Channel enhancement transistor HUAYI HY1920W halogen free device for rugged inverter power solutions
Key Attributes
Model Number:
HY1920W
Product Custom Attributes
Drain To Source Voltage:
200V
Current - Continuous Drain(Id):
90A
Operating Temperature -:
-55℃~+175℃
RDS(on):
25mΩ@10V
Gate Threshold Voltage (Vgs(th)):
4V@250uA
Type:
N-Channel
Reverse Transfer Capacitance (Crss@Vds):
165pF
Number:
1 N-channel
Input Capacitance(Ciss):
5.871nF
Pd - Power Dissipation:
375W
Mfr. Part #:
HY1920W
Package:
TO-247A-3L
Product Description
Product Overview
This product offers channel enhancement with MOSFE features, providing avalanche tested, reliable, and rugged performance. It is halogen-free and green device compliant, suitable for power management in inverter systems.
Product Attributes
- Brand: HUAYI
- Certifications: RoHS Compliant, Halogen Free, Green Device Available
- Material: Halogen Free Device
Technical Specifications
| Symbol | Parameter | Rating | Unit | Test Conditions | Min | Typ | Max |
| Absolute Maximum Ratings | |||||||
| VDSS | Drain Source Voltage | V | Unless Otherwise Noted | 30 | |||
| VGSS | Gate Source Voltage | V | -20 | +20 | |||
| TJ | Maximum Junction Temperature | °C | 150 | ||||
| TSTG | Storage Temperature Range | °C | -55 | +150 | |||
| ID | Continuous Drain Current | A | Mounted on Large Heat Sink | 30 | |||
| IDM | Pulsed Drain Current | A | 120 | ||||
| ID | Continuous Drain Current | A | TC = 25 °C | 15 | |||
| PD | Maximum Power Dissipation | W | TC = 25 °C | 150 | |||
| PD | Maximum Power Dissipation | W | TC = 70 °C | 75 | |||
| RthJC | Thermal Resistance, Junction to Case | °C/W | 0.83 | ||||
| RthJA | Thermal Resistance, Junction to Ambient | °C/W | 62.5 | ||||
| EAS | Single Pulsed Avalanche Energy | mJ | L = 1mH | 80 | |||
| Electrical Characteristics (TC = 25 °C Unless Otherwise Noted) | |||||||
| BVDSS | Drain Source Breakdown Voltage | V | VGS = 0V, ID = 250µA | 30 | |||
| IDSS | Drain to Source Leakage Current | µA | VDS = 30V, VGS = 0V | 1 | |||
| IDSS | Drain to Source Leakage Current | µA | VDS = 30V, VGS = 0V, TJ = 150 °C | 10 | |||
| VGS(th) | Gate Threshold Voltage | V | VDS = 5V, ID = 250µA | 1 | 3 | ||
| IGSS | Gate Source Leakage Current | nA | VGS = ±20V, VDS = 0V | ±100 | |||
| RDS(ON) | Drain Source On State Resistance | mΩ | VGS = 10V, ID = 15A | 4 | 6 | ||
| VSD | Diode Forward Voltage | V | ISD = 15A, VGS = 0V | 1.0 | 1.4 | ||
| trr | Reverse Recovery Time | ns | ISD = 15A, dISD/dt = 100A/µs | 50 | |||
| Qrr | Reverse Recovery Charge | nC | 10 | ||||
| Electrical Characteristics (Cont.) (TC = 25 °C Unless Otherwise Noted) | |||||||
| RG | Gate Resistance | Ω | VGS = 0V, VDS = 0V, f = 1MHz | 4.7 | |||
| Ciss | Input Capacitance | pF | VGS = 0V, VDS = 15V, f = 1MHz | 350 | |||
| Coss | Output Capacitance | pF | VGS = 0V, VDS = 15V, f = 1MHz | 120 | |||
| Crss | Reverse Transfer Capacitance | pF | VGS = 0V, VDS = 15V, f = 1MHz | 40 | |||
| td(on) | Turn on Delay Time | ns | VDD = 15V, RG = 25 Ω, ID = 15A, VGS = 10V | 15 | |||
| tr | Turn on Rise Time | ns | VDD = 15V, RG = 25 Ω, ID = 15A, VGS = 10V | 25 | |||
| td(off) | Turn off Delay Time | ns | VDD = 15V, RG = 25 Ω, ID = 15A, VGS = 10V | 40 | |||
| tf | Turn off Fall Time | ns | VDD = 15V, RG = 25 Ω, ID = 15A, VGS = 10V | 30 | |||
| Qg | Total Gate Charge | nC | VDS = 15V, ID = 15A, VGS = 10V | 45 | |||
| Qgs | Gate Source Charge | nC | 10 | ||||
| Qgd | Gate Drain Charge | nC | 15 | ||||
2410010001_HUAYI-HY1920W_C358133.pdf
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