N Channel Enhancement Mode MOSFET HUAYI HY3704B with 120 Amp Continuous Drain Current at 100 Celsius
Key Attributes
Model Number:
HY3704B
Product Custom Attributes
Drain To Source Voltage:
40V
Current - Continuous Drain(Id):
176A
RDS(on):
3.6mΩ@10V
Gate Threshold Voltage (Vgs(th)):
4V@250uA
Type:
N-Channel
Reverse Transfer Capacitance (Crss@Vds):
-
Number:
-
Input Capacitance(Ciss):
-
Pd - Power Dissipation:
192W
Gate Charge(Qg):
122nC@10V
Mfr. Part #:
HY3704B
Package:
TO-263-2
Product Description
Product Overview
The HY3704P/B is an N-Channel Enhancement Mode MOSFET designed for switching applications and power management in DC/DC converters. It offers high reliability, ruggedness, and is available in lead-free and green (RoHS compliant) options. The device is 100% avalanche tested, ensuring robust performance.
Product Attributes
- Brand: HUAYI
- Origin: China
- Certifications: RoHS Compliant, Lead Free, Green Devices Available
- Material: Molding compounds/die attach materials and 100% matte tin plate Termination finish (Lead Free Products)
Technical Specifications
| Feature | HY3704P/B |
|---|---|
| N-Channel Enhancement Mode MOSFET | Yes |
| Drain-Source Voltage (VDSS) | 40V |
| Continuous Drain Current (ID) @ TC=25C | 176A |
| Continuous Drain Current (ID) @ TC=100C | 120A |
| RDS(ON) typ. @ VGS=10V | 0.78 m |
| Gate-Source Voltage (VGS) | 20V |
| Maximum Junction Temperature (TJ) | 175C |
| Storage Temperature Range (TSTG) | -55 to 175C |
| Maximum Power Dissipation (PD) @ TC=25C | 192W |
| Maximum Power Dissipation (PD) @ TC=100C | 96W |
| Thermal Resistance-Junction to Case (RJC) | 0.78 C/W |
| Thermal Resistance-Junction to Ambient (RJA) | 62.5 C/W |
| Package Types | TO-220FB-3L, TO-263-2L |
| Gate Threshold Voltage (VGS(th)) | 2.0 - 4.0V (typ. 3.0V) |
| Input Capacitance (Ciss) | 4427 pF |
| Output Capacitance (Coss) | 1028 pF |
| Reverse Transfer Capacitance (Crss) | 538 pF |
| Total Gate Charge (Qg) | 122 nC |
| Gate-Source Charge (Qgs) | 29 nC |
| Gate-Drain Charge (Qgd) | 35 nC |
| Diode Forward Voltage (VSD) @ ISD=88A | 0.8 - 1.2V (typ. 0.8V) |
| Reverse Recovery Time (trr) | 28 ns |
| Reverse Recovery Charge (Qrr) | 51 nC |
2411220120_HUAYI-HY3704B_C2827226.pdf
Related Products
N Channel Enhancement Mode MOSFET YANGJIE YJG130G04CQ Ideal for Power Switching and DC DC Conversion
Product OverviewThe YJG130G04CQ is an N-Channel Enhancement Mode Field Effect Transistor from Yangzhou Yangjie Electronic Technology Co., Ltd. It features split gate trench MOSFET technology, a high-density cell design for low RDS(ON), and an excellent package for heat dissipation. This transistor ...
power switching device XCH XCH6003 trenched N channel MOSFET with low gate charge and fast switching
Product OverviewThe XCH6003 is a high cell density trenched N-channel MOSFET designed for efficient power switching applications. It offers excellent RDS(ON) and efficiency, making it suitable for most low-power switching and load switch applications. This device features super low gate charge and ...
High speed switching transistor YANGJIE DGP15N65CTL designed for hard and soft switching applications
Product OverviewThe DGP15N65CTL0 is a high-speed smooth switching IGBT discrete device designed for hard and soft switching applications. It features a maximum junction temperature of 175, a positive temperature coefficient, and high ruggedness with temperature stability. This IGBT is suitable for ...
YANGJIE DTC144EUAQ NPN Digital Transistor with Built in Resistors Providing Performance in Compact Packages
Product OverviewThe DTC144EUAQ is an NPN Digital Transistor with built-in resistors, designed to simplify circuit design by eliminating the need for external input resistors. It is ideal for configuring inverter circuits and offers easy setup for on/off conditions, reducing component count and board ...
Contact Our Experts And Get A Free Consultation!
Our mission is to offer "High Quality" & "Good Service" & "Fast Delivery" to help our clients to gain more profits.
