Power Switching N Channel MOSFET HUAYI HYG042N10NS1B Featuring Low On Resistance and High Reliability
Key Attributes
Model Number:
HYG042N10NS1B
Product Custom Attributes
Drain To Source Voltage:
100V
Current - Continuous Drain(Id):
160A
Operating Temperature -:
-55℃~+175℃
RDS(on):
4.2mΩ@10V
Gate Threshold Voltage (Vgs(th)):
4V@250uA
Type:
N-Channel
Reverse Transfer Capacitance (Crss@Vds):
240pF
Number:
1 N-channel
Output Capacitance(Coss):
2.506nF
Input Capacitance(Ciss):
7.04nF
Pd - Power Dissipation:
200W
Gate Charge(Qg):
119nC@10V
Mfr. Part #:
HYG042N10NS1B
Package:
TO-263-2L
Product Description
Product Overview
The HYG042N10NS1/B is an N-Channel Enhancement Mode MOSFET designed for power switching applications, including DC-DC converters. It offers high performance with a 100V/160A rating, low on-resistance (RDS(ON)=3.5m typ. @ VGS = 10V), and is 100% avalanche tested for reliability and ruggedness. Lead-free and green devices are available, complying with RoHS standards.
Product Attributes
- Brand: Hymexa
- Origin: China (Huayi Microelectronics Co., Ltd.)
- Material: Lead-Free and Green Devices Available (RoHS Compliant)
- Certifications: RoHS Compliant, IPC/JEDEC J-STD-020 compliant for MSL classification. "Green" defined as lead-free and halogen-free.
Technical Specifications
| Symbol | Parameter | Test Conditions | Unit | Min | Typ. | Max |
| Absolute Maximum Ratings | ||||||
| VDSS | Drain-Source Voltage | V | 100 | |||
| VGSS | Gate-Source Voltage | V | ±20 | |||
| TJ | Junction Temperature Range | °C | -55 | 175 | ||
| TSTG | Storage Temperature Range | °C | -55 | 175 | ||
| ID | Continuous Drain Current | Tc=25°C | A | 160 | ||
| ID | Continuous Drain Current | Tc=100°C | A | 113 | ||
| IDM | Pulsed Drain Current | Tc=25°C | A | 520 | ||
| PD | Maximum Power Dissipation | Tc=25°C | W | 200 | ||
| PD | Maximum Power Dissipation | Tc=100°C | W | 100 | ||
| RθJC | Thermal Resistance, Junction-to-Case | °C/W | 0.75 | |||
| RθJA | Thermal Resistance, Junction-to-Ambient | °C/W | 62.5 | |||
| EAS | Single Pulsed-Avalanche Energy | L=0.3mH | mJ | 650 | ||
| Electrical Characteristics | ||||||
| BVDSS | Drain-Source Breakdown Voltage | VGS=0V,IDS=250μA | V | 100 | - | - |
| IDSS | Drain-to-Source Leakage Current | VDS=100V,VGS=0V | μA | 1.0 | ||
| IDSS | Drain-to-Source Leakage Current | TJ=125°C | μA | 50 | ||
| VGS(th) | Gate Threshold Voltage | VDS=VGS, IDS=250μA | V | 2 | 3 | 4 |
| IGSS | Gate-Source Leakage Current | VGS=±20V,VDS=0V | nA | ±100 | ||
| RDS(ON) | Drain-Source On-State Resistance | VGS=10V,IDS=50A | mΩ | 3.5 | 4.2 | |
| VSD | Diode Forward Voltage | ISD=50A,VGS=0V | V | 0.88 | 1.2 | |
| trr | Reverse Recovery Time | ISD=50A,dISD/dt=100A/μs | ns | 70 | - | |
| Qrr | Reverse Recovery Charge | nC | 146 | - | ||
| RG | Gate Resistance | VGS=0V,VDS=0V,F=1MHz | Ω | 2 | - | |
| Ciss | Input Capacitance | VGS=0V, VDS=25V, Frequency=1MHz | pF | 7040 | - | |
| Coss | Output Capacitance | pF | 2506 | - | ||
| Crss | Reverse Transfer Capacitance | pF | 240 | - | ||
| td(ON) | Turn-on Delay Time | VDD=50V,RG=4Ω, IDS=50A,VGS=10V | ns | 28 | - | |
| Tr | Turn-on Rise Time | ns | 97 | - | ||
| td(OFF) | Turn-off Delay Time | ns | 76 | - | ||
| Tf | Turn-off Fall Time | ns | 93 | - | ||
| Qg | Total Gate Charge | VDS=80V, VGS=10V ID=50A | nC | 119 | - | |
| Qgs | Gate-Source Charge | nC | 39 | - | ||
| Qgd | Gate-Drain Charge | nC | 33 | - | ||
2410121248_HUAYI-HYG042N10NS1B_C2837371.pdf
Related Products
Digital transistor YANGJIE DTC124EUA featuring built in resistors and UL 94 V 0 rating for electronic
Product OverviewThe DTC124EUA is a digital transistor with built-in resistors, designed for easy configuration of inverter circuits without external input resistors. It features a surface mount package ideal for automatic insertion and meets UL-94 V-0 flammability rating. This NPN transistor is ...
N channel Power MOSFET XTX BRT40N210P2 with 840A Pulsed Drain Current and Enhanced Trench Technology
Product OverviewThe BRT40N210P2 is an N-channel Enhancement Mode Power MOSFET from XTX Technology Inc. It features advanced trench technology, offering excellent RDS(ON) and low gate charge. This MOSFET is suitable for load switch, PWM applications, and power management scenarios.Product AttributesB...
power switching device XCH XCH6003 trenched N channel MOSFET with low gate charge and fast switching
Product OverviewThe XCH6003 is a high cell density trenched N-channel MOSFET designed for efficient power switching applications. It offers excellent RDS(ON) and efficiency, making it suitable for most low-power switching and load switch applications. This device features super low gate charge and ...
Robust industrial IGBT module YANGJIE MG50HF12TLC1 with low VCEsat and high short circuit capability
Product OverviewThe MG50HF12TLC1 S-M392 is a high-performance IGBT module designed for inverter applications, AC/DC servo drive amplifiers, UPS systems, and soft switching welding machines. It features low VCE(sat) with Trench technology, a positive temperature coefficient for VCE(sat), high short ...
Contact Our Experts And Get A Free Consultation!
Our mission is to offer "High Quality" & "Good Service" & "Fast Delivery" to help our clients to gain more profits.
