Halogen Free MOSFET HUAYI HYG025N06LS1C2 with Low RDS ON and High Junction Temperature Capability
Key Attributes
Model Number:
HYG025N06LS1C2
Product Custom Attributes
Drain To Source Voltage:
60V
Current - Continuous Drain(Id):
170A
Operating Temperature -:
-55℃~+175℃
RDS(on):
3.8mΩ@4.5V
Gate Threshold Voltage (Vgs(th)):
3V@250uA
Type:
N-Channel
Reverse Transfer Capacitance (Crss@Vds):
10.2pF
Number:
1 N-channel
Input Capacitance(Ciss):
3.915nF@0V
Pd - Power Dissipation:
130W
Gate Charge(Qg):
59.5nC@10V
Mfr. Part #:
HYG025N06LS1C2
Package:
PDFN-8(5x6)
Product Description
Product Overview
The HYG025N06LS1C2 is a single N-Channel Enhancement Mode MOSFET designed for high-performance applications. It features low on-state resistance (RDS(ON)) of 2.1 m (typ.) at VGS = 10V and 3.2 m (typ.) at VGS = 4.5V, 100% avalanche tested, and a reliable, rugged design. Halogen-free options are available, complying with RoHS standards. This MOSFET is ideal for high-frequency point-of-load synchronous buck converters, power tool applications, and networking DC-DC power systems.
Product Attributes
- Brand: HYG (Huayi Microelectronics)
- Origin: China
- Material: Halogen-Free Devices Available (RoHS Compliant)
- Certifications: RoHS Compliant, IPC/JEDEC J-STD-020 compliant for MSL classification
Technical Specifications
| Symbol | Parameter | Test Conditions | Unit | Min | Typ. | Max |
| Absolute Maximum Ratings | ||||||
| VDSS | Drain-Source Voltage | V | 60 | |||
| VGSS | Gate-Source Voltage | V | 20 | |||
| TJ | Maximum Junction Temperature | C | 175 | |||
| TSTG | Storage Temperature Range | C | -55 | 175 | ||
| ID | Continuous Drain Current | Tc=25C | A | 170 | ||
| ID | Continuous Drain Current | Tc=100C | A | 120 | ||
| IDM | Pulsed Drain Current | Tc=25C | A | 610 | ||
| PD | Maximum Power Dissipation | Tc=25C | W | 130 | ||
| PD | Maximum Power Dissipation | Tc=100C | W | 65.2 | ||
| RJC | Thermal Resistance, Junction-to-Case | C/W | 1.15 | |||
| RJA | Thermal Resistance, Junction-to-Ambient | Surface mounted on FR-4 board | C/W | 47 | ||
| EAS | Single Pulsed-Avalanche Energy | L=0.3mH | mJ | 301.8 | ||
| Electrical Characteristics | ||||||
| BVDSS | Drain-Source Breakdown Voltage | VGS=0V, IDS=250A | V | 60 | ||
| IDSS | Drain-to-Source Leakage Current | VDS=60V,VGS=0V | A | 1 | ||
| IDSS | Drain-to-Source Leakage Current | TJ=100C | A | 50 | ||
| VGS(th) | Gate Threshold Voltage | VDS=VGS, IDS=250A | V | 1.0 | 2.1 | 3.0 |
| IGSS | Gate-Source Leakage Current | VGS=20V,VDS=0V | nA | 100 | ||
| RDS(ON) | Drain-Source On-State Resistance | VGS=10V,IDS=20A | m | 2.1 | 2.5 | |
| RDS(ON) | Drain-Source On-State Resistance | VGS=4.5V,IDS=20A | m | 3.2 | 3.8 | |
| VSD | Diode Forward Voltage | ISD=20A,VGS=0V | V | 0.8 | 1.3 | |
| trr | Reverse Recovery Time | ISD=20A,dISD/dt=100A/s | ns | 43.6 | ||
| Qrr | Reverse Recovery Charge | nC | 55.3 | |||
| RG | Gate Resistance | VGS=0V,VDS=0V,F=1MHz | 0.58 | |||
| Ciss | Input Capacitance | VGS=0V, VDS=25V, Frequency=1.0MHz | pF | 3915 | ||
| Coss | Output Capacitance | pF | 1310 | |||
| Crss | Reverse Transfer Capacitance | pF | 10.2 | |||
| td(ON) | Turn-on Delay Time | VDD=30V,RG=4, IDS=20A,VGS=10V | ns | 15.3 | ||
| Tr | Turn-on Rise Time | ns | 34 | |||
| td(OFF) | Turn-off Delay Time | ns | 33 | |||
| Tf | Turn-off Fall Time | ns | 9.4 | |||
| Qg(10V) | Total Gate Charge | VDS =48V, VGS=10V, ID=20A | nC | 59.5 | ||
| Qg(4.5V) | Total Gate Charge | nC | 28.2 | |||
| Qgs | Gate-Source Charge | nC | 15.9 | |||
| Qgd | Gate-Drain Charge | nC | 9.6 | |||
2409302203_HUAYI-HYG025N06LS1C2_C2827231.pdf
Related Products
Planar die Zener diode XZT BZT52C7V5 designed for medium current applications and automated assembly
Product OverviewThe BZT52C2V4 thru BZT52C43 series is a range of Zener diodes featuring planar die construction. These diodes are designed for general purpose, medium current applications and are ideally suited for automated assembly processes. They are available in a lead-free version.Product ...
complementary mosfets featuring xnrusemi xr20g10 with n channel and p channel fast switching capabilities
XR20G10 N-Ch and P-Ch Fast Switching MOSFETs Product Description The XR20G10 is a high-performance complementary N-channel and P-channel MOSFET series featuring extreme high cell density. This design provides excellent RDS(ON) and gate charge characteristics, making it ideal for synchronous buck ...
power switching device XCH XCH6003 trenched N channel MOSFET with low gate charge and fast switching
Product OverviewThe XCH6003 is a high cell density trenched N-channel MOSFET designed for efficient power switching applications. It offers excellent RDS(ON) and efficiency, making it suitable for most low-power switching and load switch applications. This device features super low gate charge and ...
High speed switching transistor YANGJIE DGP15N65CTL designed for hard and soft switching applications
Product OverviewThe DGP15N65CTL0 is a high-speed smooth switching IGBT discrete device designed for hard and soft switching applications. It features a maximum junction temperature of 175, a positive temperature coefficient, and high ruggedness with temperature stability. This IGBT is suitable for ...
Contact Our Experts And Get A Free Consultation!
Our mission is to offer "High Quality" & "Good Service" & "Fast Delivery" to help our clients to gain more profits.
