Fast switching P channel MOSFET HUASHUO HSS2307 20V with excellent RDSON and gate charge performance
Key Attributes
Model Number:
HSS2307
Product Custom Attributes
Drain To Source Voltage:
20V
Current - Continuous Drain(Id):
6A
Operating Temperature -:
-55℃~+150℃
RDS(on):
25mΩ@4.5V,6A
Gate Threshold Voltage (Vgs(th)):
700mV
Type:
P-Channel
Reverse Transfer Capacitance (Crss@Vds):
304pF
Number:
1 P-Channel
Output Capacitance(Coss):
489pF
Input Capacitance(Ciss):
2.1nF
Pd - Power Dissipation:
1.4W
Gate Charge(Qg):
17nC@4.5V
Mfr. Part #:
HSS2307
Package:
SOT-23L
Product Description
Product Overview
The HSS2307 is a P-channel, 20V fast switching MOSFET designed with high cell density trenched technology. It offers excellent RDS(ON) and gate charge, making it suitable for synchronous buck converter applications. This device meets RoHS and Green Product requirements and is available as a green device. It exhibits excellent Cdv/dt effect decline.
Product Attributes
- Brand: HSS
- Product Type: P-Ch MOSFET
- Voltage Rating: 20V
- Switching Speed: Fast
- Certifications: RoHS, Green Product
Technical Specifications
| Symbol | Parameter | Conditions | Min. | Typ. | Max. | Units |
|---|---|---|---|---|---|---|
| Absolute Maximum Ratings | ||||||
| VDS | Drain-Source Voltage | -20 | V | |||
| VGS | Gate-Source Voltage | ±12 | V | |||
| ID@TA=25 | Continuous Drain Current, VGS @ -4.5V1 | -6 | A | |||
| ID@TA=70 | Continuous Drain Current, VGS @ -4.5V1 | -4 | A | |||
| IDM | Pulsed Drain Current2 | -24 | A | |||
| PD@TA=25 | Total Power Dissipation3 | 1.4 | W | |||
| PD@TA=70 | Total Power Dissipation3 | 0.9 | W | |||
| TSTG | Storage Temperature Range | -55 | 150 | |||
| TJ | Operating Junction Temperature Range | -55 | 150 | |||
| Thermal Data | ||||||
| RJA | Thermal Resistance Junction-Ambient1 | 125 | /W | |||
| RJA | Thermal Resistance Junction-Ambient1 (t ≤10s) | 90 | /W | |||
| Electrical Characteristics (TJ=25 , unless otherwise noted) | ||||||
| BVDSS | Drain-Source Breakdown Voltage | VGS=0V , ID=-250uA | -20 | V | ||
| ΔBVDSS/ΔTJ | BVDSS Temperature Coefficient | Reference to 25 , ID=-1mA | -0.014 | V/ | ||
| RDS(ON) | Static Drain-Source On-Resistance2 | VGS=-4.5V , ID=-6A | 20 | 25 | mΩ | |
| VGS=-2.5V , ID=-5A | 25 | 30 | mΩ | |||
| VGS=-1.8V , ID=-3A | 38 | 45 | mΩ | |||
| VGS(th) | Gate Threshold Voltage | VGS=VDS , ID =-250uA | -0.5 | -0.7 | -1.0 | V |
| ΔVGS(th)/ΔTJ | VGS(th) Temperature Coefficient | 3.95 | mV/ | |||
| IDSS | Drain-Source Leakage Current | VDS=-16V , VGS=0V , TJ=25 | -1 | µA | ||
| VDS=-16V , VGS=0V , TJ=55 | -5 | µA | ||||
| IGSS | Gate-Source Leakage Current | VGS=±12V , VDS=0V | ±100 | nA | ||
| gfs | Forward Transconductance | VDS=-5V , ID=-6A | 8 | S | ||
| Qg | Total Gate Charge (-4.5V) | VDS=-10V , VGS=-4.5V , ID=-6A | 17 | nC | ||
| Qgs | Gate-Source Charge | 4.3 | nC | |||
| Qgd | Gate-Drain Charge | 4.3 | nC | |||
| td(on) | Turn-On Delay Time | VDD=-10V , VGS=-4.5V , RG=3.3Ω, ID=-3A | 23 | ns | ||
| tr | Rise Time | 31 | ns | |||
| td(off) | Turn-Off Delay Time | 70 | ns | |||
| tf | Fall Time | 50 | ns | |||
| Ciss | Input Capacitance | VDS=-10V , VGS=0V , f=1MHz | 2100 | pF | ||
| Coss | Output Capacitance | 489 | pF | |||
| Crss | Reverse Transfer Capacitance | 304 | pF | |||
| Diode Characteristics | ||||||
| IS | Continuous Source Current1,4 | VG=VD=0V , Force Current | -6 | A | ||
| ISM | Pulsed Source Current2,4 | -24 | A | |||
| VSD | Diode Forward Voltage2 | VGS=0V , IS=-1A , TJ=25 | -1.2 | V | ||
| Ordering Information | ||||||
| Part Number | Package code | Packaging | ||||
| HSS2307 | SOT-23L | 3000/Tape&Reel | ||||
Notes:
1 The data tested by surface mounted on a 1 inch2 FR-4 board with 2OZ copper.
2 The data tested by pulsed, pulse width ≤ 300µs, duty cycle ≤ 2%.
3 The power dissipation is limited by 150 junction temperature.
4 The data is theoretically the same as ID and IDM, in real applications, should be limited by total power dissipation.
2410121532_HUASHUO-HSS2307_C845591.pdf
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