nC@10V
Mfr. Part #:
HSH250N10
Package:
TO-263
Product Description

Product Overview

HSH250N10 is a N-Channel 100V Fast Switching MOSFET designed for high-frequency switching and synchronous rectification applications. It features advanced high cell density Trench technology, offering super low RDS(ON) and 100% EAS Guaranteed. This MOSFET is suitable for use in Motor Drivers and Battery Management Systems (BMS). A Green Device version is available.

Product Attributes

  • Brand: HSH
  • Technology: Trench
  • Device Type: N-Channel MOSFET
  • Switching Speed: Fast
  • Availability: Green Device Available

Technical Specifications

Symbol Parameter Conditions Min. Typ. Max. Unit
Absolute Maximum Ratings
VDS Drain-Source Voltage 100 V
VGS Gate-Source Voltage ±20/-12 V
ID@TC=25 Continuous Drain Current, VGS @ 10V1,6 250 A
ID@TC=100 Continuous Drain Current, VGS @ 10V1,6 158 A
IDM Pulsed Drain Current2 1000 A
EAS Single Pulse Avalanche Energy3 940 mJ
IAS Avalanche Current 135 A
PD@TC=25 Total Power Dissipation4 411 W
TSTG Storage Temperature Range -55 150
TJ Operating Junction Temperature Range -55 150
Thermal Data
RJA Thermal Resistance Junction-Ambient --- 62 /W
RJC Thermal Resistance Junction-Case1 --- 0.3 /W
Electrical Characteristics (TJ=25 , unless otherwise noted)
BVDSS Drain-Source Breakdown Voltage VGS=0V , ID=250uA 100 --- --- V
RDS(ON),typ Static Drain-Source On-Resistance2 VGS=10V , ID=40A 1.9 2.3 mΩ
VGS(th) Gate Threshold Voltage VGS=VDS , ID =250uA 2.0 3.0 4.0 V
IDSS Drain-Source Leakage Current VDS=100V , VGS=0V , TJ=25 --- 1 uA
IDSS Drain-Source Leakage Current VDS=80V , VGS=0V , TJ=85 --- 10 uA
IGSS Gate-Source Leakage Current VGS=±20V , VDS=0V --- ±100 nA
gfs Forward Transconductance VDS=10V , ID=3A 20 --- S
Rg Gate Resistance VDS=0V , VGS=0V , f=1MHz 1.1 --- Ω
Qg Total Gate Charge (10V) VDS=50V , VGS=10V , ID=10A 195 --- nC
Qgs Gate-Source Charge 21 --- nC
Qgd Gate-Drain Charge 30 --- nC
Td(on) Turn-On Delay Time VDD=50V , VGS=10V , RG=3.3Ω, ID=1A 21 --- ns
Tr Rise Time 21 --- ns
Td(off) Turn-Off Delay Time 69 --- ns
Tf Fall Time 120 --- ns
Ciss Input Capacitance VDS=50V , VGS=0V , f=1MHz 10150 --- pF
Coss Output Capacitance 2100 --- pF
Crss Reverse Transfer Capacitance 55 --- pF
Diode Characteristics
IS Continuous Source Current1,5 VG=VD=0V , Force Current --- 250 A
VSD Diode Forward Voltage2 VGS=0V , IS=1A , TJ=25 --- 1 V
trr Reverse Recovery Time IF=10A , dI/dt=100A/µs , TJ=25 95 --- nS
Qrr Reverse Recovery Charge 670 --- nC

Applications:

  • MOTOR Driver.
  • BMS.
  • High frequency switching and synchronous rectification.

Features:

  • 100% EAS Guaranteed
  • Green Device Available
  • Super Low RDS(ON)
  • Advanced high cell density Trench technology

2410121637_HUASHUO-HSH250N10_C2828505.pdf
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