HYG067N07NQ1D 68 Volt 70 Amp N Channel MOSFET with Low On Resistance and Avalanche Energy Capability
Key Attributes
Model Number:
HYG067N07NQ1D
Product Custom Attributes
Drain To Source Voltage:
68V
Current - Continuous Drain(Id):
70A
Operating Temperature -:
-55℃~+175℃
RDS(on):
8.3mΩ@10V
Gate Threshold Voltage (Vgs(th)):
-
Type:
N-Channel
Reverse Transfer Capacitance (Crss@Vds):
139pF
Number:
1 N-channel
Output Capacitance(Coss):
233pF
Input Capacitance(Ciss):
7.089nF
Pd - Power Dissipation:
86W
Gate Charge(Qg):
110nC@10V
Mfr. Part #:
HYG067N07NQ1D
Package:
TO-252-2L
Product Description
Product Overview
The HYG067N07NQ1D/U/V is a high-performance N-Channel Enhancement Mode MOSFET designed for various electronic applications. It features a 68V/70A rating with a low on-resistance of 6.8m (typ.) at VGS = 10V. This device is 100% avalanche tested, ensuring reliability and ruggedness. It is available in Halogen Free and Green (RoHS Compliant) versions, making it suitable for portable equipment, battery-powered systems, DC-DC converters, and switching applications.
Product Attributes
- Brand: HYM (Huayi Microelectronics Co., Ltd.)
- Origin: China
- Certifications: RoHS Compliant, Halogen Free
Technical Specifications
| Part Number | Package | VDSS (V) | ID (A) | RDS(ON) (m) | VGS(th) (V) | Avalanche Energy (mJ) |
|---|---|---|---|---|---|---|
| HYG067N07NQ1D | TO-252-2L | 68 | 70 | 6.8 (typ. @ VGS=10V) | 2-4 | 192 (typ. @ L=0.3mH) |
| HYG067N07NQ1U | TO-251-3L | 68 | 70 | 6.8 (typ. @ VGS=10V) | 2-4 | 192 (typ. @ L=0.3mH) |
| HYG067N07NQ1V | TO-251-3S | 68 | 70 | 6.8 (typ. @ VGS=10V) | 2-4 | 192 (typ. @ L=0.3mH) |
2409302203_HUAYI-HYG067N07NQ1D_C2838123.pdf
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