High Current N Channel Enhancement Mode MOSFET HUAYI HY3010B with 10 Milliohm Typical On Resistance
Key Attributes
Model Number:
HY3010B
Product Custom Attributes
Drain To Source Voltage:
100V
Current - Continuous Drain(Id):
100A
Operating Temperature -:
-
RDS(on):
12mΩ@10V
Gate Threshold Voltage (Vgs(th)):
4V@250uA
Type:
N-Channel
Reverse Transfer Capacitance (Crss@Vds):
260pF@25V
Number:
1 N-channel
Input Capacitance(Ciss):
-
Pd - Power Dissipation:
192W
Gate Charge(Qg):
100nC@10V
Mfr. Part #:
HY3010B
Package:
TO-263-2
Product Description
Product Overview
The HY3010P/B is an N-Channel Enhancement Mode MOSFET designed for power switching applications. It features high current handling capability (100V/100A), low on-resistance (RDS(ON)=10m typ.), 100% avalanche tested, and a reliable, rugged design. Lead-free and green devices are available, compliant with RoHS standards.
Product Attributes
- Brand: HY (Huayi Microelectronics)
- Origin: China
- Certifications: RoHS Compliant, Lead-Free, Green (Halogen-Free)
Technical Specifications
| Parameter | Symbol | Test Conditions | HY3010 Unit | Min | Typ. | Max |
|---|---|---|---|---|---|---|
| Absolute Maximum Ratings | ||||||
| Drain-Source Voltage | VDSS | Tc=25C Unless Otherwise Noted | V | 100 | ||
| Gate-Source Voltage | VGSS | V | 25 | |||
| Maximum Junction Temperature | TJ | C | 175 | |||
| Storage Temperature Range | TSTG | C | -55 | |||
| Source Current-Continuous (Body Diode) | IS | Tc=25C, Mounted on Large Heat Sink | A | 100 | ||
| Pulsed Drain Current | IDM | Tc=25C | A | 380** | ||
| Continuous Drain Current | ID | Tc=25C | A | 100 | ||
| Continuous Drain Current | ID | Tc=100C | A | 74 | ||
| Maximum Power Dissipation | PD | Tc=25C | W | 192 | ||
| Maximum Power Dissipation | PD | Tc=100C | W | 96 | ||
| Thermal Resistance, Junction-to-Case | RJC | C/W | 0.78 | |||
| Thermal Resistance, Junction-to-Ambient | RJA | Surface mounted on FR-4 board. | C/W | 62.5 | ||
| Single Pulsed-Avalanche Energy | EAS | L=0.5mH | mJ | 575 | ||
| Electrical Characteristics (Tc =25C Unless Otherwise Noted) | ||||||
| Drain-Source Breakdown Voltage | BVDSS | VGS=0V,IDS=250A | V | 100 | - | - |
| Drain-to-Source Leakage Current | IDSS | VDS=100V,VGS=0V | A | - | 1 | |
| Drain-to-Source Leakage Current | IDSS | TJ=125C | A | - | 10 | |
| Gate Threshold Voltage | VGS(th) | VDS=VGS, IDS=250A | V | 2 | 3 | 4 |
| Gate-Source Leakage Current | IGSS | VGS=25V,VDS=0V | nA | - | 100 | |
| Drain-Source On-State Resistance | RDS(ON)* | VGS=10V,IDS=50A | m | 10 | 12 | |
| Diode Characteristics | ||||||
| Diode Forward Voltage | VSD* | ISD=50A,VGS=0V | V | 0.8 | 1 | |
| Reverse Recovery Time | trr | ISD=50A,dISD/dt=100A/s | ns | 35 | - | |
| Reverse Recovery Charge | Qrr | nC | 50 | - | ||
| Dynamic Characteristics | ||||||
| Gate Resistance | RG | VGS=0V,VDS=0V,F=1 MHz | 1.3 | - | ||
| Input Capacitance | Ciss | VGS=0V, VDS=25V, Frequency=1.0MHz | pF | 3100 | - | |
| Output Capacitance | Coss | pF | 850 | - | ||
| Reverse Transfer Capacitance | Crss | pF | 260 | - | ||
| Turn-on Delay Time | td(ON) | VDD=50V,RG=6, IDS=50A,VGS=10V | ns | 18 | 38 | |
| Turn-on Rise Time | Tr | ns | 50 | 102 | ||
| Turn-off Delay Time | td(OFF) | ns | 58 | 116 | ||
| Turn-off Fall Time | Tf | ns | 68 | 135 | ||
| Gate Charge Characteristics | ||||||
| Total Gate Charge | Qg | VDS=80V, VGS=10V ID=50A | nC | 76 | 100 | |
| Gate-Source Charge | Qgs | - | 12 | - | ||
| Gate-Drain Charge | Qgd | - | 26 | - | ||
2410122028_HUAYI-HY3010B_C2832951.pdf
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