Power Switching MOSFET HXY MOSFET AO4882 HXY Featuring Dual N Channel and Low Gate Voltage Operation
Key Attributes
Model Number:
AO4882-HXY
Product Custom Attributes
Configuration:
-
Drain To Source Voltage:
40V
Current - Continuous Drain(Id):
8A
Operating Temperature -:
-55℃~+150℃
RDS(on):
20mΩ@10V,7A
Gate Threshold Voltage (Vgs(th)):
2.5V
Reverse Transfer Capacitance (Crss@Vds):
76pF@15V
Number:
2 N-Channel
Pd - Power Dissipation:
1.9W
Input Capacitance(Ciss):
1.013nF@15V
Gate Charge(Qg):
9.8nC@4.5V
Mfr. Part #:
AO4882-HXY
Package:
SOP-8
Product Description
Product Overview
The AO4882-HXY is a Dual N-Channel Enhancement Mode MOSFET from HUAXUANYANG ELECTRONICS CO.,LTD. It offers excellent RDS(ON), low gate charge, and operation with gate voltages as low as 2.5V, making it suitable for battery protection and other switching applications. This device utilizes advanced trench technology.
Product Attributes
- Brand: HUAXUANYANG ELECTRONICS CO.,LTD
- Product ID: AO4882-HXY
- Website: www.hxymos.com
- Origin: Shenzhen
Technical Specifications
| Symbol | Parameter | Conditions | Min. | Typ. | Max. | Units |
| Absolute Maximum Ratings@Tj=25(unless otherwise specified) | ||||||
| VDS | Drain-Source Voltage | 40 | V | |||
| VGS | Gate-Source Voltage | 20 | V | |||
| ID@TA=25 | Drain Current, VGS @ 4.5V | 8 | A | |||
| ID@TA=70 | Drain Current, VGS @ 4.5V | 6 | A | |||
| IDM | Pulsed Drain Current | 36 | A | |||
| PD@TA=25 | Total Power Dissipation | 1.9 | W | |||
| TSTG | Storage Temperature Range | -55 | 150 | |||
| TJ | Operating Junction Temperature Range | -55 | 150 | |||
| Rthj-a | Maximum Thermal Resistance, Junction- ambient | (SOIC-8) | 40 | /W | ||
| Electrical Characteristics (TJ=25 , unless otherwise noted) | ||||||
| BVDSS | Drain-Source Breakdown Voltage | VGS=0V , ID=250uA | 40 | V | ||
| BVDSS/T | BVDSS Temperature Coefficient | Reference to 25 , ID=1mA | 0.032 | V/ | ||
| RDS(ON) | Static Drain-Source On-Resistance | VGS=10V , ID=7A | 16 | 20 | m | |
| VGS=4.5V , ID=6A | 20 | 26 | m | |||
| VGS(th) | Gate Threshold Voltage | VGS=VDS , ID =250uA | 1.2 | 1.6 | 2.5 | V |
| VGS(th) | VGS(th) Temperature Coefficient | -4.8 | mV/ | |||
| IDSS | Drain-Source Leakage Current | VDS=32V , VGS=0V , TJ=25 | 1 | uA | ||
| VDS=32V , VGS=0V , TJ=55 | 5 | uA | ||||
| IGSS | Gate-Source Leakage Current | VGS=20V , VDS=0V | 100 | nA | ||
| gfs | Forward Transconductance | VDS=5V , ID=7A | 32 | S | ||
| Rg | Gate Resistance | VDS=0V , VGS=0V , f=1MHz | 2.1 | |||
| Qg | Total Gate Charge | VDS=32V , VGS=4.5V , ID=7A | 9.8 | nC | ||
| Qgs | Gate-Source Charge | 2.8 | nC | |||
| Qgd | Gate-Drain Charge | 3.9 | nC | |||
| Td(on) | Turn-On Delay Time | VDD=20V , VGS=10V , RG=3.3 ID=7A | 2.8 | ns | ||
| Tr | Rise Time | 40.4 | ns | |||
| Td(off) | Turn-Off Delay Time | 22.8 | ns | |||
| Tf | Fall Time | 6.4 | ns | |||
| Ciss | Input Capacitance | VDS=15V , VGS=0V , f=1MHz | 1013 | pF | ||
| Coss | Output Capacitance | 107 | pF | |||
| Crss | Reverse Transfer Capacitance | 76 | pF | |||
| Diode Characteristics | ||||||
| IS | Continuous Source Current | VG=VD=0V , Force Current | 8 | A | ||
| ISM | Pulsed Source Current | 36 | A | |||
| VSD | Diode Forward Voltage | VGS=0V , IS=1A , TJ=25 | 1 | V | ||
| trr | Reverse Recovery Time | IF=7A , dI/dt=100A/s , TJ=25 | 10 | ns | ||
| Qrr | Reverse Recovery Charge | 3.3 | nC | |||
2509181602_HXY-MOSFET-AO4882-HXY_C5148657.pdf
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