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quality P Channel Enhancement Mode MOSFET HUAYI HYG200P10LR1B with 100V Drain Source Voltage and Low On Resistance factory
quality P Channel Enhancement Mode MOSFET HUAYI HYG200P10LR1B with 100V Drain Source Voltage and Low On Resistance factory

P Channel Enhancement Mode MOSFET HUAYI HYG200P10LR1B with 100V Drain Source Voltage and Low On Resistance

Key Attributes
Model Number: HYG200P10LR1B
Product Custom Attributes
Drain To Source Voltage:
100V
Current - Continuous Drain(Id):
80A
RDS(on):
32mΩ@4.5V
Gate Threshold Voltage (Vgs(th)):
3V@250uA
Type:
P-Channel
Reverse Transfer Capacitance (Crss@Vds):
91pF
Number:
1 P-Channel
Output Capacitance(Coss):
278pF
Pd - Power Dissipation:
214W
Gate Charge(Qg):
181nC@10V
Mfr. Part #:
HYG200P10LR1B
Package:
TO-263-2L
Product Description

Product Overview

The HYG200P10LR1P/B is a P-Channel Enhancement Mode MOSFET from Hymexa, designed for high-performance applications. It features a -100V drain-source voltage and -80A continuous drain current, with low on-resistance of 20m (typ.) at VGS = -10V. This MOSFET is 100% avalanche tested, reliable, and rugged, with lead-free and green device options available (RoHS compliant). It is ideal for portable equipment, battery-powered systems, and DC-DC converters.

Product Attributes

  • Brand: Hymexa
  • Origin: China (Huayi Microelectronics Co., Ltd.)
  • Material: Lead Free and Green Devices Available (RoHS Compliant)
  • Certifications: RoHS Compliant, IPC/JEDEC J-STD-020 compliant

Technical Specifications

ParameterSymbolTest ConditionsUnitMinTyp.Max
Absolute Maximum Ratings
Drain-Source VoltageVDSSTc=25C Unless Otherwise NotedV-100--
Gate-Source VoltageVGSSV-20-
Maximum Junction TemperatureTJC--175
Storage Temperature RangeTSTGC-55-175
Source Current-Continuous(Body Diode)ISTc=25C, Mounted on Large Heat SinkA--80-
Pulsed Drain CurrentIDMTc=25CA--230-
Continuous Drain CurrentIDTc=25CA--80-
Continuous Drain CurrentIDTc=100CA--56.6-
Maximum Power DissipationPDTc=25CW-214-
Maximum Power DissipationPDTc=100CW-107-
Thermal Resistance, Junction-to-CaseRJCC/W-0.7-
Thermal Resistance, Junction-to-AmbientRJASurface mounted on 1in FR-4 boardC/W-62.5-
Single Pulsed-Avalanche EnergyEASL=0.3mH, Limited by TJmax, starting TJ=25C, VD=-80V, VGS = -10VmJ-308-
Electrical Characteristics
Drain-Source Breakdown VoltageBVDSSVGS=0V,IDS= -250AV-100--
Drain-to-Source Leakage CurrentIDSSVDS= -100V,VGS=0VA---1
Drain-to-Source Leakage CurrentIDSSTJ=125C, VDS= -100V,VGS=0VA---50
Gate Threshold VoltageVGS(th)VDS=VGS, IDS= -250AV-1-1.8-3
Gate-Source Leakage CurrentIGSSVGS=20V,VDS=0VnA--100
Drain-Source On-State ResistanceRDS(ON)VGS= -10V,IDS= -40Am-2028
Drain-Source On-State ResistanceRDS(ON)VGS= -4.5V,IDS=-40Am-2432
Diode Forward VoltageVSD*ISD= -40A,VGS=0VV--0.86-1.3
Reverse Recovery TimetrrISD=-40A,dISD/dt=100A/sns-32-
Reverse Recovery ChargeQrrISD=-40A,dISD/dt=100A/snC-45-
Gate ResistanceRGVGS=0V,VDS=0V,F=1MHz-4.7-
Input CapacitanceCissVGS=0V, VDS= -50V, Frequency=1.0MHzpF-11520-
Output CapacitanceCossVGS=0V, VDS= -50V, Frequency=1.0MHzpF-278-
Reverse Transfer CapacitanceCrssVGS=0V, VDS= -50V, Frequency=1.0MHzpF-91-
Turn-on Delay Timetd(ON)VDD= -50V,RG=4, IDS= -40A,VGS= -10Vns-15.9-
Turn-on Rise TimeTrVDD= -50V,RG=4, IDS= -40A,VGS= -10Vns-90-
Turn-off Delay Timetd(OFF)VDD= -50V,RG=4, IDS= -40A,VGS= -10Vns-209-
Turn-off Fall TimeTfVDD= -50V,RG=4, IDS= -40A,VGS= -10Vns-104-
Total Gate ChargeQg-10VVDS = -50V, VGS= -10V, ID= -20AnC-181-
Total Gate ChargeQg-4.5VVDS = -50V, VGS= -4.5V, ID= -20AnC-83-
Gate-Source ChargeQgsVDS = -50V, VGS= -10V, ID= -20AnC-43-
Gate-Drain ChargeQgdVDS = -50V, VGS= -10V, ID= -20AnC-27-
Ordering and Marking Information
Package CodePTO-220FB-3L
Package CodeBTO-263-2L
MarkingG200P10
Lot CodeXYMXXXXXX

Note: *Pulse test, pulse width 300us, duty cycle 2%.


2409302203_HUAYI-HYG200P10LR1B_C3148162.pdf

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