N Channel Enhancement Mode MOSFET HUAYI HYG043N10NS2B with 100V 164A rating and low on state resistance
Key Attributes
Model Number:
HYG043N10NS2B
Product Custom Attributes
Configuration:
-
Drain To Source Voltage:
100V
Current - Continuous Drain(Id):
164A
Operating Temperature -:
-
RDS(on):
4.8mΩ@10V,50A
Gate Threshold Voltage (Vgs(th)):
4V@250uA
Type:
N-Channel
Reverse Transfer Capacitance (Crss@Vds):
196pF
Number:
1 N-channel
Output Capacitance(Coss):
2.234nF
Pd - Power Dissipation:
258.6W
Input Capacitance(Ciss):
6.236nF
Gate Charge(Qg):
100nC@10V
Mfr. Part #:
HYG043N10NS2B
Package:
TO-263-2L
Product Description
HYG043N10NS2P/B N-Channel Enhancement Mode MOSFET
The HYG043N10NS2P/B is a high-performance N-Channel Enhancement Mode MOSFET designed for demanding applications. It features a low on-state resistance of 3.5 m (typ.) at VGS = 10V, 100V/164A rating, and 100% avalanche tested for reliability. This rugged device is suitable for Battery Management Systems and controllers, offering a robust and efficient solution.
Product Attributes
- Brand: HYG (Huayi Microelectronics)
- Origin: China
- Certifications: Halogen Free and Green Devices Available (RoHS Compliant)
Technical Specifications
| Parameter | Symbol | Test Conditions | Min | Typ. | Max | Unit |
|---|---|---|---|---|---|---|
| Absolute Maximum Ratings | ||||||
| Drain-Source Voltage | VDSS | Tc=25C Unless Otherwise Noted | - | 100 | - | V |
| Gate-Source Voltage | VGSS | - | - | 20 | - | V |
| Junction Temperature Range | TJ | - | -55 | - | 175 | C |
| Storage Temperature Range | TSTG | - | -55 | - | 175 | C |
| Source Current-Continuous (Body Diode) | IS | Tc=25C, Mounted on Large Heat Sink | - | 164 | - | A |
| Pulsed Drain Current | IDM | Tc=25C, Pulse width limited by max.junction temperature | - | 590 | - | A |
| Continuous Drain Current | ID | Tc=25C | - | 164 | - | A |
| Continuous Drain Current | ID | Tc=100C | - | 116 | - | A |
| Maximum Power Dissipation | PD | Tc=25C | - | 258.6 | - | W |
| Maximum Power Dissipation | PD | Tc=100C | - | 129.3 | - | W |
| Thermal Resistance, Junction-to-Case | RJC | - | - | 0.58 | - | C/W |
| Thermal Resistance, Junction-to-Ambient | RJA | Surface mounted on 1in FR-4 board | - | 62.5 | - | C/W |
| Single Pulsed-Avalanche Energy | EAS | L=0.3mH, Limited by TJmax, starting TJ=25C, RG=25, VGS=10V | - | 640 | - | mJ |
| Electrical Characteristics | ||||||
| Drain-Source Breakdown Voltage | BVDSS | VGS=0V, IDS=250A | 100 | - | - | V |
| Drain-to-Source Leakage Current | IDSS | VDS=100V,VGS=0V | - | - | 1 | A |
| Drain-to-Source Leakage Current | IDSS | TJ=125C, VDS=100V,VGS=0V | - | - | 50 | A |
| Gate Threshold Voltage | VGS(th) | VDS=VGS, IDS=250A | 2 | 3.2 | 4 | V |
| Gate-Source Leakage Current | IGSS | VGS=20V,VDS=0V | - | - | 100 | nA |
| Drain-Source On-State Resistance | RDS(ON) | VGS=10V,IDS=50A | - | 3.5 | 4.8 | m |
| Diode Forward Voltage | VSD | ISD=50A,VGS=0V | - | 0.9 | 1.3 | V |
| Reverse Recovery Time | trr | ISD=50A,dISD/dt=100A/s | - | 57 | - | ns |
| Reverse Recovery Charge | Qrr | ISD=50A,dISD/dt=100A/s | - | 94 | - | nC |
| Dynamic Characteristics | ||||||
| Gate Resistance | RG | VGS=0V,VDS=0V,F=1MHz | - | 1 | - | |
| Input Capacitance | Ciss | VGS=0V, VDS=25V, Frequency=1MHz | - | 6236 | - | pF |
| Output Capacitance | Coss | VGS=0V, VDS=25V, Frequency=1MHz | - | 2234 | - | pF |
| Reverse Transfer Capacitance | Crss | VGS=0V, VDS=25V, Frequency=1MHz | - | 196 | - | pF |
| Turn-on Delay Time | td(ON) | VDD=50V,RG=2.5, IDS=50A,VGS=10V | - | 24 | - | ns |
| Turn-on Rise Time | Tr | VDD=50V,RG=2.5, IDS=50A,VGS=10V | - | 84 | - | ns |
| Turn-off Delay Time | td(OFF) | VDD=50V,RG=2.5, IDS=50A,VGS=10V | - | 47 | - | ns |
| Turn-off Fall Time | Tf | VDD=50V,RG=2.5, IDS=50A,VGS=10V | - | 71 | - | ns |
| Gate Charge Characteristics | ||||||
| Total Gate Charge | Qg | VDS=80V, IDs=50A, VGS=10V | - | 100 | - | nC |
| Gate-Source Charge | Qgs | VDS=80V, IDs=50A, VGS=10V | - | 35 | - | nC |
| Gate-Drain Charge | Qgd | VDS=80V, IDs=50A, VGS=10V | - | 24 | - | nC |
| Gate plateau voltage | Vplateau | VDS=80V, IDs=50A, VGS=10V | - | 5.3 | - | V |
2410121317_HUAYI-HYG043N10NS2B_C19268964.pdf
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