HXY MOSFET IMZA120R014M1HXKSA1-HXY SiC Power MOSFET with High Blocking Voltage and Low On Resistance
Key Attributes
Model Number:
IMZA120R014M1HXKSA1-HXY
Product Custom Attributes
Drain To Source Voltage:
1.2kV
Current - Continuous Drain(Id):
167A
Operating Temperature -:
-55℃~+175℃
RDS(on):
13mΩ
Gate Threshold Voltage (Vgs(th)):
2.9V
Reverse Transfer Capacitance (Crss@Vds):
29pF
Input Capacitance(Ciss):
3.815nF
Pd - Power Dissipation:
555W
Output Capacitance(Coss):
239pF
Gate Charge(Qg):
216nC
Mfr. Part #:
IMZA120R014M1HXKSA1-HXY
Package:
TO-247-4L
Product Description
Product Overview
The HUAXUANYANG HXY ELECTRONICS CO.,LTD SiC Power MOSFET, model IMZA120R014M1HXKSA1, is an N-Channel Enhancement Mode device designed for high-performance power applications. It offers high blocking voltage with low on-resistance, high-speed switching with low capacitance, and is easy to parallel and simple to drive. Key features include resistance to latch-up and compliance with Halogen Free and RoHS standards. This MOSFET is suitable for applications such as solar inverters, switch mode power supplies, high voltage DC/DC converters, and EV motor drives.
Product Attributes
- Brand: HUAXUANYANG (HXY ELECTRONICS CO.,LTD)
- Origin: Shenzhen
- Material: SiC (Silicon Carbide)
- Certifications: Halogen Free, RoHS Compliant
Technical Specifications
| Parameter | Symbol | Condition | Value | Unit | Min | Typ. | Max |
| Drain-Source Breakdown Voltage | V(BR)DSS | VGS=0V, ID=100A | 1200 | V | |||
| Gate Threshold Voltage | VGS(th) | VDS=VGS, ID=20mA, Tvj=25 | V | 2.9 | |||
| Gate Threshold Voltage | VGS(th) | VDS=VGS, ID=20mA, Tvj=175 | V | 2.1 | |||
| Zero Gate Voltage Drain Current | IDSS | VDS=1200V, VGS=0V | A | 1 | 100 | ||
| Gate-Source Leakage Current | IGSS | VGS=18V, VDS=0V | nA | 1 | 100 | ||
| Drain-Source On-State Resistance | RDS(on) | VGS=18V, ID=75A, Tvj=25 | m | 13 | |||
| Drain-Source On-State Resistance | RDS(on) | VGS=18V, ID=75A, Tvj=175 | m | 20 | |||
| Input Capacitance | Ciss | VGS=0V, VDS=1200V, f=100KHz, VAC=25mV | pF | 3815 | |||
| Output Capacitance | Coss | VGS=0V, VDS=1200V, f=100KHz, VAC=25mV | pF | 239 | |||
| Reverse Transfer Capacitance | Crss | VGS=0V, VDS=1200V, f=100KHz, VAC=25mV | pF | 29 | |||
| Diode Forward Voltage | VSD | VGS=-5V, ISD=37.5A, Tvj=25 | V | 4.7 | |||
| Diode Forward Voltage | VSD | VGS=-5V, ISD=37.5A, Tvj=175 | V | 4.1 | |||
| Thermal Resistance: Junction to Case | Rth(J-C) | /W | 0.27 | 0.37 |
Maximum Ratings
| Parameter | Symbol | Condition | Value | Unit |
| Drain-Source Voltage | VDSmax | VGS=0V, ID=100uA | 1200 | V |
| Gate-Source Voltage | VGSmax | Absolute maximum values | -10/+22 | V |
| Gate-Source Voltage | VGSop | Recommended operational values | -5/+18 | V |
| Continuous Drain Current | ID | VGS=18V, TC=25 | 167 | A |
| Continuous Drain Current | ID | VGS=18V, TC=100 | 118 | A |
| Pulsed Drain Current | ID(pulse) | Pulse width tp limited by Tjmax | TBD | A |
| Power Dissipation | PD | TC=25, TJ=175 | 555 | W |
| Operating Junction Temperature | Tvj, op | -55~175 | ||
| Storage Temperature Range | Tstg | -55~175 |
2508191745_HXY-MOSFET-IMZA120R014M1HXKSA1-HXY_C50346532.pdf
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