N Channel MOSFET HYG053N10NS1D Featuring 5.2 Milliohm RDS ON and 100 Volt Breakdown Voltage for Drive
Key Attributes
Model Number:
HYG053N10NS1D
Product Custom Attributes
Drain To Source Voltage:
100V
Current - Continuous Drain(Id):
95A
Operating Temperature -:
-55℃~+175℃
RDS(on):
6mΩ@10V,20A
Gate Threshold Voltage (Vgs(th)):
3.8V@250uA
Type:
N-Channel
Reverse Transfer Capacitance (Crss@Vds):
63pF
Number:
1 N-channel
Input Capacitance(Ciss):
3.642nF
Output Capacitance(Coss):
1.386nF
Pd - Power Dissipation:
107.1W
Gate Charge(Qg):
65nC@10V
Mfr. Part #:
HYG053N10NS1D
Package:
TO-252-2L
Product Description
Product Overview
The HYG053N10NS1D/U/V is an N-Channel Enhancement Mode MOSFET designed for switching applications, motor control and drive, and battery management. It offers high performance with a 100V/95A rating and a low RDS(ON) of 5.2m (typ.) at VGS = 10V. This device is 100% avalanche tested, reliable, and rugged, with halogen-free options available (RoHS Compliant).
Product Attributes
- Brand: HYM (Huayi Microelectronics Co., Ltd.)
- Origin: China
- Certifications: RoHS Compliant, Halogen-Free Devices Available
Technical Specifications
| Model | Feature | RDS(ON) | VDSS | ID | Package |
| HYG053N10NS1D/U/V | N-Channel Enhancement Mode MOSFET | 5.2m(typ.)@VGS = 10V | 100V | 95A | TO-252-2L, TO-251-3L, TO-251-3S |
| Parameter | Test Conditions | Typical Value | Unit |
| Drain-Source Breakdown Voltage (BVDSS) | VGS=0V, IDS= 250A | 100 | V |
| Gate Threshold Voltage (VGS(th)) | VDS=VGS, IDS= 250A | 3 | V |
| Drain-Source On-State Resistance (RDS(ON)) | VGS= 10V, IDS=20A | 5.2 | m |
| Diode Forward Voltage (VSD) | ISD=20A, VGS=0V | 0.84 | V |
| Total Gate Charge (Qg) | VDS = 80V, VGS= 10V, IDS = 20A | 65 | nC |
| Input Capacitance (Ciss) | VGS=0V, VDS= 25V, Frequency=1.0MHz | 3642 | pF |
| Output Capacitance (Coss) | VGS=0V, VDS= 25V, Frequency=1.0MHz | 1386 | pF |
| Reverse Transfer Capacitance (Crss) | VGS=0V, VDS= 25V, Frequency=1.0MHz | 63 | pF |
| Symbol | Parameter | Rating | Unit |
| VDSS | Drain-Source Voltage | 100 | V |
| VGSS | Gate-Source Voltage | 20 | V |
| TJ | Junction Temperature Range | -55 to 175 | C |
| TSTG | Storage Temperature Range | -55 to 175 | C |
| ID | Continuous Drain Current | 95 | A |
| IDM | Pulsed Drain Current | 350 | A |
| PD | Maximum Power Dissipation | 107.1 | W |
| RJC | Thermal Resistance, Junction-to-Case | 1.4 | C/W |
| RJA | Thermal Resistance, Junction-to-Ambient | 110 | C/W |
| EAS | Single Pulsed Avalanche Energy | 416 | mJ |
2410121246_HUAYI-HYG053N10NS1D_C18236201.pdf
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