power MOSFET HUASHUO HSK6008 with low static drain source resistance and fast switching capability
Key Attributes
Model Number:
HSK6008
Product Custom Attributes
Drain To Source Voltage:
60V
Current - Continuous Drain(Id):
3.2A
Operating Temperature -:
-55℃~+150℃
RDS(on):
80mΩ@10V,2.5A
Gate Threshold Voltage (Vgs(th)):
1.2V
Reverse Transfer Capacitance (Crss@Vds):
35pF@15V
Number:
1 N-channel
Pd - Power Dissipation:
1.5W
Input Capacitance(Ciss):
715pF@15V
Gate Charge(Qg):
7nC@4.5V
Mfr. Part #:
HSK6008
Package:
SOT-89
Product Description
Product Overview
The HSK6008 is a high cell density trenched N-channel MOSFET designed for excellent RDS(ON) and efficiency in small power switching and load switch applications. This fast-switching MOSFET meets RoHS and Green Product requirements and offers features such as super low gate charge and excellent CdV/dt effect decline, making it suitable for various power management solutions.
Product Attributes
- Brand: HS-Semi
- Product Type: N-Channel MOSFET
- Certifications: RoHS, Green Product
- Technology: Advanced high cell density Trench technology
Technical Specifications
| Model | Parameter | Conditions | Min. | Typ. | Max. | Units |
|---|---|---|---|---|---|---|
| HSK6008 | Drain-Source Breakdown Voltage (BVDSS) | VGS=0V , ID=250uA | 60 | --- | --- | V |
| BVDSS Temperature Coefficient | Reference to 25 , ID=1mA | --- | 0.054 | --- | V/ | |
| Static Drain-Source On-Resistance (RDS(ON)) | VGS=10V , ID=2.5A | --- | 80 | 100 | m | |
| Static Drain-Source On-Resistance (RDS(ON)) | VGS=4.5V , ID=2A | --- | 85 | 110 | m | |
| Gate Threshold Voltage (VGS(th)) | VGS=VDS , ID =250uA | 1.2 | --- | 2.5 | V | |
| VGS(th) Temperature Coefficient | --- | -4.96 | --- | mV/ | ||
| Drain-Source Leakage Current (IDSS) | VDS=48V , VGS=0V , TJ=25 | --- | --- | 1 | uA | |
| Drain-Source Leakage Current (IDSS) | VDS=48V , VGS=0V , TJ=55 | --- | --- | 5 | uA | |
| Gate-Source Leakage Current (IGSS) | VGS=20V , VDS=0V | --- | --- | 100 | nA | |
| Forward Transconductance (gfs) | VDS=5V , ID=2A | --- | 13 | --- | S | |
| Total Gate Charge (Qg) (4.5V) | VDS=48V , VGS=4.5V , ID=2A | --- | 5 | 7.0 | nC | |
| Gate-Source Charge (Qgs) | --- | 1.68 | 2.4 | nC | ||
| Gate-Drain Charge (Qgd) | --- | 1.9 | 2.7 | nC | ||
| Turn-On Delay Time (Td(on)) | VDD=30V , VGS=10V , RG=3.3, ID=2A | --- | 1.6 | 3.2 | ns | |
| Diode Characteristics | Continuous Source Current (IS) | VG=VD=0V , Force Current | --- | --- | 3.2 | A |
| Diode Forward Voltage (VSD) | VGS=0V , IS=1A , TJ=25 | --- | --- | 1.2 | V | |
| Thermal Data | Thermal Resistance Junction-Ambient (RJA) | --- | --- | 85 | /W | |
| Thermal Resistance Junction-Case (RJC) | --- | --- | 48 | /W | ||
| Absolute Maximum Ratings | Drain-Source Voltage (VDS) | --- | --- | 60 | V | |
| Gate-Source Voltage (VGS) | --- | --- | 20 | V | ||
| Continuous Drain Current (ID@TA=25) | VGS @ 10V | --- | --- | 3.2 | A | |
| Continuous Drain Current (ID@TA=70) | VGS @ 10V | --- | --- | 2.3 | A | |
| Pulsed Drain Current (IDM) | --- | --- | 12 | A | ||
| Power Dissipation | Total Power Dissipation (PD@TA=25) | --- | --- | 1.5 | W | |
| Operating Junction Temperature Range (TJ) | -55 | --- | 150 | |||
| Storage Temperature Range (TSTG) | -55 | --- | 150 |
| Package Code | Packaging | Quantity |
|---|---|---|
| SOT-89 | Tape&Reel | 4000 |
2410121447_HUASHUO-HSK6008_C5128194.pdf
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