Power Switching MOSFET HUAYI HYG028N10NS1B N Channel Enhancement Mode with 100V and 230A Specifications
Key Attributes
Model Number:
HYG028N10NS1B
Product Custom Attributes
Drain To Source Voltage:
100V
Current - Continuous Drain(Id):
230A
Operating Temperature -:
-55℃~+175℃@(Tj)
RDS(on):
3.3mΩ@10V
Gate Threshold Voltage (Vgs(th)):
4V@250uA
Type:
N-Channel
Reverse Transfer Capacitance (Crss@Vds):
242pF
Number:
1 N-channel
Output Capacitance(Coss):
3.454nF
Input Capacitance(Ciss):
10.32nF
Pd - Power Dissipation:
300W
Gate Charge(Qg):
176nC@10V
Mfr. Part #:
HYG028N10NS1B
Package:
TO-263-2L
Product Description
Product Overview
The HYG028N10NS1P/B is a high-performance N-Channel Enhancement Mode MOSFET from Hymexa, designed for power switching applications. It features a 100V/230A rating with a low on-resistance of 2.6m (typ.) at VGS = 10V. This device is 100% avalanche tested, ensuring reliability and ruggedness. Lead-free and green (RoHS compliant) options are available.
Product Attributes
- Brand: Hymexa
- Product Line: HYG028N10NS1P/B
- Certifications: RoHS Compliant, Lead-Free, Green Devices Available
Technical Specifications
| Parameter | Test Conditions | Min | Typ. | Max | Unit |
|---|---|---|---|---|---|
| Absolute Maximum Ratings | |||||
| Drain-Source Voltage (VDSS) | 100 | V | |||
| Gate-Source Voltage (VGSS) | 20 | V | |||
| Maximum Junction Temperature (TJ) | -55 | 175 | C | ||
| Storage Temperature Range (TSTG) | -55 | 175 | C | ||
| Source Current-Continuous (Body Diode) (IS) | Tc=25C, Mounted on Large Heat Sink | 230 | A | ||
| Pulsed Drain Current (IDM) | Tc=25C | 610 | A | ||
| Continuous Drain Current (ID) | Tc=25C | 230 | A | ||
| Continuous Drain Current (ID) | Tc=100C | 162 | A | ||
| Maximum Power Dissipation (PD) | Tc=25C | 300 | W | ||
| Maximum Power Dissipation (PD) | Tc=100C | 150 | W | ||
| Thermal Resistance, Junction-to-Case (RJC) | 0.5 | C/W | |||
| Thermal Resistance, Junction-to-Ambient (RJA) | Surface mounted on FR-4 board | 62 | C/W | ||
| Single Pulsed-Avalanche Energy (EAS) | L=0.3mH | 980.7 | mJ | ||
| Electrical Characteristics | |||||
| Drain-Source Breakdown Voltage (BVDSS) | VGS=0V, IDS=250A | 100 | - | - | V |
| Drain-to-Source Leakage Current (IDSS) | VDS=100V,VGS=0V | - | - | 1.0 | A |
| Drain-to-Source Leakage Current (IDSS) | TJ=125C | - | - | 50 | A |
| Gate Threshold Voltage (VGS(th)) | VDS=VGS, IDS=250A | 2 | 3 | 4 | V |
| Gate-Source Leakage Current (IGSS) | VGS=20V,VDS=0V | - | - | 100 | nA |
| Drain-Source On-State Resistance (RDS(ON)) | VGS=10V,IDS=50A | - | 2.6 | 3.3 | m |
| Diode Forward Voltage (VSD) | ISD=50A,VGS=0V | - | 0.86 | 1.3 | V |
| Reverse Recovery Time (trr) | ISD=50A,dISD/dt=100A/s | - | 86.5 | - | ns |
| Reverse Recovery Charge (Qrr) | - | 208.8 | - | nC | |
| Gate Resistance (RG) | VGS=0V,VDS=0V,F=1MHz | - | 2.8 | - | |
| Input Capacitance (Ciss) | VGS=0V, VDS=25V, Frequency=1.0MHz | - | 10320 | - | pF |
| Output Capacitance (Coss) | - | 3454 | - | pF | |
| Reverse Transfer Capacitance (Crss) | - | 242 | - | pF | |
| Turn-on Delay Time (td(ON)) | VDD=50V,RG=2.5, IDS=50A,VGS=10V | - | 27.3 | - | ns |
| Turn-on Rise Time (Tr) | - | 103.7 | - | ns | |
| Turn-off Delay Time (td(OFF)) | - | 92.8 | - | ns | |
| Turn-off Fall Time (Tf) | - | 100.8 | - | ns | |
| Total Gate Charge (Qg) | VDS=80V, VGS=10V ID=50A | - | 176 | - | nC |
| Gate-Source Charge (Qgs) | - | 56 | - | ||
| Gate-Drain Charge (Qgd) | - | 48 | - | ||
2409302203_HUAYI-HYG028N10NS1B_C2886382.pdf
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