High Speed Switching HXY MOSFET HC3M0016120D Silicon Carbide SiC with Low Capacitance and Fast Diode
Key Attributes
Model Number:
HC3M0016120D
Product Custom Attributes
Drain To Source Voltage:
1.2kV
Current - Continuous Drain(Id):
115A
Operating Temperature -:
-40℃~+175℃
RDS(on):
22.3mΩ
Gate Threshold Voltage (Vgs(th)):
3.6V
Reverse Transfer Capacitance (Crss@Vds):
13pF
Output Capacitance(Coss):
230pF
Input Capacitance(Ciss):
6.085nF
Pd - Power Dissipation:
556W
Gate Charge(Qg):
207nC
Mfr. Part #:
HC3M0016120D
Package:
TO-247-3L
Product Description
Product Overview
This 3rd generation SiC MOSFET technology offers high blocking voltage with low on-resistance and high-speed switching with low capacitances. It features a fast intrinsic diode with low reverse recovery, making it ideal for applications requiring reduced switching losses, increased system efficiency, and higher power density. The device is halogen-free and RoHS compliant.
Product Attributes
- Brand: HUAXUANYANG ELECTRONICS CO.,LTD
- Origin: Shenzhen, China
- Material: SiC (Silicon Carbide)
- Certifications: RoHS compliant, Halogen free
Technical Specifications
| Part Number | Package | Marking | VDSmax (V) | VGSmax (V) | ID (A) @ TC=25C | PD (W) @ TC=25C | VGS(th) (V) | RDS(on) (m) @ VGS=15V, ID=75A | Ciss (pF) | Coss (pF) | Crss (pF) | VSD (V) @ ISD=37.5A, TJ=25C | trr (ns) @ ISD=75A, TJ=175C | Qrr (nC) @ ISD=75A, TJ=175C | RJC (C/W) |
| HC3M0016120D | TO-247 | HC3M0016120D | 1200 | -8/+19 | 115 | 556 | 1.8-3.6 | 11.2-22.3 | 6085 | 230 | 13 | 4.6 | 96 | 604 | 0.27 |
2509181522_HXY-MOSFET-HC3M0016120D_C19723854.pdf
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