Low on resistance N Channel MOSFET HUAYI HYG068N08NR1P ideal for power management and inverter systems
Key Attributes
Model Number:
HYG068N08NR1P
Product Custom Attributes
Drain To Source Voltage:
80V
Current - Continuous Drain(Id):
160A
Operating Temperature -:
-55℃~+175℃
RDS(on):
7.5mΩ@10V
Gate Threshold Voltage (Vgs(th)):
4V@250uA
Type:
N-Channel
Reverse Transfer Capacitance (Crss@Vds):
231pF
Number:
1 N-channel
Input Capacitance(Ciss):
3.722nF
Pd - Power Dissipation:
268W
Gate Charge(Qg):
84nC
Mfr. Part #:
HYG068N08NR1P
Package:
TO-220FB-3
Product Description
Product Overview
The HYG068N08NR1P is an N-Channel Enhancement Mode MOSFET designed for power management applications. It features high performance with low on-resistance (RDS(ON)= 6m typ. @ VGS = 10V), 100% avalanche tested for reliability, and is available in lead-free (RoHS Compliant) devices. This MOSFET is suitable for inverter systems, electric vehicle controllers, lithium battery protection boards, and general switching applications.
Product Attributes
- Brand: HYG (HUAYI)
- Material: Lead-Free Devices Available (RoHS Compliant)
- Certifications: RoHS Compliant, Halogen Free
Technical Specifications
| Symbol | Parameter | Test Conditions | Min | Typ. | Max | Unit |
| Absolute Maximum Ratings | ||||||
| VDSS | Drain-Source Voltage | - | - | 80 | V | |
| VGSS | Gate-Source Voltage | - | - | 25 | V | |
| TJ | Maximum Junction Temperature | -55 | - | 175 | C | |
| TSTG | Storage Temperature Range | -55 | - | 175 | C | |
| IS | Source Current-Continuous(Body Diode) | Tc=25C | - | - | 160 | A |
| IDM | Pulsed Drain Current * | Tc=25C | - | - | 380 | A |
| ID | Continuous Drain Current | Tc=25C | - | - | 160 | A |
| ID | Continuous Drain Current | Tc=100C | - | - | 113 | A |
| PD | Maximum Power Dissipation | Tc=25C | - | - | 268 | W |
| PD | Maximum Power Dissipation | Tc=100C | - | - | 134 | W |
| RJC | Thermal Resistance, Junction-to-Case | - | 0.56 | - | C/W | |
| RJA | Thermal Resistance, Junction-to-Ambient ** | - | 62.5 | - | C/W | |
| EAS | Single Pulsed-Avalanche Energy *** | L=0.3 mH | - | 606 | - | mJ |
| Electrical Characteristics (Static) | ||||||
| BVDSS | Drain-Source Breakdown Voltage | VGS=0V,IDS= 250A | 80 | - | - | V |
| IDSS | Drain-to-Source Leakage Current | VDS= 80V,VGS=0V | - | - | 1 | A |
| IDSS | Drain-to-Source Leakage Current | TJ=125C | - | - | 50 | A |
| VGS(th) | Gate Threshold Voltage | VDS=VGS, IDS= 250A | 2 | 3 | 4 | V |
| IGSS | Gate-Source Leakage Current | VGS=25V,VDS=0V | - | - | 100 | nA |
| RDS(ON) | Drain-Source On-State Resistance | VGS= 10V,IDS= 60A | - | 6 | 7.5 | m |
| Diode Characteristics | ||||||
| VSD | Diode Forward Voltage | ISD=60A,VGS=0V | - | 0.9 | 1.2 | V |
| trr | Reverse Recovery Time | ISD=60A,dISD/dt=100A/s | - | 28 | - | ns |
| Qrr | Reverse Recovery Charge | - | 50 | - | nC | |
| Electrical Characteristics (Dynamic) | ||||||
| RG | Gate Resistance | VGS=0V,VDS=0V,F=1MHz | - | 2.32 | - | |
| Ciss | Input Capacitance | VGS=0V, VDS= 25V, Frequency=1.0MHz | - | 3722 | - | pF |
| Coss | Output Capacitance | - | 566 | - | pF | |
| Crss | Reverse Transfer Capacitance | - | 231 | - | pF | |
| td(ON) | Turn-on Delay Time | VDD= 40V,RG=6, IDS= 60A,VGS= 10V | - | 26 | - | ns |
| Tr | Turn-on Rise Time | - | 38 | - | ns | |
| td(OFF) | Turn-off Delay Time | - | 40 | - | ns | |
| Tf | Turn-off Fall Time | - | 52 | - | ns | |
| Gate Charge Characteristics | ||||||
| Qg | Total Gate Charge | VDS = 64V, VGS= 10V, IDs= 30A | - | 84 | - | nC |
| Qgs | Gate-Source Charge | - | 12 | - | nC | |
| Qgd | Gate-Drain Charge | - | 33 | - | nC | |
2410121321_HUAYI-HYG068N08NR1P_C2830700.pdf
Related Products
NPN General Purpose Amplifier YANGJIE MMBT2222AT SOT523 Package RoHS Compliant Electronic Component
Product OverviewThe MMBT2222AT is an NPN General Purpose Amplifier in a SOT-523 surface mount package, ideally suited for automatic insertion. It offers a moisture sensitivity level of 1 and meets UL-94 V-0 flammability rating, being halogen-free. This component is designed for general-purpose ...
Switching amplifier NPN transistor YONGYUTAI 2N3904 epitaxial planar type with 100 milliamps collector current rating
Product OverviewNPN silicon epitaxial planar transistor designed for switching and amplifier applications. It is recommended as a complementary type to the PNP transistor 2N3906. This transistor is also available in the SOT-23 case under the type designation MMBT3904.Product AttributesBrand: Not ...
Dual NPN Transistor XZT MMDT3904 in SOT-363 Package Designed for Amplification and Switching Tasks
Product OverviewThe MMDT3904 is a dual NPN transistor in a SOT-363 package. It is constructed using an epitaxial planar die and is ideal for low power amplification and switching applications.Product AttributesBrand: X T ELECTRONICSModel: MMDT3904Package: SOT-363Type: Dual Transistor (NPN+NPN...
Surface mount digital transistor YANGJIE DTC123YUA with built-in resistors and UL94 V0 flammability rating
Product OverviewThe DTC123YUA is a digital transistor with built-in resistors, designed for surface mount applications. It simplifies circuit configuration by eliminating the need for external input resistors, making it ideal for inverter circuits. The epoxy meets UL-94 V-0 flammability rating and ...
Contact Our Experts And Get A Free Consultation!
Our mission is to offer "High Quality" & "Good Service" & "Fast Delivery" to help our clients to gain more profits.
