Power MOSFET HUAYI HYG009N04LS1C2 designed for switching and power management in electronic circuits
Key Attributes
Model Number:
HYG009N04LS1C2
Product Custom Attributes
Configuration:
-
Drain To Source Voltage:
40V
Current - Continuous Drain(Id):
200A
Operating Temperature -:
-55℃~+175℃
RDS(on):
1.4mΩ@4.5V
Gate Threshold Voltage (Vgs(th)):
3V@250uA
Type:
N-Channel
Reverse Transfer Capacitance (Crss@Vds):
58pF
Number:
1 N-channel
Output Capacitance(Coss):
1.278nF
Input Capacitance(Ciss):
5.876nF
Pd - Power Dissipation:
75W
Gate Charge(Qg):
89nC@10V
Mfr. Part #:
HYG009N04LS1C2
Package:
PDFN5x6-8L
Product Description
Product Overview
The HYG009N04LS1C2 is a single N-Channel Enhancement Mode MOSFET from Hymexa, designed for switching applications and power management in DC/DC converters. It features low on-state resistance (RDS(ON) = 0.75m typ. @VGS = 10V), 100% avalanche tested, and a reliable, rugged design. Halogen-free options are available.
Product Attributes
- Brand: Hymexa
- Origin: China (Huayi Microelectronics Co., Ltd.)
- Certifications: RoHS compliant, Halogen-free
Technical Specifications
| Parameter | Symbol | Test Conditions | Min | Typ. | Max | Unit |
| Absolute Maximum Ratings | ||||||
| Drain-Source Voltage | VDSS | Tc=25C Unless Otherwise Noted | - | - | 40 | V |
| Gate-Source Voltage | VGSS | Tc=25C Unless Otherwise Noted | - | - | ±20 | V |
| Junction Temperature Range | TJ | Tc=25C Unless Otherwise Noted | -55 | - | 175 | °C |
| Storage Temperature Range | TSTG | Tc=25C Unless Otherwise Noted | -55 | - | 175 | °C |
| Source Current-Continuous (Body Diode) | IS | Tc=25°C, Mounted on Large Heat Sink | - | - | 200 | A |
| Pulsed Drain Current | IDM | Tc=25°C | - | - | 800 | A |
| Continuous Drain Current | ID | Tc=25°C | - | - | 200 | A |
| Continuous Drain Current | ID | Tc=100°C | - | - | 141 | A |
| Maximum Power Dissipation | PD | Tc=25°C | - | - | 75 | W |
| Maximum Power Dissipation | PD | Tc=100°C | - | - | 37.5 | W |
| Thermal Resistance, Junction-to-Case | RθJC | - | - | 2 | - | °C/W |
| Thermal Resistance, Junction-to-Ambient | RθJA | Surface mounted on FR-4 board. | - | 45 | - | °C/W |
| Single Pulsed-Avalanche Energy | EAS | L=0.3mH, Limited by TJmax, starting TJ=25°C | - | 780 | - | mJ |
| Electrical Characteristics | ||||||
| Drain-Source Breakdown Voltage | BVDSS | VGS=0V,IDS=250μA | 40 | - | - | V |
| Drain-to-Source Leakage Current | IDSS | VDS=40V,VGS=0V | - | - | 1 | μA |
| Drain-to-Source Leakage Current | IDSS | TJ=125°C | - | - | 50 | μA |
| Gate Threshold Voltage | VGS(th) | VDS=VGS, IDS=250μA | 1.0 | 1.8 | 3.0 | V |
| Gate-Source Leakage Current | IGSS | VGS=±20V,VDS=0V | - | - | ±100 | nA |
| Drain-Source On-State Resistance | RDS(ON) | VGS=10V,IDS=40A | - | 0.75 | 0.96 | mΩ |
| Drain-Source On-State Resistance | RDS(ON) | VGS=4.5V,IDS=40A | - | 1.05 | 1.40 | mΩ |
| Diode Characteristics | ||||||
| Diode Forward Voltage | VSD | ISD=20A,VGS=0V | - | 0.75 | 1.2 | V |
| Reverse Recovery Time | trr | ISD=40A,dISD/dt=100A/μs | - | 45 | - | ns |
| Reverse Recovery Charge | Qrr | - | - | 51 | - | nC |
| Dynamic Characteristics | ||||||
| Gate Resistance | RG | VGS=0V,VDS=0V, Frequency=1.0MHz | - | 1.9 | - | Ω |
| Input Capacitance | Ciss | VGS=0V, VDS=25V, Frequency=1.0MHz | - | 5876 | - | pF |
| Output Capacitance | Coss | VGS=0V, VDS=25V, Frequency=1.0MHz | - | 1278 | - | pF |
| Reverse Transfer Capacitance | Crss | VGS=0V, VDS=25V, Frequency=1.0MHz | - | 58 | - | pF |
| Turn-on Delay Time | td(ON) | VDD=20V,RG=2.5Ω, IDS=40A,VGS=10V | - | 15 | - | ns |
| Turn-on Rise Time | Tr | VDD=20V,RG=2.5Ω, IDS=40A,VGS=10V | - | 98 | - | ns |
| Turn-off Delay Time | td(OFF) | VDD=20V,RG=2.5Ω, IDS=40A,VGS=10V | - | 215 | - | ns |
| Turn-off Fall Time | Tf | VDD=20V,RG=2.5Ω, IDS=40A,VGS=10V | - | 99 | - | ns |
| Gate Charge Characteristics | ||||||
| Total Gate Charge | Qg | VGS=10V, VDS =32V, ID=40A | - | 89 | - | nC |
| Total Gate Charge | Qg | VGS=4.5V, VDS =32V, ID=40A | - | 41 | - | nC |
| Gate-Source Charge | Qgs | VGS=10V, VDS =32V, ID=40A | - | 20 | - | nC |
| Gate-Drain Charge | Qgd | VGS=10V, VDS =32V, ID=40A | - | 14 | - | nC |
2410121306_HUAYI-HYG009N04LS1C2_C2890387.pdf
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