Switching MOSFET HUAYI HYG035N08NS2C2 N Channel Enhancement Mode with RoHS and Halogen Free Material
Key Attributes
Model Number:
HYG035N08NS2C2
Product Custom Attributes
Drain To Source Voltage:
80V
Current - Continuous Drain(Id):
105A
Operating Temperature -:
-55℃~+175℃
RDS(on):
3.5mΩ@10V
Gate Threshold Voltage (Vgs(th)):
4V@250uA
Type:
N-Channel
Reverse Transfer Capacitance (Crss@Vds):
153pF
Number:
1 N-channel
Output Capacitance(Coss):
1.95nF
Input Capacitance(Ciss):
3.62nF
Pd - Power Dissipation:
83.3W
Gate Charge(Qg):
75nC@10V
Mfr. Part #:
HYG035N08NS2C2
Package:
DFN5x6-8
Product Description
Product Overview
The HYG035N08NS2C2 is an N-Channel Enhancement Mode MOSFET from Huayi Microelectronics, designed for switching applications and power management in inverter systems. It features a low on-resistance of 2.8 m (typ.) at VGS = 10V, 100% avalanche tested, and a reliable, rugged design. Halogen-free and RoHS compliant devices are available.
Product Attributes
- Brand: Huayi Microelectronics
- Origin: China
- Material: Halogen-Free (RoHS Compliant)
- Certifications: RoHS Compliant, J-STD-020 MSL Classification
Technical Specifications
| Parameter | Conditions | Unit | Min | Typ. | Max | |
| Absolute Maximum Ratings | ||||||
| Drain-Source Voltage (VDSS) | V | 80 | ||||
| Gate-Source Voltage (VGSS) | V | 20 | ||||
| Junction Temperature Range (TJ) | C | -55 | 175 | |||
| Storage Temperature Range (TSTG) | C | -55 | 175 | |||
| Source Current-Continuous (IS) | Tc=25C, Mounted on Large Heat Sink | A | 105 | |||
| Pulsed Drain Current (IDM) | Tc=25C | A | 420 | |||
| Continuous Drain Current (ID) | Tc=25C | A | 105 | |||
| Continuous Drain Current (ID) | Tc=100C | A | 74.2 | |||
| Maximum Power Dissipation (PD) | Tc=25C | W | 83.3 | |||
| Maximum Power Dissipation (PD) | Tc=100C | W | 41.7 | |||
| Thermal Resistance, Junction-to-Case (RJC) | C/W | 1.8 | ||||
| Thermal Resistance, Junction-to-Ambient (RJA) | Surface mounted on 1in FR-4 board | C/W | 45 | |||
| Single Pulsed-Avalanche Energy (EAS) | L=0.3mH, Limited by TJmax, starting TJ=25C, RG=25, VGS=10V | mJ | 330 | |||
| Static Characteristics | ||||||
| Drain-Source Breakdown Voltage (BVDSS) | VGS=0V, IDS= 250A | V | 80 | - | - | |
| Drain-to-Source Leakage Current (IDSS) | VDS= 80V,VGS=0V | A | - | 1 | ||
| Drain-to-Source Leakage Current (IDSS) | VDS= 80V,VGS=0V, TJ=125C | A | - | 50 | ||
| Gate Threshold Voltage (VGS(th)) | VDS=VGS, IDS= 250A | V | 2 | 3 | 4 | |
| Gate-Source Leakage Current (IGSS) | VGS=20V,VDS=0V | nA | - | 100 | ||
| Drain-Source On-State Resistance (RDS(ON)) | VGS= 10V,IDS=20A | m | 2.8 | 3.5 | ||
| Diode Characteristics | ||||||
| Diode Forward Voltage (VSD) | ISD=20A,VGS=0V | V | 0.81 | 1.2 | ||
| Reverse Recovery Time (trr) | ISD=20A,dISD/dt=100A/s | ns | 51 | - | ||
| Reverse Recovery Charge (Qrr) | nC | 63 | - | |||
| Dynamic Characteristics | ||||||
| Gate Resistance (RG) | VGS=0V,VDS=0V,F=1MHz | 1.9 | - | |||
| Input Capacitance (Ciss) | VGS=0V, VDS= 25V, Frequency=1.0MHz | pF | 3620 | - | ||
| Output Capacitance (Coss) | VGS=0V, VDS= 25V, Frequency=1.0MHz | pF | 1950 | - | ||
| Reverse Transfer Capacitance (Crss) | VGS=0V, VDS= 25V, Frequency=1.0MHz | pF | 153 | - | ||
| Turn-on Delay Time (td(ON)) | VDD= 40V,RG=4.0, IDS= 20A,VGS= 10V | ns | 18.6 | - | ||
| Turn-on Rise Time (Tr) | VDD= 40V,RG=4.0, IDS= 20A,VGS= 10V | ns | 45 | - | ||
| Turn-off Delay Time (td(OFF)) | VDD= 40V,RG=4.0, IDS= 20A,VGS= 10V | ns | 42 | - | ||
| Turn-off Fall Time (Tf) | VDD= 40V,RG=4.0, IDS= 20A,VGS= 10V | ns | 43 | - | ||
| Gate Charge Characteristics | ||||||
| Total Gate Charge (Qg) | VDS = 64V, VGS= 10V, IDs= 20A | nC | 75 | - | ||
| Gate-Source Charge (Qgs) | VDS = 64V, VGS= 10V, IDs= 20A | nC | 18.6 | - | ||
| Gate-Drain Charge (Qgd) | VDS = 64V, VGS= 10V, IDs= 20A | nC | 27 | - | ||
2410121251_HUAYI-HYG035N08NS2C2_C3011226.pdf
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