Power Switching MOSFET HUAYI HYG050N08NS1P N Channel Enhancement Mode for Motor Control and Inverter
Key Attributes
Model Number:
HYG050N08NS1P
Product Custom Attributes
Drain To Source Voltage:
80V
Current - Continuous Drain(Id):
130A
Operating Temperature -:
-55℃~+175℃
RDS(on):
5mΩ@10V
Gate Threshold Voltage (Vgs(th)):
4V@250uA
Type:
N-Channel
Reverse Transfer Capacitance (Crss@Vds):
25pF
Number:
1 N-channel
Output Capacitance(Coss):
1.77nF
Input Capacitance(Ciss):
4.28nF
Pd - Power Dissipation:
187.5W
Gate Charge(Qg):
68nC@10V
Mfr. Part #:
HYG050N08NS1P
Package:
TO-220FB-3
Product Description
Product Overview
The HYG050N08NS1P/B is an N-Channel Enhancement Mode MOSFET designed for switching applications, power management in inverter systems, and motor control. It features high performance with low on-resistance (RDS(ON)= 4 m typ. @ VGS = 10V), 100% avalanche tested, and a reliable, rugged design. Lead-free and green devices are available, compliant with RoHS standards.
Product Attributes
- Brand: Hymexa
- Origin: China
- Material: Lead-Free and Green Devices Available (RoHS Compliant)
- Certifications: RoHS Compliant, IPC/JEDEC J-STD-020 compliant for MSL classification
Technical Specifications
| Parameter | Symbol | Test Conditions | Min | Typ. | Max | Unit |
| Absolute Maximum Ratings | ||||||
| Drain-Source Voltage | VDSS | Tc=25C Unless Otherwise Noted | - | - | 80 | V |
| Gate-Source Voltage | VGSS | - | - | ±20 | V | |
| Junction Temperature Range | TJ | - | -55 | - | 175 | °C |
| Storage Temperature Range | TSTG | - | -55 | - | 175 | °C |
| Source Current-Continuous (Body Diode) | IS | Tc=25°C, Mounted on Large Heat Sink | - | - | 130 | A |
| Pulsed Drain Current | IDM | Tc=25°C * | - | - | 450 | A |
| Continuous Drain Current | ID | Tc=25°C | - | - | 130 | A |
| Continuous Drain Current | ID | Tc=100°C | - | - | 92 | A |
| Maximum Power Dissipation | PD | Tc=25°C | - | - | 187.5 | W |
| Maximum Power Dissipation | PD | Tc=100°C | - | - | 93.7 | W |
| Thermal Resistance, Junction-to-Case | RθJC | - | - | 0.8 | °C/W | |
| Thermal Resistance, Junction-to-Ambient | RθJA | ** | - | 62.5 | °C/W | |
| Single Pulsed-Avalanche Energy | EAS | L=0.3mH *** | - | 244 | - | mJ |
| Electrical Characteristics (Tc =25°C Unless Otherwise Noted) | ||||||
| Drain-Source Breakdown Voltage | BVDSS | VGS=0V,IDS= 250μA | 80 | - | - | V |
| Drain-to-Source Leakage Current | IDSS | VDS= 80V,VGS=0V | - | - | 1 | μA |
| Drain-to-Source Leakage Current | IDSS | TJ=125°C | - | - | 50 | μA |
| Gate Threshold Voltage | VGS(th) | VDS=VGS, IDS= 250μA | 2 | 3 | 4 | V |
| Gate-Source Leakage Current | IGSS | VGS=±20V,VDS=0V | - | - | ±100 | nA |
| Drain-Source On-State Resistance | RDS(ON) | VGS= 10V,IDS= 50A | - | 4.0 | 5.0 | mΩ |
| Diode Forward Voltage | VSD | ISD=50A,VGS=0V | - | 0.9 | 1.2 | V |
| Reverse Recovery Time | trr | ISD=50A,dISD/dt=100A/μs | - | 52 | - | ns |
| Reverse Recovery Charge | Qrr | - | - | 70 | - | nC |
| Dynamic Characteristics (Tc =25°C Unless Otherwise Noted) | ||||||
| Gate Resistance | RG | VGS=0V,VDS=0V,F=1MHz | - | 2.6 | - | Ω |
| Input Capacitance | Ciss | VGS=0V, VDS= 25V, Frequency=1.0MHz | - | 4280 | - | pF |
| Output Capacitance | Coss | - | - | 1770 | - | pF |
| Reverse Transfer Capacitance | Crss | - | - | 25 | - | pF |
| Turn-on Delay Time | td(ON) | VDD= 40V,RG=4Ω, IDS= 50A,VGS= 10V | - | 17 | - | ns |
| Turn-on Rise Time | Tr | - | - | 87 | - | ns |
| Turn-off Delay Time | td(OFF) | - | - | 47 | - | ns |
| Turn-off Fall Time | Tf | - | - | 101 | - | ns |
| Gate Charge Characteristics | ||||||
| Total Gate Charge | Qg | VDS = 64V, VGS= 10V, IDs= 50A | - | 68 | - | nC |
| Gate-Source Charge | Qgs | - | - | 22 | - | nC |
| Gate-Drain Charge | Qgd | - | - | 17 | - | nC |
2410121248_HUAYI-HYG050N08NS1P_C2827236.pdf
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