Trenched N Channel MOSFET HUASHUO HSP120N08 suitable for high current and fast switching requirements
Key Attributes
Model Number:
HSP120N08
Product Custom Attributes
Drain To Source Voltage:
80V
Current - Continuous Drain(Id):
120A
Operating Temperature -:
-55℃~+175℃
RDS(on):
5.7mΩ@10V,50A
Gate Threshold Voltage (Vgs(th)):
3V
Type:
N-Channel
Reverse Transfer Capacitance (Crss@Vds):
35pF
Number:
1 N-channel
Output Capacitance(Coss):
548pF
Input Capacitance(Ciss):
4.033nF
Pd - Power Dissipation:
220W
Gate Charge(Qg):
66nC@10V
Mfr. Part #:
HSP120N08
Package:
TO-220
Product Description
Product Overview
The HSP120N08 is a high cell density trenched N-channel MOSFET designed for fast switching applications. It offers excellent RDS(ON) and gate charge characteristics, making it ideal for synchronous buck converter applications. This MOSFET meets RoHS and Green Product requirements, is 100% EAS guaranteed, and has full function reliability approval. Key application areas include motor drives, synchronous rectification (SR), and DC/DC converters.
Product Attributes
- Brand: HS-Semi
- Product Type: N-Channel MOSFET
- Technology: Advanced high cell density Trench technology
- Certifications: RoHS, Green Product
- Reliability: 100% EAS Guaranteed, full function reliability approved
Technical Specifications
| Symbol | Parameter | Conditions | Min. | Typ. | Max. | Units |
|---|---|---|---|---|---|---|
| Absolute Maximum Ratings | ||||||
| VDS | Drain-Source Voltage | 80 | V | |||
| VGS | Gate-Source Voltage | 20 | V | |||
| ID@TC=25 | Continuous Drain Current, VGS @ 10V1,6 | 120 | A | |||
| ID@TC=100 | Continuous Drain Current, VGS @ 10V1,6 | 100 | A | |||
| IDM | Pulsed Drain Current2 | 480 | A | |||
| EAS | Single Pulse Avalanche Energy3 | 560 | mJ | |||
| PD@TC=25 | Total Power Dissipation4 | 220 | W | |||
| TSTG | Storage Temperature Range | -55 | 175 | |||
| TJ | Operating Junction Temperature Range | -55 | 175 | |||
| Thermal Data | ||||||
| RJA | Thermal Resistance Junction-Ambient | 60 | /W | |||
| RJC | Thermal Resistance Junction-Case1 | 0.7 | /W | |||
| Electrical Characteristics (TJ=25 , unless otherwise noted) | ||||||
| BVDSS | Drain-Source Breakdown Voltage | VGS=0V , ID=250uA | 80 | 92 | V | |
| RDS(ON) | Static Drain-Source On-Resistance2 | VGS=10V , ID=50A | 4.7 | 5.7 | m | |
| VGS(th) | Gate Threshold Voltage | VGS=VDS , ID =250uA | 2 | 3 | 4 | V |
| IDSS | Drain-Source Leakage Current | VDS=80V , VGS=0V , TJ=25 | 1 | uA | ||
| VDS=64V , VGS=0V , TJ=25 | 100 | |||||
| IGSS | Gate-Source Leakage Current | VGS=20V , VDS=0V | 100 | nA | ||
| gfs | Forward Transconductance | VDS=5V , ID=30A | 80 | S | ||
| Rg | Gate Resistance | VDS=0V , VGS=0V , f=1MHz | 1.6 | |||
| Qg | Total Gate Charge (10V) | VDD=40V , VGS=10V , ID=25A | 66 | nC | ||
| Qgs | Gate-Source Charge | 25 | ||||
| Qgd | Gate-Drain Charge | 14 | ||||
| Td(on) | Turn-On Delay Time | VDD=40V , VGS=10V , RG=3, ID=25A | 20 | ns | ||
| Tr | Rise Time | 39 | ||||
| Td(off) | Turn-Off Delay Time | 44 | ||||
| Tf | Fall Time | 22 | ||||
| Ciss | Input Capacitance | VDS=40V , VGS=0V , f=1MHz | 4033 | pF | ||
| Coss | Output Capacitance | 548 | ||||
| Crss | Reverse Transfer Capacitance | 35 | ||||
| Diode Characteristics | ||||||
| IS | Continuous Source Current1,5 | VG=VD=0V , Force Current | 120 | A | ||
| VSD | Diode Forward Voltage2 | VGS=0V , IS=50A , TJ=25 | 1.2 | V | ||
| trr | Reverse Recovery Time | IF=20A , dI/dt=500A/s , TJ=25 | 60 | nS | ||
| Qrr | Reverse Recovery Charge | 340 | nC | |||
2411121146_HUASHUO-HSP120N08_C845616.pdf
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