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quality Low RDS ON P Channel MOSFET HUAYI HYG260P03LR1S Designed for Battery Protection and Power Switching factory
quality Low RDS ON P Channel MOSFET HUAYI HYG260P03LR1S Designed for Battery Protection and Power Switching factory

Low RDS ON P Channel MOSFET HUAYI HYG260P03LR1S Designed for Battery Protection and Power Switching

Key Attributes
Model Number: HYG260P03LR1S
Product Custom Attributes
Drain To Source Voltage:
30V
Current - Continuous Drain(Id):
8A
Operating Temperature -:
-55℃~+175℃
RDS(on):
30mΩ@10V
Gate Threshold Voltage (Vgs(th)):
3V@250uA
Type:
P-Channel
Reverse Transfer Capacitance (Crss@Vds):
86pF
Number:
-
Output Capacitance(Coss):
120pF
Input Capacitance(Ciss):
1.21nF
Pd - Power Dissipation:
3W
Gate Charge(Qg):
18.5nC@10V
Mfr. Part #:
HYG260P03LR1S
Package:
SOP-8
Product Description

Product Overview

The HYG260P03LR1S is a P-Channel Enhancement Mode MOSFET designed for power management and switching applications. It features a low RDS(ON) of 21.6m (typ.) at VGS = -10V and 42m (typ.) at VGS = -4.5V. This device is 100% avalanche tested, reliable, rugged, and available in Halogen Free and Green (RoHS Compliant) versions. Applications include DC/DC power management and battery protection.

Product Attributes

  • Brand: HYG (HUAYI)
  • Origin: China
  • Material: Halogen Free and Green Devices Available (RoHS Compliant)
  • Certifications: RoHS Compliant

Technical Specifications

ParameterSymbolTest ConditionsMinTyp.MaxUnit
Drain-Source Breakdown VoltageBVDSSVGS=0V,IDS=-250uA-30--V
Drain-to-Source Leakage CurrentIDSSVDS=-30V, VGS=0V--1A
Drain-to-Source Leakage CurrentIDSSTJ=125C--50A
Gate Threshold VoltageVGS(th)VDS=VGS, IDS=-250uA-1.0-1.9-3.0V
Gate-Source Leakage CurrentIGSSVGS=20V,VDS=0V--100nA
Drain-Source On-State ResistanceRDS(ON)VGS=-10V,IDS=-6A-21.630m
Drain-Source On-State ResistanceRDS(ON)VGS=-4.5V,IDS=-4A-4255m
Diode Forward VoltageVSDISD=-1A,VGS=0V---0.7V
Reverse Recovery TimetrrISD=-3A,dISD/dt=100A/us-29-ns
Reverse Recovery ChargeQrr--12-nC
Gate ResistanceRGVGS=0V,VDS=0V, Frequency=1.0MHz-8.5-
Input CapacitanceCissVGS=0V, VDS=-25V, Frequency=1.0MHz-1210-pF
Output CapacitanceCoss--120-pF
Reverse Transfer CapacitanceCrss--86-pF
Turn-on Delay Timetd(ON)VDD=-15V,RG=1, IDS=-3A,VGS=-10V-8-ns
Turn-on Rise TimeTr--5-ns
Turn-off Delay Timetd(OFF)--15-ns
Turn-off Fall TimeTf--11-ns
Total Gate ChargeQgVDS = -24V, VGS = -10V, ID = -6A-18.5-nC
Gate-Source ChargeQgs--5.4--
Gate-Drain ChargeQgd--2.8--
Drain-Source VoltageVDSS--30--V
Gate-Source VoltageVGSS-20--V
Junction Temperature RangeTJ--55-175C
Storage Temperature RangeTSTG--55-175C
Source Current-Continuous(Body Diode)ISTc=25C--8-A
Pulsed Drain CurrentIDMTc=25C--32-A
Continuous Drain CurrentIDTc=25C--8-A
Continuous Drain CurrentIDTc=100C--5.6-A
Maximum Power DissipationPDTc=25C-3-W
Maximum Power DissipationPDTc=100C-1.5-W
Thermal Resistance, Junction-to-AmbientRTJAMounted on Large Heat Sink-50-C/W
Single Pulsed-Avalanche EnergyEASL=0.3mH-50-mJ

2411220121_HUAYI-HYG260P03LR1S_C2843505.pdf
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