N Channel Enhancement Mode MOSFET HUAYI HY3712B 125V 170A Rating and Low RDS ON for Inverter Systems
Key Attributes
Model Number:
HY3712B
Product Custom Attributes
Drain To Source Voltage:
125V
Current - Continuous Drain(Id):
170A
RDS(on):
7.5mΩ@10V
Gate Threshold Voltage (Vgs(th)):
4V@250uA
Type:
N-Channel
Reverse Transfer Capacitance (Crss@Vds):
509pF
Number:
1 N-channel
Output Capacitance(Coss):
980pF
Input Capacitance(Ciss):
8.162nF
Pd - Power Dissipation:
339W
Gate Charge(Qg):
189nC@10V
Mfr. Part #:
HY3712B
Package:
TO-263-2L
Product Description
Product Overview
The HY3712 is an N-Channel Enhancement Mode MOSFET designed for power management in inverter systems and switching applications. It offers high performance with a 125V/170A rating and a low RDS(ON) of 6.3 m (typ.) at VGS=10V. This device is reliable, rugged, and available in Lead Free and Green (RoHS Compliant) versions.
Product Attributes
- Brand: HUAYI
- Origin: China
- Certifications: RoHS Compliant, Lead Free
Technical Specifications
| Part Number | Package | VDSS (V) | ID (A) | RDS(ON) (m) @ VGS=10V | EAS (mJ) | VGS(th) (V) | Qg (nC) |
| HY3712P/M/B/PS/PM | TO-220FB-3L | 125 | 170 (TC=25C) / 124 (TC=100C) | 6.3 (typ.) | 585** | 2.0 - 4.0 | 189 |
| HY3712P/M/B/PS/PM | TO-220FB-3S | 125 | 170 (TC=25C) / 124 (TC=100C) | 6.3 (typ.) | 585** | 2.0 - 4.0 | 189 |
| HY3712P/M/B/PS/PM | TO-263-2L | 125 | 170 (TC=25C) / 124 (TC=100C) | 6.3 (typ.) | 585** | 2.0 - 4.0 | 189 |
| HY3712P/M/B/PS/PM | TO-3PS-3L | 125 | 170 (TC=25C) / 124 (TC=100C) | 6.3 (typ.) | 585** | 2.0 - 4.0 | 189 |
| HY3712P/M/B/PS/PM | TO-3PM-3S | 125 | 170 (TC=25C) / 124 (TC=100C) | 6.3 (typ.) | 585** | 2.0 - 4.0 | 189 |
2410121713_HUAYI-HY3712B_C2688728.pdf
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