Infineon IKB06N60T TRENCHSTOP Technology IGBT with Tight Parameter Distribution and Low EMI Emission
Key Attributes
Model Number:
IKB06N60T
Product Custom Attributes
Pd - Power Dissipation:
88W
Td(off):
130ns
Td(on):
9ns
Collector-Emitter Breakdown Voltage (Vces):
600V
Reverse Transfer Capacitance (Cres):
11pF
IGBT Type:
FS (Field Stop)
Gate-Emitter Threshold Voltage (Vge(th)@Ic):
4.1V@0.18mA
Gate Charge(Qg):
42nC@15V
Operating Temperature:
-40℃~+175℃
Reverse Recovery Time(trr):
123ns
Switching Energy(Eoff):
110uJ
Turn-On Energy (Eon):
90uJ
Input Capacitance(Cies):
368pF
Pulsed Current- Forward(Ifm):
18A
Output Capacitance(Coes):
28pF
Mfr. Part #:
IKB06N60T
Package:
TO-263-3
Product Description
Product Overview
The IKB06N60T is a Low Loss DuoPack IGBT featuring TRENCHSTOP and Fieldstop technology with a soft, fast recovery anti-parallel Emitter Controlled HE diode. It offers very low VCE(sat) of 1.5V (typ.), a maximum junction temperature of 175C, and a short circuit withstand time of 5s. Designed for frequency inverters in applications like washing machines, fans, pumps, and vacuum cleaners, this IGBT provides very tight parameter distribution, high ruggedness, temperature-stable behavior, and very high switching speed with low EMI. It is qualified according to JEDEC for target applications and is Pb-free and RoHS compliant.
Product Attributes
- Brand: Infineon
- Series: TRENCHSTOP
- Technology: TRENCHSTOP and Fieldstop
- Diode Type: Emitter Controlled HE
- Certifications: JEDEC, RoHS compliant
- Lead Plating: Pb-free
Technical Specifications
| Type | VCE | IC; Tc=100C | VCE(sat),Tj=25C | Tj,max | Marking | Package |
| IKB06N60T | 600V | 6A | 1.5V | 175C | K06T60 | PG-TO263-3 |
| Parameter | Symbol | Value | Unit | ||
| Collector-emitter voltage, Tj 25C | VCE | 600 | V | ||
| DC collector current, limited by Tjmax, TC = 25C | IC | 12 | A | ||
| DC collector current, limited by Tjmax, TC = 100C | IC | 6 | A | ||
| Pulsed collector current, tp limited by Tjmax | ICpuls | 18 | A | ||
| Diode forward current, limited by Tjmax, TC = 25C | IF | 12 | A | ||
| Diode forward current, limited by Tjmax, TC = 100C | IF | 6 | A | ||
| Diode pulsed current, tp limited by Tjmax | IFpuls | 18 | A | ||
| Gate-emitter voltage | VGE | 20 | V | ||
| Short circuit withstand time | tSC | 5 | s | ||
| Power dissipation, TC = 25C | Ptot | 88 | W | ||
| Operating junction temperature | Tj | -40...+175 | C | ||
| Storage temperature | Tstg | -55...+150 | C | ||
| Soldering temperature (reflow soldering, MSL1) | 260 | C | |||
| IGBT thermal resistance, junction case | RthJC | 1.7 | K/W | ||
| Diode thermal resistance, junction case | RthJCD | 2.6 | K/W | ||
| Thermal resistance, junction ambient | RthJA | 62 | K/W | ||
| Thermal resistance, junction ambient Footprint 6cm Cu | RthJA | 40 | K/W | ||
| Collector-emitter breakdown voltage, VGE=0V, IC=0.25mA | V(BR)CES | 600 | V | ||
| Collector-emitter saturation voltage, VGE = 15V, IC=6A, Tj=25C | VCE(sat) | 1.5 | V | ||
| Collector-emitter saturation voltage, VGE = 15V, IC=6A, Tj=175C | VCE(sat) | 1.8 | V | ||
| Diode forward voltage, VGE=0V, IF=6A, Tj=25C | VF | 1.6 | V | ||
| Diode forward voltage, VGE=0V, IF=6A, Tj=175C | VF | 1.6 | V | ||
| Gate-emitter threshold voltage, IC=0.18mA, VCE=VGE | VGE(th) | 4.1 | 4.6 | 5.7 | V |
| Zero gate voltage collector current, VCE=600V, VGE=0V, Tj=25C | ICEs | 40 | A | ||
| Zero gate voltage collector current, VCE=600V, VGE=0V, Tj=175C | ICEs | 700 | A | ||
| Gate-emitter leakage current, VCE=0V, VGE=20V | IGEs | 100 | nA | ||
| Transconductance, VCE=20V, IC=6A | gfs | 3.6 | S | ||
| Input capacitance, VCE=25V, VGE=0V, f=1MHz | Ciss | 368 | pF | ||
| Output capacitance, VCE=25V, VGE=0V, f=1MHz | Coss | 28 | pF | ||
| Reverse transfer capacitance, VCE=25V, VGE=0V, f=1MHz | Crss | 11 | pF | ||
| Gate charge, VCC=480V, IC=6A, VGE=15V | Qg | 42 | nC | ||
| Internal emitter inductance measured 5mm (0.197 in.) from case | LE | 7 | nH | ||
| Short circuit collector current, VGE=15V,tSC5s, VCC = 400V, Tj = 25C | IC(SC) | 55 | A | ||
| Turn-on delay time, Tj=25C, VCC=400V,IC=6A, VGE=0/15V,rG=23, L=60nH,C=40pF | td(on) | 9 | ns | ||
| Rise time, Tj=25C, VCC=400V,IC=6A, VGE=0/15V,rG=23, L=60nH,C=40pF | tr | 6 | ns | ||
| Turn-off delay time, Tj=25C, VCC=400V,IC=6A, VGE=0/15V,rG=23, L=60nH,C=40pF | td(off) | 130 | ns | ||
| Fall time, Tj=25C, VCC=400V,IC=6A, VGE=0/15V,rG=23, L=60nH,C=40pF | tf | 58 | ns | ||
| Turn-on energy, Tj=25C, VCC=400V,IC=6A, VGE=0/15V,rG=23, L=60nH,C=40pF | Eon | 0.09 | mJ | ||
| Turn-off energy, Tj=25C, VCC=400V,IC=6A, VGE=0/15V,rG=23, L=60nH,C=40pF | Eoff | 0.11 | mJ | ||
| Total switching energy, Tj=25C, VCC=400V,IC=6A, VGE=0/15V,rG=23, L=60nH,C=40pF | Ets | 0.2 | mJ | ||
| Diode reverse recovery time, Tj=25C, VR=400V, IF=6A, diF/dt=550A/s | trr | 123 | ns | ||
| Diode reverse recovery charge, Tj=25C, VR=400V, IF=6A, diF/dt=550A/s | Qrr | 190 | nC | ||
| Diode peak reverse recovery current, Tj=25C, VR=400V, IF=6A, diF/dt=550A/s | Irr | 5.3 | A | ||
| Diode peak rate of fall of reverse recovery current during tb, Tj=25C, VR=400V, IF=6A, diF/dt=550A/s | dirr/dt | 450 | A/s | ||
| Turn-on delay time, Tj=175C, VCC=400V,IC=6A, VGE=0/15V,rG=23, L=60nH,C=40pF | td(on) | 9 | ns | ||
| Rise time, Tj=175C, VCC=400V,IC=6A, VGE=0/15V,rG=23, L=60nH,C=40pF | tr | 8 | ns | ||
| Turn-off delay time, Tj=175C, VCC=400V,IC=6A, VGE=0/15V,rG=23, L=60nH,C=40pF | td(off) | 165 | ns | ||
| Fall time, Tj=175C, VCC=400V,IC=6A, VGE=0/15V,rG=23, L=60nH,C=40pF | tf | 84 | ns | ||
| Turn-on energy, Tj=175C, VCC=400V,IC=6A, VGE=0/15V,rG=23, L=60nH,C=40pF | Eon | 0.14 | mJ | ||
| Turn-off energy, Tj=175C, VCC=400V,IC=6A, VGE=0/15V,rG=23, L=60nH,C=40pF | Eoff | 0.18 | mJ | ||
| Total switching energy, Tj=175C, VCC=400V,IC=6A, VGE=0/15V,rG=23, L=60nH,C=40pF | Ets | 0.335 | mJ | ||
| Diode reverse recovery time, Tj=175C, VR=400V, IF=6A, diF/dt=550A/s | trr | 180 | ns | ||
| Diode reverse recovery charge, Tj=175C, VR=400V, IF=6A, diF/dt=550A/s | Qrr | 500 | nC | ||
| Diode peak reverse recovery current, Tj=175C, VR=400V, IF=6A, diF/dt=550A/s | Irr | 7.6 | A | ||
| Diode peak rate of fall of reverse recovery current during tb, Tj=175C, VR=400V, IF=6A, diF/dt=550A/s | dirr/dt | 285 | A/s |
2410121815_Infineon-IKB06N60T_C536142.pdf
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