P Channel MOSFET HUASHUO HSP80P10 with RoHS Certification and Excellent Gate Charge Characteristics
Key Attributes
Model Number:
HSP80P10
Product Custom Attributes
Drain To Source Voltage:
100V
Current - Continuous Drain(Id):
80A
Operating Temperature -:
-55℃~+150℃
RDS(on):
20mΩ@10V
Gate Threshold Voltage (Vgs(th)):
1.8V
Type:
P-Channel
Reverse Transfer Capacitance (Crss@Vds):
99pF
Number:
1 P-Channel
Output Capacitance(Coss):
289pF
Input Capacitance(Ciss):
11.66nF
Pd - Power Dissipation:
210W
Gate Charge(Qg):
180nC@10V
Mfr. Part #:
HSP80P10
Package:
TO-220
Product Description
Product Overview
The HSP80P10 is a P-Channel Fast Switching MOSFET designed with advanced trench technology, offering excellent RDS(ON) and gate charge. It meets RoHS and Green Product requirements and is 100% EAS guaranteed with full function reliability. This MOSFET is suitable for a wide variety of applications, including portable equipment and battery-powered systems, and features excellent CdV/dt effect decline.
Product Attributes
- Brand: HS-SMEI
- Product Type: P-Channel MOSFET
- Technology: Advanced Trench MOSFET
- Certifications: RoHS, Green Product
- Reliability: 100% EAS Guaranteed
Technical Specifications
| Model | Parameter | Conditions | Min. | Typ. | Max. | Units | |
|---|---|---|---|---|---|---|---|
| HSP80P10 | Drain-Source Voltage (VDS) | -100 | V | ||||
| Gate-Source Voltage (VGS) | ±20 | V | |||||
| Continuous Drain Current (ID) @TC=25 | VGS @ -10V | -80 | A | ||||
| Continuous Drain Current (ID) @TC=100 | VGS @ -10V | -57 | A | ||||
| Pulsed Drain Current (IDM) | -225 | A | |||||
| Single Pulse Avalanche Energy (EAS) | 310 | mJ | |||||
| Total Power Dissipation (PD) @TC=25 | 210 | W | |||||
| Storage Temperature Range (TSTG) | -55 | 150 | |||||
| Operating Junction Temperature Range (TJ) | -55 | 150 | |||||
| Thermal Resistance Junction-Ambient (RJA) | --- | 62 | /W | ||||
| Thermal Resistance Junction-Case (RJC) | --- | 0.7 | /W | ||||
| Drain-Source Breakdown Voltage (BVDSS) | VGS=0V , ID=-250uA | -100 | V | ||||
| Static Drain-Source On-Resistance (RDS(ON)) | VGS=-10V , ID=-40A | 20 | 28 | m | |||
| Static Drain-Source On-Resistance (RDS(ON)) | VGS=-4.5V , ID=-40A | 24 | 32 | m | |||
| Gate Threshold Voltage (VGS(th)) | VGS=VDS , ID =-250uA | -1.0 | -1.8 | -3 | V | ||
| HSP80P10 | Drain-Source Leakage Current (IDSS) | VDS=-100V , VGS=0V , TJ=25 | --- | -50 | uA | ||
| Gate-Source Leakage Current (IGSS) | VGS=±20V , VDS=0V | --- | ±100 | nA | |||
| Gate Resistance (Rg) | VGS=0V , VDS=0V,F=1MHz | --- | 4.7 | --- | |||
| Forward Transconductance (gfs) | VDS=-10V , ID=-10A | --- | 32 | --- | S | ||
| Total Gate Charge (Qg) | VDS=-50V , VGS=-10V , ID=-20A | --- | 180 | --- | nC | ||
| Gate-Source Charge (Qgs) | --- | 44 | --- | ||||
| Gate-Drain Charge (Qgd) | --- | 29 | --- | ||||
| Turn-On Delay Time (Td(on)) | VDD=-50V , VGS=-10V , RG=4, ID=-20A | --- | 16 | --- | ns | ||
| Rise Time (Tr) | --- | 91 | --- | ns | |||
| Turn-Off Delay Time (Td(off)) | --- | 208 | --- | ns | |||
| HSP80P10 | Fall Time (Tf) | --- | 110 | --- | ns | ||
| Input Capacitance (Ciss) | VDS=-50V , VGS=0V , f=1MHz | --- | 11660 | --- | pF | ||
| Output Capacitance (Coss) | --- | 289 | --- | pF | |||
| Reverse Transfer Capacitance (Crss) | --- | 99 | --- | pF | |||
| Continuous Source Current (IS) | VG=VD=0V , Force Current | --- | --- | -80 | A | ||
| HSP80P10 | Diode Forward Voltage (VSD) | VGS=0V , IS=-40A , TJ=25 | --- | -1.3 | V | ||
| Reverse Recovery Time (trr) | IF=-40A , di/dt=-100A/s , TJ=25 | --- | 31.2 | --- | nS | ||
| HSP80P10 | Reverse Recovery Charge (Qrr) | --- | 45 | --- | nC |
2410121631_HUASHUO-HSP80P10_C845619.pdf
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