85V 135A N Channel Enhancement Mode MOSFET HUAYI HYG054N09NS1P Low On Resistance for Switching
Key Attributes
Model Number:
HYG054N09NS1P
Product Custom Attributes
Drain To Source Voltage:
85V
Current - Continuous Drain(Id):
135A
Operating Temperature -:
-55℃~+175℃
RDS(on):
5.8mΩ@10V
Gate Threshold Voltage (Vgs(th)):
4V@250uA
Type:
N-Channel
Reverse Transfer Capacitance (Crss@Vds):
59pF
Number:
1 N-channel
Output Capacitance(Coss):
669pF
Input Capacitance(Ciss):
5.067nF
Pd - Power Dissipation:
187.5W
Gate Charge(Qg):
88.5nC@10V
Mfr. Part #:
HYG054N09NS1P
Package:
TO-220FB-3
Product Description
HYG054N09NS1P/B N-Channel Enhancement Mode MOSFET
The HYG054N09NS1P/B is an N-Channel Enhancement Mode MOSFET designed for switching applications and motor control. It features a high current capability of 85V/135A with a low on-resistance of 4.8m (typ.) at VGS = 10V. This device is 100% avalanche tested, ensuring reliability and ruggedness. Lead-free and green devices are available, compliant with RoHS standards.
Product Attributes
- Brand: HYMSEXA
- Origin: China
- Material: Lead-Free and Green Devices Available (RoHS Compliant)
- Certifications: RoHS Compliant, IPC/JEDEC J-STD-020 for MSL classification
Technical Specifications
| Parameter | Test Conditions | Min | Typ. | Max | Unit |
|---|---|---|---|---|---|
| Absolute Maximum Ratings | |||||
| Drain-Source Voltage (VDSS) | Tc=25C Unless Otherwise Noted | - | - | 85 | V |
| Gate-Source Voltage (VGSS) | - | - | 20 | V | |
| Junction Temperature Range (TJ) | -55 | - | 175 | C | |
| Storage Temperature Range (TSTG) | -55 | - | 175 | C | |
| Source Current-Continuous (IS) | Tc=25C, Mounted on Large Heat Sink | - | - | 135 | A |
| Pulsed Drain Current (IDM) | Tc=25C | - | - | 420 | A |
| Continuous Drain Current (ID) | Tc=25C | - | - | 135 | A |
| Continuous Drain Current (ID) | Tc=100C | - | - | 96 | A |
| Maximum Power Dissipation (PD) | Tc=25C | - | - | 187.5 | W |
| Maximum Power Dissipation (PD) | Tc=100C | - | - | 93.7 | W |
| Thermal Resistance, Junction-to-Case (RJC) | - | 0.8 | - | C/W | |
| Thermal Resistance, Junction-to-Ambient (RJA) | ** Surface mounted on 1in FR-4 board. | - | 62.5 | - | C/W |
| Single Pulsed-Avalanche Energy (EAS) | *** L=0.3mH, Limited by TJmax, starting TJ=25C, RG=25,VGS=10V. | - | 420 | - | mJ |
| Electrical Characteristics | |||||
| Drain-Source Breakdown Voltage (BVDSS) | VGS=0V,IDS= 250A | 85 | - | - | V |
| Drain-to-Source Leakage Current (IDSS) | VDS=85V,VGS=0V | - | - | 1 | A |
| Drain-to-Source Leakage Current (IDSS) | TJ=125C | - | - | 50 | A |
| Gate Threshold Voltage (VGS(th)) | VDS=VGS, IDS= 250A | 2 | 3 | 4 | V |
| Gate-Source Leakage Current (IGSS) | VGS=20V,VDS=0V | - | - | 100 | nA |
| Drain-Source On-State Resistance (RDS(ON)) | VGS= 10V,IDS= 50A | - | 4.8 | 5.8 | m |
| Diode Characteristics | |||||
| Diode Forward Voltage (VSD) | ISD=50A,VGS=0V | - | 0.9 | 1.2 | V |
| Reverse Recovery Time (trr) | ISD=50A,dISD/dt=100A/s | - | 55 | - | ns |
| Reverse Recovery Charge (Qrr) | - | 94 | - | nC | |
| Dynamic Characteristics | |||||
| Gate Resistance (RG) | VGS=0V,VDS=0V,F=1MHz | - | 3.6 | - | |
| Input Capacitance (Ciss) | VGS=0V, VDS= 40V, Frequency=1.0MHz | - | 5067 | - | pF |
| Output Capacitance (Coss) | - | 699 | - | pF | |
| Reverse Transfer Capacitance (Crss) | - | 59 | - | pF | |
| Turn-on Delay Time (td(ON)) | VDD= 40V,RG=4, IDS=50A,VGS= 10V | - | 22 | - | ns |
| Turn-on Rise Time (Tr) | - | 96 | - | ns | |
| Turn-off Delay Time (td(OFF)) | - | 75 | - | ns | |
| Turn-off Fall Time (Tf) | - | 105 | - | ns | |
| Gate Charge Characteristics | |||||
| Total Gate Charge (Qg) | VDS = 68V, VGS= 10V, IDs= 50A | - | 88.5 | - | nC |
| Gate-Source Charge (Qgs) | - | 27.3 | - | nC | |
| Gate-Drain Charge (Qgd) | - | 23.7 | - | nC | |
2409302203_HUAYI-HYG054N09NS1P_C2841916.pdf
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