Single P Channel MOSFET HYG045P03LQ1C2 Suitable for DC DC Converters and Switching Applications
Key Attributes
Model Number:
HYG045P03LQ1C2
Product Custom Attributes
Drain To Source Voltage:
30V
Current - Continuous Drain(Id):
80A
Operating Temperature -:
-55℃~+175℃
RDS(on):
6.2mΩ@4.5V,20A
Gate Threshold Voltage (Vgs(th)):
3V@250uA
Type:
P-Channel
Reverse Transfer Capacitance (Crss@Vds):
575pF
Number:
1 P-Channel
Output Capacitance(Coss):
649pF
Input Capacitance(Ciss):
7.66nF
Pd - Power Dissipation:
62.5W
Gate Charge(Qg):
131.3nC@10V
Mfr. Part #:
HYG045P03LQ1C2
Package:
PPAK-8(5x6)
Product Description
HYG045P03LQ1C2 Single P-Channel MOSFET
The HYG045P03LQ1C2 is a single P-Channel enhancement mode MOSFET designed for switching applications and power management in DC/DC converters. It features a low on-resistance of 3.8 m (typ.) at VGS = -10V and 6.2 m (typ.) at VGS = -4.5V, 100% avalanche tested, and a reliable, rugged design. Halogen-free devices are available.
Product Attributes
- Brand: Hymexa
- Product Code: HYG045P03LQ1C2
- Package: PPAK5*6-8L
- Certifications: RoHS compliant, Halogen-free
Technical Specifications
| Parameter | Symbol | Conditions | Min | Typ. | Max | Unit |
|---|---|---|---|---|---|---|
| Absolute Maximum Ratings | ||||||
| Drain-Source Voltage | VDSS | Tc=25C Unless Otherwise Noted | -30 | V | ||
| Gate-Source Voltage | VGSS | 20 | V | |||
| Maximum Junction Temperature | TJ | -55 | 175 | C | ||
| Storage Temperature Range | TSTG | -55 | 175 | C | ||
| Source Current-Continuous (Body Diode) | IS | Tc=25C | -80 | A | ||
| Pulsed Drain Current | IDM | Tc=25C * | -320 | A | ||
| Continuous Drain Current | ID | Tc=25C | A | |||
| Continuous Drain Current | ID | Tc=100C | A | |||
| Maximum Power Dissipation | PD | Tc=25C | 62.5 | W | ||
| Maximum Power Dissipation | PD | Tc=100C | 31.2 | W | ||
| Thermal Resistance, Junction-to-Case | RJC | 2.4 | C/W | |||
| Thermal Resistance, Junction-to-Ambient | RJA | ** | 45 | C/W | ||
| Single Pulsed Avalanche Energy | EAS | *** L=0.1mH | 378.5 | mJ | ||
| Electrical Characteristics | ||||||
| Drain-Source Breakdown Voltage | BVDSS | VGS=0V, IDS=-250A | -30 | V | ||
| Drain-to-Source Leakage Current | IDSS | VDS=-30V,VGS=0V | -1 | A | ||
| Drain-to-Source Leakage Current | IDSS | TJ=125C | -50 | A | ||
| Gate Threshold Voltage | VGS(th) | VDS=VGS, IDS=-250A | -1 | -1.6 | -3 | V |
| Gate-Source Leakage Current | IGSS | VGS=20V,VDS=0V | 100 | nA | ||
| Drain-Source On-State Resistance | RDS(ON) | VGS=-10V,IDS=-20A * | 3.8 | 5.0 | m | |
| Drain-Source On-State Resistance | RDS(ON) | VGS=-4.5V,IDS=-20A * | 6.2 | 8.5 | m | |
| Diode Forward Voltage | VSD | ISD=-20A,VGS=0V * | -0.82 | -1.2 | V | |
| Reverse Recovery Time | trr | ISD=-20A,dISD/dt=100A/s | 22 | ns | ||
| Reverse Recovery Charge | Qrr | 13.5 | nC | |||
| Dynamic Characteristics | ||||||
| Gate Resistance | RG | VGS=0V,VDS=0V, Frequency=1.0MHz | 5.2 | |||
| Input Capacitance | Ciss | VGS=0V, VDS=-25V, Frequency=1.0MHz | 7660 | pF | ||
| Output Capacitance | Coss | 649 | pF | |||
| Reverse Transfer Capacitance | Crss | 575 | pF | |||
| Turn-on Delay Time | td(ON) | VDD=-15V,RG=4, IDS=-20A,VGS=-10V | 14.6 | ns | ||
| Turn-on Rise Time | Tr | 68.8 | ns | |||
| Turn-off Delay Time | td(OFF) | 162.9 | ns | |||
| Turn-off Fall Time | Tf | 95 | ns | |||
| Gate Charge Characteristics | ||||||
| Total Gate Charge | Qg | Vgs=-10V, VDS =-15V,ID=-10A | 131.3 | nC | ||
| Total Gate Charge | Qg | Vgs=-4.5V | 63.6 | nC | ||
| Gate-Source Charge | Qgs | 29.5 | nC | |||
| Gate-Drain Charge | Qgd | 19.1 | nC | |||
2410121653_HUAYI-HYG045P03LQ1C2_C2932576.pdf
Related Products
NPN General Purpose Amplifier YANGJIE MMBT2222AT SOT523 Package RoHS Compliant Electronic Component
Product OverviewThe MMBT2222AT is an NPN General Purpose Amplifier in a SOT-523 surface mount package, ideally suited for automatic insertion. It offers a moisture sensitivity level of 1 and meets UL-94 V-0 flammability rating, being halogen-free. This component is designed for general-purpose ...
N channel Power MOSFET XTX BRT40N210P2 with 840A Pulsed Drain Current and Enhanced Trench Technology
Product OverviewThe BRT40N210P2 is an N-channel Enhancement Mode Power MOSFET from XTX Technology Inc. It features advanced trench technology, offering excellent RDS(ON) and low gate charge. This MOSFET is suitable for load switch, PWM applications, and power management scenarios.Product AttributesB...
Dual NPN Transistor XZT MMDT3904 in SOT-363 Package Designed for Amplification and Switching Tasks
Product OverviewThe MMDT3904 is a dual NPN transistor in a SOT-363 package. It is constructed using an epitaxial planar die and is ideal for low power amplification and switching applications.Product AttributesBrand: X T ELECTRONICSModel: MMDT3904Package: SOT-363Type: Dual Transistor (NPN+NPN...
Digital Transistor YANGJIE UMH11N Dual NPN Type with Built In Bias Resistors and Surface Mount Design
Product OverviewThe UMH11N is a dual NPN digital transistor featuring built-in bias resistors, allowing for inverter circuit configuration without external input resistors. It is designed for surface mount applications and is ideally suited for automatic insertion. The epoxy meets UL-94 V-0 ...
Contact Our Experts And Get A Free Consultation!
Our mission is to offer "High Quality" & "Good Service" & "Fast Delivery" to help our clients to gain more profits.
