High Current MOSFET HUAYI HYG065N07NS1C2 N Channel 70 Volt 70 Ampere Rating for Switching and Power Management
Key Attributes
Model Number:
HYG065N07NS1C2
Product Custom Attributes
Drain To Source Voltage:
70V
Current - Continuous Drain(Id):
70A
Operating Temperature -:
-55℃~+175℃
RDS(on):
5.3mΩ@10V,20A
Gate Threshold Voltage (Vgs(th)):
3V
Reverse Transfer Capacitance (Crss@Vds):
24pF
Number:
1 N-channel
Input Capacitance(Ciss):
3.07nF
Pd - Power Dissipation:
57.7W
Gate Charge(Qg):
52nC@10V
Mfr. Part #:
HYG065N07NS1C2
Package:
PDFN-8(5x6)
Product Description
Product Overview
The PDFN5*6 HYG065N07NS1C2 is an N-Channel Enhancement Mode MOSFET designed for switching applications, power management in inverter systems, and motor control. It offers high performance with a low on-resistance of 5.3 m (typ.) at VGS = 10V, 70V/70A rating, and is 100% avalanche tested for reliability and ruggedness. Halogen-free and RoHS compliant options are available.
Product Attributes
- Brand: HYMExa
- Package Type: PDFN5*6, PPAK5*6-8L
- Certifications: RoHS Compliant, Halogen-Free
- Material: Lead-free (matte tin termination)
Technical Specifications
| Parameter | Symbol | Test Conditions | Min | Typ. | Max | Unit |
| Absolute Maximum Ratings | ||||||
| Drain-Source Voltage | VDSS | Tc=25C | 70 | V | ||
| Gate-Source Voltage | VGSS | 20 | V | |||
| Junction Temperature Range | TJ | -55 | 175 | C | ||
| Storage Temperature Range | TSTG | -55 | 175 | C | ||
| Source Current-Continuous (Body Diode) | IS | Tc=25C | 70 | A | ||
| Pulsed Drain Current | IDM | Tc=25C | 300 | A | ||
| Continuous Drain Current | ID | Tc=25C | 70 | A | ||
| Continuous Drain Current | ID | Tc=100C | 49.5 | A | ||
| Maximum Power Dissipation | PD | Tc=25C | 57.7 | W | ||
| Maximum Power Dissipation | PD | Tc=100C | 28.8 | W | ||
| Thermal Resistance, Junction-to-Case | RJC | 2.6 | C/W | |||
| Thermal Resistance, Junction-to-Ambient | RJA | ** | 5 | C/W | ||
| Single Pulsed-Avalanche Energy | EAS | *** L=0.3mH | 214 | mJ | ||
| Electrical Characteristics (Tc =25C Unless Otherwise Noted) | ||||||
| Drain-Source Breakdown Voltage | BVDSS | VGS=0V,IDS= 250A | 70 | - | - | V |
| Drain-to-Source Leakage Current | IDSS | VDS= 70V,VGS=0V | - | 1 | A | |
| Drain-to-Source Leakage Current | IDSS | TJ=125C | - | 50 | A | |
| Gate Threshold Voltage | VGS(th) | VDS=VGS, IDS= 250A | 2 | 3 | 4 | V |
| Gate-Source Leakage Current | IGSS | VGS=20V,VDS=0V | - | 100 | nA | |
| Drain-Source On-State Resistance | RDS(ON) | VGS= 10V,IDS=20A | 5.3 | 6.5 | m | |
| Diode Characteristics | ||||||
| Diode Forward Voltage | VSD | ISD=20A,VGS=0V | 0.84 | 1.1 | V | |
| Reverse Recovery Time | trr | ISD=40A,dISD/dt=100A/s | 34 | - | ns | |
| Reverse Recovery Charge | Qrr | 37 | - | nC | ||
| Dynamic Characteristics | ||||||
| Gate Resistance | RG | VGS=0V,VDS=0V,F=1MHz | 3.5 | - | ||
| Input Capacitance | Ciss | VGS=0V, VDS= 25V, Frequency=1.0MHz | 3070 | - | pF | |
| Output Capacitance | Coss | VGS=0V, VDS= 25V, Frequency=1.0MHz | 825 | - | pF | |
| Reverse Transfer Capacitance | Crss | VGS=0V, VDS= 25V, Frequency=1.0MHz | 24 | - | pF | |
| Turn-on Delay Time | td(ON) | VDD= 35V,RG=4.0, IDS= 40A,VGS= 10V | 15 | - | ns | |
| Turn-on Rise Time | Tr | VDD= 35V,RG=4.0, IDS= 40A,VGS= 10V | 79 | - | ns | |
| Turn-off Delay Time | td(OFF) | VDD= 35V,RG=4.0, IDS= 40A,VGS= 10V | 42 | - | ns | |
| Turn-off Fall Time | Tf | VDD= 35V,RG=4.0, IDS= 40A,VGS= 10V | 70 | - | ns | |
| Gate Charge Characteristics | ||||||
| Total Gate Charge | Qg | VDS = 56V, VGS= 10V, IDs= 20A | 52 | - | nC | |
| Gate-Source Charge | Qgs | VDS = 56V, VGS= 10V, IDs= 20A | 16 | - | nC | |
| Gate-Drain Charge | Qgd | VDS = 56V, VGS= 10V, IDs= 20A | 12 | - | nC | |
2410121255_HUAYI-HYG065N07NS1C2_C5121292.pdf
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