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quality Single N Channel MOSFET HUAYI HYG025N04NA1C2 featuring low on resistance and halogen free compliance factory
quality Single N Channel MOSFET HUAYI HYG025N04NA1C2 featuring low on resistance and halogen free compliance factory

Single N Channel MOSFET HUAYI HYG025N04NA1C2 featuring low on resistance and halogen free compliance

Key Attributes
Model Number: HYG025N04NA1C2
Product Custom Attributes
Drain To Source Voltage:
40V
Current - Continuous Drain(Id):
190A
Operating Temperature -:
-55℃~+175℃
RDS(on):
1.8mΩ@10V
Gate Threshold Voltage (Vgs(th)):
4V@250uA
Type:
N-Channel
Reverse Transfer Capacitance (Crss@Vds):
615pF
Number:
1 N-channel
Input Capacitance(Ciss):
5.744nF
Pd - Power Dissipation:
130W
Gate Charge(Qg):
122.2nC@10V
Mfr. Part #:
HYG025N04NA1C2
Package:
PDFN-8(5x6)
Product Description

Product Overview

The HYG025N04NA1C2 is a single N-Channel Enhancement Mode MOSFET from Huayi Microelectronics. It features a high current capability of 40V/190A with a low on-resistance of 1.4m(typ.) @VGS = 10V. This device is 100% avalanche tested, reliable, and rugged, with halogen-free options available. It is suitable for applications such as load switches and lithium battery protection boards.

Product Attributes

  • Brand: Huayi Microelectronics
  • Origin: China
  • Certifications: RoHS compliant, Halogen-Free (Br/Cl does not exceed 900ppm by weight in homogeneous material and total of Br and Cl does not exceed 1500ppm by weight)

Technical Specifications

ParameterSymbolTest ConditionsMinTyp.MaxUnit
Absolute Maximum Ratings
Drain-Source VoltageVDSSTc=25Unless Otherwise Noted--40V
Gate-Source VoltageVGSS--±20V
Junction Temperature RangeTJ--55-175
Storage Temperature RangeTSTG--55-175
Source Current-Continuous(Body Diode)ISTc=25, Mounted on Large Heat Sink-190-A
Pulsed Drain CurrentIDMTc=25-720-A
Continuous Drain CurrentIDTc=25-190-A
Continuous Drain CurrentIDTc=100-135-A
Maximum Power DissipationPDTc=25-130-W
Maximum Power DissipationPDTc=100-65-W
Thermal Resistance, Junction-to-CaseRJC--1.15-/W
Thermal Resistance, Junction-to-AmbientRJASurface mounted on FR-4 board.-45-/W
Single-Pulsed-Avalanche EnergyEASL=0.1mH, Limited by TJmax, starting TJ=25, RG=25.,VGS=10V.-393-mJ
Electrical Characteristics
Drain-Source Breakdown VoltageBVDSSVGS=0V,IDS=250A40--V
Drain-to-Source Leakage CurrentIDSSVDS=40V,VGS=0V--1µA
Drain-to-Source Leakage CurrentIDSSTJ=125, VDS=40V,VGS=0V--50µA
Gate Threshold VoltageVGS(th)VDS=VGS, IDS=250A234V
Gate-Source Leakage CurrentIGSSVGS=±20V,VDS=0V--±100nA
Drain-Source On-State ResistanceRDS(ON)VGS=10V,IDS=60A-1.41.8mΩ
Diode Forward VoltageVSD*ISD=60A,VGS=0V-0.81.2V
Reverse Recovery TimetrrISD=20A,dISD/dt=100A/μs-25.1-ns
Reverse Recovery ChargeQrr--17.6-nC
Gate ResistanceRGVGS=0V,VDS=0V,F=1MHz-4.5-Ω
Input CapacitanceCissVGS=0V, VDS=25V, Frequency=1.0MHz-5744-pF
Output CapacitanceCossVGS=0V, VDS=25V, Frequency=1.0MHz-787-pF
Reverse Transfer CapacitanceCrssVGS=0V, VDS=25V, Frequency=1.0MHz-615-pF
Turn-on Delay Timetd(ON)VDD=20V,RG=4Ω, IDS=60A,VGS=10V-16.7-ns
Turn-on Rise TimeTrVDD=20V,RG=4Ω, IDS=60A,VGS=10V-137.9-ns
Turn-off Delay Timetd(OFF)VDD=20V,RG=4Ω, IDS=60A,VGS=10V-112.0-ns
Turn-off Fall TimeTfVDD=20V,RG=4Ω, IDS=60A,VGS=10V-118.8-ns
Total Gate ChargeQgVDS =32V, VGS=10V, IDS=60A-122.2-nC
Gate-Source ChargeQgsVDS =32V, VGS=10V, IDS=60A-23.5-nC
Gate-Drain ChargeQgdVDS =32V, VGS=10V, IDS=60A-42.0-nC

2410122027_HUAYI-HYG025N04NA1C2_C2917677.pdf

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