N Channel MOSFET HUAYI HYG080N10LS1D 100V 62A Low On Resistance Suitable for High Frequency Circuits
Key Attributes
Model Number:
HYG080N10LS1D
Product Custom Attributes
Drain To Source Voltage:
100V
Current - Continuous Drain(Id):
62A
Operating Temperature -:
-55℃~+175℃
RDS(on):
13.3mΩ@4.5V
Gate Threshold Voltage (Vgs(th)):
3V@250uA
Type:
N-Channel
Reverse Transfer Capacitance (Crss@Vds):
62pF
Number:
1 N-channel
Output Capacitance(Coss):
766pF
Input Capacitance(Ciss):
2.108nF
Pd - Power Dissipation:
72W
Gate Charge(Qg):
34.2nC@10V
Mfr. Part #:
HYG080N10LS1D
Package:
TO-252-2L
Product Description
HYG080N10LS1D Single N-Channel Enhancement Mode MOSFET
The HYG080N10LS1D is a high-performance, single N-channel enhancement mode MOSFET designed for demanding applications. It features a 100V/62A rating, low on-state resistance (RDS(ON) of 7.6m typ. @ VGS=10V), and 100% avalanche tested for reliability. This rugged device is suitable for high-frequency point-of-load synchronous buck converters.
Product Attributes
- Brand: HUAYI
- Package Type: TO-252-2L
- Material Compliance: Halogen-Free (RoHS Compliant), Lead-Free
- Certifications: RoHS Compliant, IPC/JEDEC J-STD-020 (MSL Classification)
Technical Specifications
| Parameter | Test Conditions | Min | Typ. | Max | Unit |
| Absolute Maximum Ratings | |||||
| Drain-Source Voltage (VDSS) | 100 | V | |||
| Gate-Source Voltage (VGSS) | ±20 | V | |||
| Junction Temperature (TJ) | -55 | 175 | °C | ||
| Storage Temperature Range (TSTG) | -55 | 175 | °C | ||
| Source Current-Continuous (IS) | Tc=25°C, Mounted on Large Heat Sink | 62 | A | ||
| Pulsed Drain Current (IDM) | Tc=25°C | 220 | A | ||
| Continuous Drain Current (ID) | Tc=25°C | 62 | A | ||
| Continuous Drain Current (ID) | Tc=100°C | 44 | A | ||
| Maximum Power Dissipation (PD) | Tc=25°C | 72 | W | ||
| Maximum Power Dissipation (PD) | Tc=100°C | 36 | W | ||
| Thermal Resistance, Junction-to-Case (RJC) | 2.1 | °C/W | |||
| Thermal Resistance, Junction-to-Ambient (RJA) | Surface mounted on FR-4 board | 110 | °C/W | ||
| Single-Pulsed-Avalanche Energy (EAS) | L=0.3mH | 130 | mJ | ||
| Electrical Characteristics | |||||
| Drain-Source Breakdown Voltage (BVDSS) | VGS=0V, IDS=250μA | 100 | - | - | V |
| Drain-to-Source Leakage Current (IDSS) | VDS=100V,VGS=0V | - | - | 1 | μA |
| Drain-to-Source Leakage Current (IDSS) | TJ=100°C | - | - | 50 | μA |
| Gate Threshold Voltage (VGS(th)) | VDS=VGS, IDS=250μA | 1.0 | 2.1 | 3.0 | V |
| Gate-Source Leakage Current (IGSS) | VGS=±20V,VDS=0V | - | - | ±100 | nA |
| Drain-Source On-State Resistance (RDS(ON)) | VGS=10V,IDS=20A | - | 7.6 | 9.1 | mΩ |
| Drain-Source On-State Resistance (RDS(ON)) | VGS=4.5V,IDS=20A | - | 11.1 | 13.3 | mΩ |
| Diode Forward Voltage (VSD) | ISD=20A,VGS=0V | - | 0.86 | 1.3 | V |
| Reverse Recovery Time (trr) | ISD=20A,dISD/dt=100A/μs | - | 41.9 | - | ns |
| Reverse Recovery Charge (Qrr) | - | 51.9 | - | nC | |
| Gate Resistance (RG) | VGS=0V,VDS=0V,F=1MHz | - | 2.7 | - | Ω |
| Input Capacitance (Ciss) | VGS=0V, VDS=25V, Frequency=1.0MHz | - | 2108 | - | pF |
| Output Capacitance (Coss) | - | 766 | - | pF | |
| Reverse Transfer Capacitance (Crss) | - | 62 | - | pF | |
| Turn-on Delay Time (td(ON)) | VDD=50V,RG=2.5Ω, IDS=20A,VGS=10V | - | 10.3 | - | ns |
| Turn-on Rise Time (Tr) | - | 29.0 | - | ns | |
| Turn-off Delay Time (td(OFF)) | - | 29.3 | - | ns | |
| Turn-off Fall Time (Tf) | - | 54.6 | - | ns | |
| Total Gate Charge (Qg(10V)) | VDS =80V, VGS=10V, ID=20A | - | 34.2 | - | nC |
| Total Gate Charge (Qg(4.5V)) | - | 17.4 | - | nC | |
| Gate-Source Charge (Qgs) | - | 8.8 | - | nC | |
| Gate-Drain Charge (Qgd) | - | 7.4 | - | nC | |
2410121306_HUAYI-HYG080N10LS1D_C2827245.pdf
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