Durable Power MOSFET HUAYI HYG055N10NS1P with 100V Drain Source Voltage and Halogen Free Construction
Key Attributes
Model Number:
HYG055N10NS1P
Product Custom Attributes
Drain To Source Voltage:
100V
Current - Continuous Drain(Id):
130A
RDS(on):
4.3mΩ@10V,50A
Operating Temperature -:
-55℃~+175℃
Gate Threshold Voltage (Vgs(th)):
2V
Reverse Transfer Capacitance (Crss@Vds):
165pF
Number:
1 N-channel
Input Capacitance(Ciss):
4.148nF
Pd - Power Dissipation:
187.5W
Gate Charge(Qg):
82nC@10V
Mfr. Part #:
HYG055N10NS1P
Package:
TO-220FB-3L
Product Description
Product Overview
The HYG055N10NS1P/B is a single N-Channel Enhancement Mode MOSFET designed for switching applications and power management in inverter systems. It features high performance with a low on-state resistance (RDS(ON) = 4.3 m typ. @ VGS = 10V), 100V drain-source voltage, and 130A continuous drain current. The device is 100% avalanche tested, offering reliability and ruggedness. Halogen-free and RoHS compliant devices are available.
Product Attributes
- Brand: HYM
- Origin: China
- Certifications: RoHS Compliant, Halogen-Free Available
Technical Specifications
| Parameter | Symbol | Test Conditions | Min | Typ. | Max | Unit |
| Absolute Maximum Ratings | ||||||
| Drain-Source Voltage | VDSS | Tc=25C | 100 | V | ||
| Gate-Source Voltage | VGSS | ±20 | V | |||
| Junction Temperature Range | TJ | -55 | 175 | °C | ||
| Storage Temperature Range | TSTG | -55 | 175 | °C | ||
| Source Current-Continuous (Body Diode) | IS | Tc=25°C, Mounted on Large Heat Sink | 130 | A | ||
| Pulsed Drain Current | IDM | Tc=25°C | 390 | A | ||
| Continuous Drain Current | ID | Tc=25°C | 130 | A | ||
| Tc=100°C | 91.8 | A | ||||
| Maximum Power Dissipation | PD | Tc=25°C | 187.5 | W | ||
| Tc=100°C | 93.7 | W | ||||
| Thermal Resistance, Junction-to-Case | RθJC | 0.8 | °C/W | |||
| Thermal Resistance, Junction-to-Ambient | RθJA | Surface mounted on 1in² FR-4 board. | 62.5 | °C/W | ||
| Single Pulsed Avalanche Energy | EAS | L=0.3mH, Limited by TJmax, starting TJ=25°C, L = 0.3mH, RG= 25Ω, VGS =10V. | 389 | mJ | ||
| Electrical Characteristics (Tc =25°C Unless Otherwise Noted) | ||||||
| Drain-Source Breakdown Voltage | BVDSS | VGS=0V,IDS= 250μA | 100 | - | - | V |
| Drain-to-Source Leakage Current | IDSS | VDS=100V,VGS=0V | - | - | 1 | μA |
| TJ=125°C | - | - | 50 | μA | ||
| Gate Threshold Voltage | VGS(th) | VDS=VGS, IDS= 250μA | 2 | 3 | 4 | V |
| Gate-Source Leakage Current | IGSS | VGS=±20V,VDS=0V | - | - | ±100 | nA |
| Drain-Source On-State Resistance | RDS(ON) | VGS= 10V,IDS=50A | - | 4.3 | 5.5 | mΩ |
| Diode Characteristics | ||||||
| Diode Forward Voltage | VSD | ISD=50A,VGS=0V | - | 0.89 | 1.3 | V |
| Reverse Recovery Time | trr | ISD=50A,dISD/dt=100A/μs | - | 58 | - | ns |
| Reverse Recovery Charge | Qrr | - | 101 | - | nC | |
| Dynamic Characteristics | ||||||
| Gate Resistance | RG | VGS=0V,VDS=0V,F=1MHz | - | 2.3 | - | Ω |
| Input Capacitance | Ciss | VGS=0V, VDS= 25V, Frequency=1.0MHz | - | 4148 | - | pF |
| Output Capacitance | Coss | - | 1468 | - | pF | |
| Reverse Transfer Capacitance | Crss | - | 165 | - | pF | |
| Turn-on Delay Time | td(ON) | VDD= 50V,RG=4.0Ω, IDS= 50A,VGS= 10V | - | 21 | - | ns |
| Turn-on Rise Time | Tr | - | 95 | - | ns | |
| Turn-off Delay Time | td(OFF) | - | 63 | - | ns | |
| Turn-off Fall Time | Tf | - | 89 | - | ns | |
| Gate Charge Characteristics | ||||||
| Total Gate Charge | Qg | VDS =80V, VGS=10V,IDs=50A | - | 82 | - | nC |
| Gate-Source Charge | Qgs | - | 24 | - | nC | |
| Gate-Drain Charge | Qgd | - | 26 | - | nC | |
2411220642_HUAYI-HYG055N10NS1P_C5121326.pdf
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