Power Switching MOSFET HYG032N08NS1W Featuring 80V Drain Source Voltage and 185A Continuous Current
Key Attributes
Model Number:
HYG032N08NS1W
Product Custom Attributes
Drain To Source Voltage:
80V
Current - Continuous Drain(Id):
185A
Operating Temperature -:
-55℃~+175℃
RDS(on):
3.2mΩ@10V
Gate Threshold Voltage (Vgs(th)):
4V@250uA
Type:
N-Channel
Reverse Transfer Capacitance (Crss@Vds):
169pF
Number:
1 N-channel
Output Capacitance(Coss):
2.75nF
Input Capacitance(Ciss):
7.5nF
Pd - Power Dissipation:
230.8W
Gate Charge(Qg):
117nC@10V
Mfr. Part #:
HYG032N08NS1W
Package:
TO-247A-3L
Product Description
Product Overview
The HYG032N08NS1W is an N-Channel Enhancement Mode MOSFET designed for power switching applications. It offers high performance with a low RDS(ON) of 2.8m (typ.) at VGS = 10V and a continuous drain current of 185A. This device is 100% avalanche tested, reliable, and rugged, with halogen-free and green (RoHS compliant) options available. It is suitable for Uninterruptible Power Supply (UPS) systems and other power switching applications.
Product Attributes
- Brand: HYG (Huayi Microelectronics)
- Origin: China
- Material: Halogen-Free and Green Devices Available (RoHS Compliant)
- Certifications: RoHS Compliant, IPC/JEDEC J-STD-020 compliant for MSL classification
Technical Specifications
| Model | Parameter | Test Conditions | Min | Typ. | Max | Unit |
| HYG032N08NS1W | Drain-Source Voltage (VDSS) | VGS=0V | 80 | V | ||
| Gate-Source Voltage (VGSS) | 20 | V | ||||
| Maximum Junction Temperature (TJ) | 175 | C | ||||
| Storage Temperature Range (TSTG) | -55 | 175 | C | |||
| Continuous Drain Current (ID) | Tc=25C | 185 | A | |||
| Continuous Drain Current (ID) | Tc=100C | 130.8 | A | |||
| Pulsed Drain Current (IDM) | Tc=25C | 650 | A | |||
| Maximum Power Dissipation (PD) | Tc=25C | 230.8 | W | |||
| Maximum Power Dissipation (PD) | Tc=100C | 115.4 | W | |||
| Thermal Resistance-Junction to Case (RJC) | 0.65 | C/W | ||||
| HYG032N08NS1W | Drain-Source Breakdown Voltage (BVDSS) | VGS=0V, IDS=250A | 80 | V | ||
| Gate Threshold Voltage (VGS(th)) | VDS=VGS, IDS=250A | 2 | 3 | 4 | V | |
| Drain-Source On-State Resistance (RDS(ON)) | VGS=10V, IDS=50A | 2.8 | 3.2 | m | ||
| Diode Forward Voltage (VSD) | ISD=50A, VGS=0V | 0.88 | 1.2 | V | ||
| Reverse Recovery Time (trr) | ISD=50A, dISD/dt=100A/s | 64 | ns | |||
| Reverse Recovery Charge (Qrr) | 110 | nC | ||||
| Total Gate Charge (Qg) | VDS =64V, VGS=10V ID=50A | 117 | nC |
2410121257_HUAYI-HYG032N08NS1W_C2858385.pdf
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