High current 80A mosfet HUAYI HY1707P with 6 milliohm on resistance and RoHS compliant construction
Product Overview
The HY1707 is an N-Channel Enhancement Mode MOSFET designed for power management in inverter systems. It offers high performance with a voltage rating of 70V and a continuous drain current of 80A, featuring a low on-state resistance of 6m (typ.) at VGS=10V. This device is avalanche rated, reliable, and rugged, with lead-free and green device options available (RoHS compliant).
Product Attributes
- Brand: HY (Hymex)
- Certifications: RoHS Compliant, Lead Free, Green Devices Available
- Assembly Material: Molding compounds, die attach material, and tin plate
- Termination Finish: Compliant with RoHS
Technical Specifications
| Model | VDSS (V) | ID (A) | RDS(ON) (m) | Package Type |
| HY1707P/M/B/I/MF/PS/PM | 70 | 80 | 6 (typ. @ VGS=10V) | TO-3PM, TO-3PS-3L, TO-220MF-3L, TO-262-3L, TO-263-2L, TO-220FB-3M, TO-220FB-3L |
Absolute Maximum Ratings (TC=25C Unless Otherwise Noted)
| Symbol | Parameter | Rating | Unit |
| VDSS | Drain-Source Voltage | 70 | V |
| VGSS | Gate-Source Voltage | 25 | V |
| TJ | Maximum Junction Temperature | 175 | C |
| TSTG | Storage Temperature Range | -55 to 175 | C |
| IS | Diode Continuous Forward Current (TC=25C, Mounted on Large Heat Sink) | 80 | A |
| ID | Continuous Drain Current (TC=25C) | 280 | A |
| ID | Continuous Drain Current (TC=100C) | 90 | A |
| PD | Maximum Power Dissipation (TC=25C) | 4550 | W |
| PD | Maximum Power Dissipation (TC=100C) | 88 | W |
| RJC | Thermal Resistance-Junction to Case | 0.84 | C/W |
| RJA | Thermal Resistance-Junction to Ambient | 62.5 | C/W |
| EAS | Drain-Source Avalanche Energy (L=0.3mH) | 650 | mJ |
Electrical Characteristics (TC = 25C Unless Otherwise Noted)
| Symbol | Parameter | Test Conditions | Min. | Typ. | Max. | Unit |
| BVDSS | Drain-Source Breakdown Voltage | VGS=0V, IDS=250A | 70 | - | - | V |
| IDSS | Zero Gate Voltage Drain Current | VDS=70V, VGS=0V | - | - | 1 | A |
| IDSS | Zero Gate Voltage Drain Current (TJ=85C) | VDS=70V, VGS=0V | - | - | 10 | A |
| VGS(th) | Gate Threshold Voltage | VDS=VGS, IDS=250A | 2 | 3 | 4 | V |
| IGSS | Gate Leakage Current | VGS=25V, VDS=0V | - | - | 100 | nA |
| RDS(ON) | Drain-Source On-state Resistance | VGS=10V, IDS=40A | - | 6 | - | m |
Diode Characteristics
| Symbol | Parameter | Test Conditions | Min. | Typ. | Max. | Unit |
| VSD | Diode Forward Voltage | ISD=40A, VGS=0V | - | 0.8 | - | V |
| trr | Reverse Recovery Time | ISD=40A, dlSD/dt=100A/s | - | 55 | - | ns |
| Qrr | Reverse Recovery Charge | ISD=40A, dlSD/dt=100A/s | - | 100 | - | nC |
Dynamic Characteristics (TC = 25C Unless Otherwise Noted)
| Symbol | Parameter | Test Conditions | Min. | Typ. | Max. | Unit |
| RG | Gate Resistance | VGS=0V,VDS=0V,F=1MHz | - | 0.9 | - | |
| Ciss | Input Capacitance | VGS=0V, VDS=25V, Frequency=1.0MHz | - | 1780 | - | pF |
| Coss | Output Capacitance | - | 178 | - | ||
| Crss | Reverse Transfer Capacitance | - | 40 | - |
Switching Characteristics (TC = 25C Unless Otherwise Noted)
| Symbol | Parameter | Test Conditions | Min. | Typ. | Max. | Unit |
| td(ON) | Turn-on Delay Time | VDD=35V, RG=3, IDS=40A, VGS=10V | - | 21 | 39 | ns |
| Tr | Turn-on Rise Time | - | 10 | 19 | ||
| td(OFF) | Turn-off Delay Time | - | 25 | 48 | ||
| Tf | Turn-off Fall Time | - | 31 | 57 |
Gate Charge Characteristics (TC = 25C Unless Otherwise Noted)
| Symbol | Parameter | Test Conditions | Min. | Typ. | Max. | Unit |
| Qg | Total Gate Charge | VDS=55V, VGS=10V, IDS=40A | - | 100 | - | nC |
| Qgs | Gate-Source Charge | - | 20 | - | ||
| Qgd | Gate-Drain Charge | - | 20 | - |
2409302330_HUAYI-HY1707P_C2894734.pdf
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