N Channel MOSFET HUAYI HYG080N10LS1C2 with PDFN5 by 6 package and halogen free RoHS compliant design
Key Attributes
Model Number:
HYG080N10LS1C2
Product Custom Attributes
Drain To Source Voltage:
100V
Current - Continuous Drain(Id):
65A
Operating Temperature -:
-55℃~+175℃
RDS(on):
13mΩ@4.5V
Gate Threshold Voltage (Vgs(th)):
3V@250uA
Type:
N-Channel
Reverse Transfer Capacitance (Crss@Vds):
39pF
Number:
1 N-channel
Output Capacitance(Coss):
755pF
Pd - Power Dissipation:
71W
Input Capacitance(Ciss):
2.07nF
Gate Charge(Qg):
30.2nC@10V
Mfr. Part #:
HYG080N10LS1C2
Package:
PDFN5x6-8L
Product Description
Product Overview
The HYG080N10LS1C2 is a single N-Channel Enhancement Mode MOSFET designed for high-frequency point-of-load synchronous buck converters and power tool applications. It offers a 100V/65A rating with low on-state resistance (RDS(ON) = 6.9 m typ. @ VGS = 10V). The device is 100% avalanche tested, reliable, and rugged, with halogen-free options available (RoHS compliant).
Product Attributes
- Brand: HYG (Huayi Microelectronics Co., Ltd.)
- Origin: China
- Certifications: RoHS Compliant, Halogen-Free Available
- Package Type: PDFN5*6-8L
Technical Specifications
| Parameter | Symbol | Test Conditions | Min | Typ. | Max | Unit |
| Drain-Source On-State Resistance | RDS(ON) | VGS=10V,IDS=20A | - | 6.9 | 8.2 | m |
| VGS=4.5V,IDS=20A | - | 9.4 | 13.0 | m | ||
| Drain-Source Breakdown Voltage | BVDSS | VGS=0V,IDS=250A | 100 | - | - | V |
| Gate Threshold Voltage | VGS(th) | VDS=VGS, IDS=250A | 1.0 | 2.0 | 3.0 | V |
| Continuous Drain Current | ID | Tc=25C | - | 65 | - | A |
| Continuous Drain Current | ID | Tc=100C | - | 46 | - | A |
| Pulsed Drain Current | IDM | Tc=25C | - | 260 | - | A |
| Maximum Power Dissipation | PD | Tc=25C | - | 71 | - | W |
| Maximum Power Dissipation | PD | Tc=100C | - | 35 | - | W |
| Diode Forward Voltage | VSD | ISD=20A,VGS=0V | - | 0.84 | 1.3 | V |
| Input Capacitance | Ciss | VGS=0V, VDS=25V, Frequency=1.0MHz | - | 2070 | - | pF |
| Output Capacitance | Coss | VGS=0V, VDS=25V, Frequency=1.0MHz | - | 755 | - | pF |
| Reverse Transfer Capacitance | Crss | VGS=0V, VDS=25V, Frequency=1.0MHz | - | 39 | - | pF |
| Total Gate Charge | Qg10V | VDS =80V, VGS=10V, ID=20A | - | 30.2 | - | nC |
| Total Gate Charge | Qg4.5V | VDS =80V, VGS=4.5V, ID=20A | - | 15.8 | - | nC |
2410121306_HUAYI-HYG080N10LS1C2_C3011225.pdf
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