High current 80A mosfet HUAYI HY1707P with 6 milliohm on resistance and RoHS compliant construction

Key Attributes
Model Number: HY1707P
Product Custom Attributes
Drain To Source Voltage:
70V
Current - Continuous Drain(Id):
80A
Operating Temperature -:
-55℃~+175℃
RDS(on):
7mΩ@10V
Gate Threshold Voltage (Vgs(th)):
4V@250uA
Type:
N-Channel
Reverse Transfer Capacitance (Crss@Vds):
280pF
Number:
1 N-channel
Output Capacitance(Coss):
900pF
Pd - Power Dissipation:
178W
Input Capacitance(Ciss):
4.55nF
Gate Charge(Qg):
88nC@10V
Mfr. Part #:
HY1707P
Package:
TO-220FB
Product Description

Product Overview

The HY1707 is an N-Channel Enhancement Mode MOSFET designed for power management in inverter systems. It offers high performance with a voltage rating of 70V and a continuous drain current of 80A, featuring a low on-state resistance of 6m (typ.) at VGS=10V. This device is avalanche rated, reliable, and rugged, with lead-free and green device options available (RoHS compliant).

Product Attributes

  • Brand: HY (Hymex)
  • Certifications: RoHS Compliant, Lead Free, Green Devices Available
  • Assembly Material: Molding compounds, die attach material, and tin plate
  • Termination Finish: Compliant with RoHS

Technical Specifications

ModelVDSS (V)ID (A)RDS(ON) (m)Package Type
HY1707P/M/B/I/MF/PS/PM70806 (typ. @ VGS=10V)TO-3PM, TO-3PS-3L, TO-220MF-3L, TO-262-3L, TO-263-2L, TO-220FB-3M, TO-220FB-3L

Absolute Maximum Ratings (TC=25C Unless Otherwise Noted)

SymbolParameterRatingUnit
VDSSDrain-Source Voltage70V
VGSSGate-Source Voltage25V
TJMaximum Junction Temperature175C
TSTGStorage Temperature Range-55 to 175C
ISDiode Continuous Forward Current (TC=25C, Mounted on Large Heat Sink)80A
IDContinuous Drain Current (TC=25C)280A
IDContinuous Drain Current (TC=100C)90A
PDMaximum Power Dissipation (TC=25C)4550W
PDMaximum Power Dissipation (TC=100C)88W
RJCThermal Resistance-Junction to Case0.84C/W
RJAThermal Resistance-Junction to Ambient62.5C/W
EASDrain-Source Avalanche Energy (L=0.3mH)650mJ

Electrical Characteristics (TC = 25C Unless Otherwise Noted)

SymbolParameterTest ConditionsMin.Typ.Max.Unit
BVDSSDrain-Source Breakdown VoltageVGS=0V, IDS=250A70--V
IDSSZero Gate Voltage Drain CurrentVDS=70V, VGS=0V--1A
IDSSZero Gate Voltage Drain Current (TJ=85C)VDS=70V, VGS=0V--10A
VGS(th)Gate Threshold VoltageVDS=VGS, IDS=250A234V
IGSSGate Leakage CurrentVGS=25V, VDS=0V--100nA
RDS(ON)Drain-Source On-state ResistanceVGS=10V, IDS=40A-6-m

Diode Characteristics

SymbolParameterTest ConditionsMin.Typ.Max.Unit
VSDDiode Forward VoltageISD=40A, VGS=0V-0.8-V
trrReverse Recovery TimeISD=40A, dlSD/dt=100A/s-55-ns
QrrReverse Recovery ChargeISD=40A, dlSD/dt=100A/s-100-nC

Dynamic Characteristics (TC = 25C Unless Otherwise Noted)

SymbolParameterTest ConditionsMin.Typ.Max.Unit
RGGate ResistanceVGS=0V,VDS=0V,F=1MHz-0.9-
CissInput CapacitanceVGS=0V, VDS=25V, Frequency=1.0MHz-1780-pF
CossOutput Capacitance-178-
CrssReverse Transfer Capacitance-40-

Switching Characteristics (TC = 25C Unless Otherwise Noted)

SymbolParameterTest ConditionsMin.Typ.Max.Unit
td(ON)Turn-on Delay TimeVDD=35V, RG=3, IDS=40A, VGS=10V-2139ns
TrTurn-on Rise Time-1019
td(OFF)Turn-off Delay Time-2548
TfTurn-off Fall Time-3157

Gate Charge Characteristics (TC = 25C Unless Otherwise Noted)

SymbolParameterTest ConditionsMin.Typ.Max.Unit
QgTotal Gate ChargeVDS=55V, VGS=10V, IDS=40A-100-nC
QgsGate-Source Charge-20-
QgdGate-Drain Charge-20-

2409302330_HUAYI-HY1707P_C2894734.pdf

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