Low On Resistance Power MOSFET HUAYI HY3210P N Channel Enhancement Mode with RoHS Compliant Materials
Key Attributes
Model Number:
HY3210P
Product Custom Attributes
Drain To Source Voltage:
100V
Current - Continuous Drain(Id):
120A
Operating Temperature -:
-
RDS(on):
8.5mΩ@10V,60A
Gate Threshold Voltage (Vgs(th)):
4V@250uA
Type:
N-Channel
Reverse Transfer Capacitance (Crss@Vds):
508pF
Number:
1 N-channel
Output Capacitance(Coss):
902pF
Input Capacitance(Ciss):
4.922nF
Pd - Power Dissipation:
237W
Gate Charge(Qg):
-
Mfr. Part #:
HY3210P
Package:
TO-220
Product Description
Product Overview
The HY3210P/M/B/PS/PM is an N-Channel Enhancement Mode MOSFET designed for power management in inverter systems and switching applications. It offers reliable and rugged performance with low on-resistance and is available in lead-free and green (RoHS compliant) versions.
Product Attributes
- Brand: HOOYI
- Certifications: RoHS Compliant, Lead Free, Green Devices Available
- Material: Molding compounds/die attach materials and 100% matte tin plate termination finish (for lead-free products)
Technical Specifications
| Model | VDSS (V) | ID (A) @ TC=25C | ID (A) @ TC=100C | RDS(ON) (m) @ VGS=10V | Package |
| HY3210P/M/B/PS/PM | 100 | 120 | 84 | 6.8 (typ.) | TO-3PS-3M, TO-3PS-3L, TO-263-2L, TO-220FB-3M, TO-220FB-3L |
2410121613_HUAYI-HY3210P_C110583.pdf
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