switching MOSFET HUAYI HYG180N10LS1P with 100V drain source voltage and 50A continuous drain current
Key Attributes
Model Number:
HYG180N10LS1P
Product Custom Attributes
Drain To Source Voltage:
100V
Current - Continuous Drain(Id):
50A
Operating Temperature -:
-55℃~+175℃
RDS(on):
34mΩ@4.5V
Gate Threshold Voltage (Vgs(th)):
3V@250uA
Type:
N-Channel
Reverse Transfer Capacitance (Crss@Vds):
22.8pF
Number:
1 N-channel
Output Capacitance(Coss):
476pF
Input Capacitance(Ciss):
1.606nF
Pd - Power Dissipation:
93.7W
Gate Charge(Qg):
24.6nC@10V
Mfr. Part #:
HYG180N10LS1P
Package:
TO-220FB-3
Product Description
Product Overview
The HYG180N10LS1P is a single N-Channel Enhancement Mode MOSFET from Hymexa. It features a 100V/50A rating with low on-resistance (RDS(ON)= 16.5m typ. @ VGS = 10V). This device is 100% avalanche tested, reliable, and rugged, with lead-free (RoHS compliant) options available. It is suitable for high-frequency point-of-load synchronous buck converters and power tool applications.
Product Attributes
- Brand: Hymexa
- Origin: China (Huayi Microelectronics Co., Ltd.)
- Material: Lead-Free Devices Available (RoHS Compliant)
- Certifications: RoHS Compliant, IPC/JEDEC J-STD-020 compliant for MSL classification
Technical Specifications
| Model | Parameter | Condition | Min | Typ. | Max | Unit |
| HYG180N10LS1P | Drain-Source Voltage (VDSS) | - | - | - | 100 | V |
| Gate-Source Voltage (VGSS) | - | - | - | ±20 | V | |
| Max Junction Temperature (TJ) | - | - | - | 175 | °C | |
| Storage Temperature Range (TSTG) | - | -55 | - | 175 | °C | |
| Continuous Drain Current (ID) | Tc=25°C | - | - | 50 | A | |
| Continuous Drain Current (ID) | Tc=100°C | - | - | 35.4 | A | |
| Pulsed Drain Current (IDM) | Tc=25°C | - | - | 200 | A | |
| Maximum Power Dissipation (PD) | Tc=25°C | - | - | 93.7 | W | |
| Maximum Power Dissipation (PD) | Tc=100°C | - | - | 46.8 | W | |
| Drain-Source On-State Resistance (RDS(ON)) | VGS=10V, IDS=25A | - | - | 16.5 | 21 | mΩ |
| Drain-Source On-State Resistance (RDS(ON)) | VGS=4.5V, IDS=20A | - | - | 27 | 34 | mΩ |
| Gate Threshold Voltage (VGS(th)) | VDS=VGS, IDS=250μA | - | 1.0 | 1.8 | 3.0 | V |
2409302203_HUAYI-HYG180N10LS1P_C2841917.pdf
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