switching transistor HXY MOSFET NGTB40N120IHRWG-HXY with RoHS compliance and green halogen free packaging
Key Attributes
Model Number:
NGTB40N120IHRWG-HXY
Product Custom Attributes
Pd - Power Dissipation:
441W
Td(off):
262ns
Td(on):
25ns
Collector-Emitter Breakdown Voltage (Vces):
1.2kV
Reverse Transfer Capacitance (Cres):
93pF
IGBT Type:
FS (Field Stop)
Gate-Emitter Threshold Voltage (Vge(th)@Ic):
4.3V@1mA
Gate Charge(Qg):
346nC@15V
Reverse Recovery Time(trr):
94ns
Switching Energy(Eoff):
2.3mJ
Turn-On Energy (Eon):
1.3mJ
Input Capacitance(Cies):
3.98nF
Pulsed Current- Forward(Ifm):
160A
Output Capacitance(Coes):
157pF
Mfr. Part #:
NGTB40N120IHRWG-HXY
Package:
TO-247
Product Description
Product Overview
The NGTB40N120IHRWG is an Insulated Gate Bipolar Transistor (IGBT) manufactured using advanced Trench and Field Stop (T-FS) technology. This technology enhances performance by reducing conduction losses, improving switching efficiency, and increasing avalanche energy. It is designed for applications requiring high reliability and robust performance, with features like a positive temperature coefficient, fast switching, low VCE(sat), and a high operating temperature of 175. The device is AEC-Q101 Qualified and available in Halogen Free and Green (RoHS Compliant) versions.
Product Attributes
- Brand: HUAXUANYANG (HXY ELECTRONICS CO.,LTD)
- Model: NGTB40N120IHRWG
- Origin: Shenzhen HuaXuanYang Electronics CO.,LTD
- Certifications: AEC-Q101 Qualified, RoHS Compliant
- Package Type: TO-247
- Device Per Unit: Tube (30)
Technical Specifications
| Parameter | Value | Unit | Description |
| VCES | 1200 | V | Collector-Emitter Voltage |
| IC (@TC=25C) | 80 | A | Collector Current |
| IC (@TC=100C) | 40 | A | Collector Current |
| ICM (Pulsed) | 160 | A | Pulsed Collector Current, tp limited by TJmax |
| VGE(TH) (Typ.) | 5.3 | V | Gate Threshold Voltage (VCE=VGE, IC=1mA) |
| VCE(sat).typ (@IC=40A, TJ=25) | 1.70 | V | Collector-Emitter Saturation Voltage |
| PD (@TC=25C) | 441 | W | Power Dissipation |
| TJmax, Tstg | -55 to 175 | Operating Junction and Storage Temperature Range | |
| RJC (IGBT) | 0.34 | /W | Junction-to-Case (IGBT) |
| RJC (Diode) | 0.80 | /W | Junction-to-Case (Diode) |
| RJA | 40 | /W | Junction-to-Ambient |
| Cies (Typ.) | 3980 | pF | Input Capacitance (VGE=0V, VCE=25V, f=1.0MHz) |
| Qg (Typ.) | 346 | nC | Gate charge (VCC=960V, ICE=40A, VGE=15V) |
| Eon (Typ. @TJ=25) | 1.30 | mJ | Turn-On Switching Loss |
| Eoff (Typ. @TJ=25) | 2.30 | mJ | Turn-Off Switching Loss |
| Trr (Typ. @TJ=25) | 94 | ns | Reverse Recovery Time (IF=40A, VCC=600V, di/dt=200A/s) |
| Qrr (Typ. @TJ=25) | 225 | nC | Reverse Recovery Charge |
| Irrm (Typ. @TJ=25) | 9.7 | A | Reverse Recovery Current |
Applications
- PTC
- Motor drives
- OBC
2509181737_HXY-MOSFET-NGTB40N120IHRWG-HXY_C49003329.pdf
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