N Channel Enhancement Mode MOSFET HUAYI HY030N06P with 65V Drain Source Voltage and Low On Resistance
Key Attributes
Model Number:
HY030N06P
Product Custom Attributes
Drain To Source Voltage:
65V
Current - Continuous Drain(Id):
140A
Operating Temperature -:
-55℃~+150℃
RDS(on):
2.4mΩ@10V
Gate Threshold Voltage (Vgs(th)):
-
Type:
N-Channel
Reverse Transfer Capacitance (Crss@Vds):
220pF
Number:
1 N-channel
Output Capacitance(Coss):
2.35nF
Pd - Power Dissipation:
113.6W
Input Capacitance(Ciss):
5.27nF
Gate Charge(Qg):
96nC@10V
Mfr. Part #:
HY030N06P
Package:
TO-220FB-3
Product Description
HY030N06 N-Channel Enhancement Mode MOSFET
The HY030N06 is a high-performance N-Channel Enhancement Mode MOSFET designed for switching applications and power management in inverter systems. It offers a robust and reliable solution with key advantages including a high drain-source voltage of 65V, a continuous drain current of 140A, and low on-state resistance (RDS(ON)) of 2.4 m (typ.) at VGS = 10V. The device is 100% avalanche tested and available in lead-free, RoHS-compliant versions.
Product Attributes
- Brand: HUAYI
- Origin: China
- Certifications: RoHS Compliant, Lead-Free
- Material: "Green" products meet lead-free and halogen-free requirements.
Technical Specifications
| Model | Package | VDSS (V) | ID (A) | RDS(ON) (m) @ VGS=10V | RDS(ON) (m) @ VGS=4.5V | VGS(th) (V) | PD (W) @ Tc=25C | RJC (C/W) |
|---|---|---|---|---|---|---|---|---|
| HY030N06P | TO-220FB-3L | 65 | 140 | 2.4 (typ.) | 3.7 (typ.) | 1 - 2.5 | 113.6 | 1.1 |
| HY030N06MF | TO-220MF-3L | 65 | 140 | 2.4 (typ.) | 3.7 (typ.) | 1 - 2.5 | 113.6 | 1.1 |
| HY030N06PS | TO-3PS-3L | 65 | 140 | 2.4 (typ.) | 3.7 (typ.) | 1 - 2.5 | 113.6 | 1.1 |
| Parameter | Test Conditions | Min | Typ. | Max | Unit |
|---|---|---|---|---|---|
| Drain-Source Leakage Current (IDSS) | VDS=65V, VGS=0V | - | - | 1 | A |
| TJ=125C | - | - | 50 | A | |
| Drain-Source On-State Resistance (RDS(ON)) | VGS=10V, IDS=40A | - | 2.4 | 2.8 | m |
| VGS=4.5V, IDS=40A | - | 3.7 | 4.5 | m | |
| Diode Forward Voltage (VSD) | ISD=40A, VGS=0V | - | 0.84 | 1.2 | V |
| Reverse Recovery Time (trr) | ISD=40A, dISD/dt=100A/s | - | 43 | - | ns |
| Reverse Recovery Charge (Qrr) | - | - | 50 | - | nC |
| Gate Resistance (RG) | VGS=0V, VDS=0V, F=1MHz | - | 1.35 | - | |
| Input Capacitance (Ciss) | VGS=0V, VDS=25V, Frequency=1.0MHz | - | 5270 | - | pF |
| Output Capacitance (Coss) | - | - | 2350 | - | pF |
| Reverse Transfer Capacitance (Crss) | - | - | 220 | - | pF |
| Turn-on Delay Time (td(ON)) | VDD=30V, RG=25, IDS=10A, VGS=10V | - | 22 | - | ns |
| Turn-on Rise Time (tr) | - | - | 14 | - | ns |
| Turn-off Delay Time (td(OFF)) | - | - | 40 | - | ns |
| Turn-off Fall Time (tf) | - | - | 20 | - | ns |
| Total Gate Charge (Qg) | VDS=50V, VGS=10V, IDS=20A | - | 96 | - | nC |
| Gate-Source Charge (Qgs) | - | - | 11.5 | - | nC |
| Gate-Drain Charge (Qgd) | - | - | 27.2 | - | nC |
2410121912_HUAYI-HY030N06P_C2891581.pdf
Related Products
High surge current fast recovery rectifier diode ZHIDE MURS220 with plastic molded epoxy UL 94V 0 flame retardant
Product OverviewThe MURS220-MURS2100 series are plastic encapsulated epitaxial fast recovery rectifier diodes designed for high-reliability applications. They feature low reverse leakage, high forward surge capability, and are guaranteed for high-temperature soldering (260/10 seconds). The ...
Dual NPN Transistor XZT MMDT3904 in SOT-363 Package Designed for Amplification and Switching Tasks
Product OverviewThe MMDT3904 is a dual NPN transistor in a SOT-363 package. It is constructed using an epitaxial planar die and is ideal for low power amplification and switching applications.Product AttributesBrand: X T ELECTRONICSModel: MMDT3904Package: SOT-363Type: Dual Transistor (NPN+NPN...
YANGJIE MG400HF12MIC2 IGBT module featuring fast switching speeds and low stray inductance for power supplies
Product OverviewThe MG400HF12MIC2 is a high-power IGBT module designed for demanding applications. It features short circuit rating, low stray inductance, and low switching losses, with a VCE(sat) exhibiting a positive temperature coefficient for enhanced reliability. The module offers fast ...
Silicon Carbide Schottky Barrier Diode Wolfspeed E4D20120A 1200 Volt 20 Amp Automotive Grade Device
Product Overview This 4th Generation 1200 V, 20 A Silicon Carbide (SiC) Schottky Barrier diode, designated E4D20120A, offers significant performance advantages over silicon-based solutions. Power electronics systems can achieve higher efficiency standards, reach higher frequencies, and attain ...
Contact Our Experts And Get A Free Consultation!
Our mission is to offer "High Quality" & "Good Service" & "Fast Delivery" to help our clients to gain more profits.
