N Channel MOSFET HYG023N03LR1D with 30 Volt Drain Source Voltage and 226 Millijoule Avalanche Energy
Key Attributes
Model Number:
HYG023N03LR1D
Product Custom Attributes
Drain To Source Voltage:
30V
Current - Continuous Drain(Id):
110A
Operating Temperature -:
-55℃~+175℃
RDS(on):
3.4mΩ@4.5V
Gate Threshold Voltage (Vgs(th)):
3V@250uA
Type:
N-Channel
Reverse Transfer Capacitance (Crss@Vds):
462pF
Number:
1 N-channel
Output Capacitance(Coss):
561pF
Input Capacitance(Ciss):
4.71nF
Pd - Power Dissipation:
62.5W
Gate Charge(Qg):
93nC@10V
Mfr. Part #:
HYG023N03LR1D
Package:
TO-252-2L
Product Description
Product Overview
The HYG023N03LR1 is an N-Channel Enhancement Mode MOSFET designed for switching applications and power management in DC/DC converters. It offers high performance with a low on-resistance of 2.1m (typ.) at VGS = 10V and 2.7m (typ.) at VGS = 4.5V. This device is 100% avalanche tested, reliable, rugged, and available in Halogen Free and Green (RoHS Compliant) versions.
Product Attributes
- Brand: HYG (Huayi Microelectronics)
- Material: Halogen Free and Green Devices Available (RoHS Compliant)
- Certifications: RoHS Compliant
Technical Specifications
| Model | Package | VDS (V) | ID (A) | RDS(ON) (m) @ VGS=10V | RDS(ON) (m) @ VGS=4.5V | Avalanche Energy (mJ) |
| HYG023N03LR1D | TO-252-2L | 30 | 110 | 2.1 (typ.) | 2.7 (typ.) | 226 (typ.) |
| HYG023N03LR1U | TO-251-3L | 30 | 110 | 2.1 (typ.) | 2.7 (typ.) | 226 (typ.) |
| HYG023N03LR1V | TO-251-3S | 30 | 110 | 2.1 (typ.) | 2.7 (typ.) | 226 (typ.) |
2410121713_HUAYI-HYG023N03LR1D_C2827230.pdf
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