Switching HUAYI HYG050N08NS1B N Channel MOSFET with 80 Volt Voltage Rating and High Current Capacity
Key Attributes
Model Number:
HYG050N08NS1B
Product Custom Attributes
Drain To Source Voltage:
80V
Current - Continuous Drain(Id):
130A
Operating Temperature -:
-55℃~+175℃@(Tj)
RDS(on):
5mΩ@10V
Gate Threshold Voltage (Vgs(th)):
4V@250uA
Type:
N-Channel
Reverse Transfer Capacitance (Crss@Vds):
25pF@25V
Number:
1 N-channel
Input Capacitance(Ciss):
4.28nF@25V
Pd - Power Dissipation:
187.5W
Gate Charge(Qg):
68nC@10V
Mfr. Part #:
HYG050N08NS1B
Package:
TO-263-2
Product Description
Product Overview
The HYG050N08NS1P/B is an N-Channel Enhancement Mode MOSFET designed for switching applications, power management in inverter systems, and motor control. It features high performance with a low on-resistance of 4 m (typ.) at VGS = 10V, 80V/130A rating, and 100% avalanche tested for reliability and ruggedness. Lead-Free and Green devices are available, complying with RoHS standards.
Product Attributes
- Brand: HYMEXTA
- Origin: China
- Material: Lead-Free and Green Devices Available (RoHS Compliant)
- Certifications: RoHS Compliant, IPC/JEDEC J-STD-020 compliant for MSL classification
Technical Specifications
| Symbol | Parameter | Test Conditions | Unit | Min | Typ. | Max |
|---|---|---|---|---|---|---|
| Absolute Maximum Ratings | ||||||
| VDSS | Drain-Source Voltage | V | 80 | |||
| VGSS | Gate-Source Voltage | V | ±20 | |||
| TJ | Junction Temperature Range | °C | -55 | 175 | ||
| TSTG | Storage Temperature Range | °C | -55 | 175 | ||
| IS | Source Current-Continuous(Body Diode) | TC=25°C, Mounted on Large Heat Sink | A | 130 | ||
| IDM | Pulsed Drain Current * | TC=25°C | A | 450 | ||
| ID | Continuous Drain Current | TC=25°C | A | 130 | ||
| TC=100°C | A | 92 | ||||
| PD | Maximum Power Dissipation | TC=25°C | W | 187.5 | ||
| TC=100°C | W | 93.7 | ||||
| RθJC | Thermal Resistance, Junction-to-Case | °C/W | 0.8 | |||
| RθJA | Thermal Resistance, Junction-to-Ambient ** | Surface mounted on 1in² FR-4 board. | °C/W | 62.5 | ||
| EAS | Single Pulsed-Avalanche Energy *** | L=0.3mH | mJ | 244 | ||
| Electrical Characteristics | ||||||
| BVDSS | Drain-Source Breakdown Voltage | VGS=0V, IDS= 250μA | V | 80 | - | - |
| IDSS | Drain-to-Source Leakage Current | VDS= 80V,VGS=0V | μA | 1 | ||
| TJ=125°C | μA | 50 | ||||
| VGS(th) | Gate Threshold Voltage | VDS=VGS, IDS= 250μA | V | 2 | 3 | 4 |
| IGSS | Gate-Source Leakage Current | VGS=±20V,VDS=0V | nA | ±100 | ||
| RDS(ON) | Drain-Source On-State Resistance | VGS= 10V,IDS= 50A | mΩ | 4.0 | 5.0 | |
| VSD | Diode Forward Voltage | ISD=50A,VGS=0V | V | 0.9 | 1.2 | |
| trr | Reverse Recovery Time | ISD=50A,dISD/dt=100A/μs | ns | 52 | - | |
| Qrr | Reverse Recovery Charge | nC | 70 | - | ||
| RG | Gate Resistance | VGS=0V,VDS=0V,F=1MHz | Ω | 2.6 | - | |
| Ciss | Input Capacitance | VGS=0V, VDS= 25V, Frequency=1.0MHz | pF | 4280 | - | |
| Coss | Output Capacitance | pF | 1770 | - | ||
| Crss | Reverse Transfer Capacitance | pF | 25 | - | ||
| td(ON) | Turn-on Delay Time | VDD= 40V,RG=4Ω, IDS= 50A,VGS= 10V | ns | 17 | - | |
| Tr | Turn-on Rise Time | ns | 87 | - | ||
| td(OFF) | Turn-off Delay Time | ns | 47 | - | ||
| Tf | Turn-off Fall Time | ns | 101 | - | ||
| Qg | Total Gate Charge | VDS = 64V, VGS= 10V, IDs= 50A | nC | 68 | - | |
| Qgs | Gate-Source Charge | nC | 22 | - | ||
| Qgd | Gate-Drain Charge | nC | 17 | - | ||
2410121248_HUAYI-HYG050N08NS1B_C2763407.pdf
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